IRF7855TRPBF

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IRF7855TRPBF

+BOM

MOSFET N-CH 60V 12A 8SO

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 12A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9.4mOhm @ 12A, 10V
Vgs(th)(Max)@Id 4.9V @ 100µA
GateCharge(Qg)(Max)@Vgs 39 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1560 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

개요

Description

The IRF7855TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. Manufactured by Infineon Technologies, this component is part of their HEXFET® line, which is known for delivering high performance and reliability. The IRF7855TRPBF features a low on-resistance, allowing for minimized power loss and improved efficiency in electronic circuits.
Key specifications include a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 8.7A, making it suitable for moderate power applications. The MOSFET is packaged in a standard SO-8 surface-mount package, promoting ease of use in PCB designs with limited space. Additionally, it boasts fast switching capabilities, contributing to reduced switching losses in power conversion applications.
Common applications for the IRF7855TRPBF include DC-DC converters, motor control circuits, and load switches. Its robust construction and efficient performance make it a preferred choice for designers seeking reliable power management solutions.

Equivalent

The IRF7855TRPBF is a N-channel MOSFET commonly used in power management applications. Equivalent products include:
1. FDS6679AS - by ON Semiconductor
2. AON7410 - by Alpha & Omega Semiconductor
3. BSC067N06LS3 G - by Infineon Technologies
4. Si4874DY - by Vishay
These components may have similar electrical characteristics but always verify specifications and pin configurations before substituting.

Features

The IRF7855TRPBF is a dual N-channel MOSFET designed for various applications requiring efficient power management. Key features include:
1. Low On-Resistance: The MOSFET offers very low on-resistance, ensuring minimal power loss and improved efficiency in applications.
2. Dual Configuration: As a dual-channel device, it allows for compact designs by integrating two MOSFETs in a single package.
3. Fast Switching: It provides rapid switching speeds, which is ideal for high-frequency applications.
4. Surface Mount Package: The device comes in a standard SO-8 package, facilitating easy integration into printed circuit boards (PCBs).
5. Thermal Performance: It is designed to handle significant power dissipation, making it suitable for demanding thermal environments.
6. Wide Range of Applications: The IRF7855TRPBF is applicable in battery management, DC-DC converters, and load switch applications.
These features make the IRF7855TRPBF a versatile and efficient choice for modern electronic devices requiring reliable power management solutions.

Pinout

The IRF7855TRPBF is a dual N-channel MOSFET, packaged in an SO-8 configuration. It has a total of 8 pins. The primary function of this MOSFET is to act as a switch or to amplify electronic signals in power management applications, typically within computer and communication systems.
Here's a concise pin description:
1. Pins 1, 2, 3: Source 1 (S1) - These pins are connected to the source terminal of the first MOSFET.
2. Pin 4: Gate 1 (G1) - This pin controls the gate of the first MOSFET.
3. Pin 5: Gate 2 (G2) - This pin controls the gate of the second MOSFET.
4. Pins 6, 7, 8: Source 2 (S2) - These pins are connected to the source terminal of the second MOSFET.
The drain terminals for both MOSFETs are internally connected to the substrate and are generally not pinned out separately, as they are connected to the package's thermal pad for heat dissipation. This configuration allows the IRF7855TRPBF to be used effectively in applications requiring efficient, high-speed switching with low on-resistance.

Manufacturer

The IRF7855TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that provides a wide range of semiconductor solutions, including microcontrollers, sensors, and power semiconductors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on applications like energy efficiency, mobility, and security. Infineon is recognized for its expertise in power electronics and plays a significant role in advancing technologies that support smart, efficient, and sustainable systems.

Application

The IRF7855TRPBF is a N-channel MOSFET commonly used in various power management applications. Key application areas include:
1. DC-DC Converters: Efficiently converting voltage levels in power supply circuits.
2. Motor Drives: Controlling DC motors and servos in automotive and industrial applications.
3. Battery Management: Used in battery protection and charging systems.
4. Switching Regulators: Ideal for use in high-frequency switching regulators due to low on-resistance and fast switching capabilities.
5. Load Switches: Employed in electronic load switch applications for various consumer electronics.
6. Inverters: Part of the inverter circuitry in solar power systems and uninterruptible power supplies (UPS).
Its robust design and high efficiency make it suitable for high-current, high-frequency applications.

Package

The IRF7855TRPBF is a MOSFET that comes in an SO-8 package. The "TRPBF" suffix indicates it is lead-free and comes in tape and reel packaging for automated assembly processes.

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