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IRF7821TRPBF
+BOMMOSFET N-CH 30V 13.6A 8SO
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF7821TRPBF
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데이터시트 IRF7821TRPBF DataSheet
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패키지 SOIC-8
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 13.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9.1mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1010 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 155°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
개요
Description
Key specifications include a drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 46A, making it suitable for medium to high-power applications. It features a low on-state resistance (R_DS(on)), which minimizes power loss and heat generation during operation, enhancing efficiency.
The IRF7821TRPBF comes in a surface-mountable, compact D-Pak package, which is ideal for space-constrained applications. It also features fast switching capabilities and robust performance under different operating conditions. The use of Pb-free materials aligns with environmental regulations, making it a greener option for eco-conscious designs.
In summary, the IRF7821TRPBF is a versatile, efficient, and reliable MOSFET suitable for a wide range of power applications.
Equivalent
1. IRF8721 - by International Rectifier/Infineon, similar voltage and current ratings.
2. FDS6679 - by Fairchild/ON Semiconductor, comparable performance.
3. SI7336ADP - by Vishay, similar specifications.
4. NTMFS4935N - by ON Semiconductor, suitable replacement with close characteristics.
Ensure to check the datasheets for precise specifications and compatibility before substituting.
Features
1. N-Channel MOSFET: Offers quick switching and low on-state resistance for efficient operation.
2. Voltage Rating: 30V drain-to-source voltage (V_DS) suitable for low to medium power applications.
3. Current Capacity: Supports continuous drain current of up to 11A at 25°C.
4. Low On-Resistance: With an R_DS(on) of less than 8mΩ, it minimizes conduction losses.
5. Fast Switching: Delivers rapid switching speeds, enhancing performance in high-frequency applications.
6. Thermal Efficiency: Comes in a compact and thermally efficient SO-8 package.
7. Lead-Free: Complies with RoHS standards, ensuring environmentally friendly usage.
8. Applications: Ideal for applications in DC-DC converters, power management, and load switches.
These features make the IRF7821TRPBF suitable for applications requiring efficient power management and compact design.
Pinout
The pin functions for the IRF7821TRPBF are as follows:
1. Pin 1, 2, 3: Source (S) - These pins are connected internally and serve as the source terminal for the MOSFET.
2. Pin 4: Gate (G) - This pin is used to drive the gate of the MOSFET, controlling its on and off states.
3. Pin 5, 6, 7, 8: Drain (D) - These pins are also connected internally and serve as the drain terminal for the MOSFET.
The IRF7821TRPBF is known for its low on-state resistance and is commonly used in applications requiring efficient load switching and power management.
Manufacturer
Infineon was originally part of the German engineering conglomerate Siemens AG, but it became an independent entity in 1999. Since then, it has grown to become one of the leading semiconductor companies globally. Infineon is recognized for its innovation and expertise in the semiconductor industry, particularly in the areas of energy efficiency, mobility, and security.
The IRF7821TRPBF itself is a power MOSFET, which is used to switch and amplify electronic signals in various applications, particularly those requiring efficient power management and control.