IRF840

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IRF840

+BOM

MOSFET N-CH 500V 8A TO220AB

  • 제조업체ST마이크로일렉트로닉스(주)

  • 제조업체 부품 #IRF840

  • 패키지 TO-220-3

  • 재고2556

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사양

속성 가치
Package Tube
Series PowerMESH™ II
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 850mOhm @ 3.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 39 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 832 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

개요

Equivalent

Equivalent products to the IRF840 (N-channel MOSFET, 500V, 8A, 0.85Ω) include:
- IRF740 (400V, 10A, 0.55Ω)
- IRF830 (500V, 4.5A, 1.5Ω)
- STP8NK50Z (500V, 7.5A, 0.8Ω)
- FQP8N50C (500V, 8A, 0.85Ω)
- 2SK2837 (500V, 8A, 0.85Ω)
Check datasheets for exact compatibility in your circuit.

Features

The IRF840 is an N-channel power MOSFET with the following key features:
- Voltage Rating: 500V drain-to-source (VDSS)
- Current Rating: 8A continuous drain current (ID)
- On-Resistance: 0.85Ω (RDS(on)) at 10V gate drive
- Fast Switching: Low gate charge (63nC) and fast switching speed
- Power Handling: Up to 125W power dissipation
- Gate Threshold: 4V typical (VGS(th))
- Package: TO-220 (through-hole) for easy mounting
Commonly used in power supplies, inverters, and motor control due to its high voltage and efficient switching performance.

Package

The IRF840 is a power MOSFET typically available in a TO-220 package. This through-hole package is widely used for its ease of mounting, good thermal performance, and compatibility with heat sinks. It has three leads: gate (G), drain (D), and source (S). The TO-220 package is suitable for medium-power applications.

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