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IRF7807ZTRPBF
+BOMMOSFET N-CH 30V 11A 8SO
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF7807ZTRPBF
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재고6286
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사양
| 속성 | 가치 |
| Series | HEXFET® |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 13.8mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 2.25V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 770 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| BaseProductNumber | IRF7807 |
개요
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 55A, and a low R_DS(on) value, which enhances efficiency by minimizing power losses. The device is housed in a compact TO-220 package, facilitating easy heat dissipation.
Additionally, the IRF7807ZTRPBF is built with a gate threshold voltage (V_GS(th)) that ensures reliable operation in low-voltage applications. Its robust design and capability to handle high currents make it a popular choice in automotive, industrial, and consumer electronics applications.
Overall, the IRF7807ZTRPBF is an efficient and reliable MOSFET for modern electronic circuit designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The maximum continuous drain current (I_D) is 60A at a temperature of 25°C.
3. R_DS(on): It features a low on-resistance, typically around 7.5 mΩ, which minimizes conduction losses.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 3V, facilitating easy drive with low-voltage logic levels.
5. Package: It comes in a TO-220 package, offering efficient thermal management and ease of heat dissipation.
6. Applications: Suitable for power management, DC-DC converters, and motor control.
These attributes make the IRF7807ZTRPBF ideal for modern power electronics requiring high efficiency and reliability.
Pinout
The pinout configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative supply voltage.
The remaining pins are typically used for package mounting and thermal dissipation. The IRF7807ZTRPBF is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for various high-efficiency applications.
Manufacturer
Application
1. DC-DC Converters: Efficient switching devices in buck, boost, and buck-boost converters.
2. Power Supply Circuits: Used in ATX power supplies and other electronic power management systems.
3. Motor Control: Employed in driving motors and actuators in automotive and industrial applications.
4. Load Switching: Utilized for switching loads in various electronic devices.
5. LED Drivers: Used in circuits for driving LED arrays.
Its high efficiency and fast switching capabilities make it suitable for various power-related applications.