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IRF9610PBF
+BOMMOSFET P-CH 200V 1.8A TO220AB
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제조업체실리콘 닉스
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제조업체 부품 #IRF9610PBF
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데이터시트 IRF9610PBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 1.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3Ohm @ 900mA, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 170 pF @ 25 V |
| PowerDissipation(Max) | 20W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The IRF9610PBF is a P-channel MOSFET manufactured by Infineon Technologies, previously under International Rectifier. It is designed for switching and amplification applications. This MOSFET operates with a maximum drain-source voltage of -200V and can handle a continuous drain current of -3.3A at 25°C. The IRF9610PBF features a low on-resistance of 0.6 ohms, enhancing efficiency by minimizing power loss during operation.
It's housed in a TO-220 package, which provides good thermal performance, making it suitable for applications requiring moderate power dissipation. The device is often used in audio amplifiers, DC-DC converters, and power management circuits. Additionally, it is RoHS compliant, meaning it adheres to environmental regulations by limiting hazardous substances.
Key characteristics include a gate threshold voltage range of -2 to -4V and a maximum power dissipation of 74W. The IRF9610PBF can be effectively used in both consumer electronics and industrial applications where reliability and efficiency are crucial.
It's housed in a TO-220 package, which provides good thermal performance, making it suitable for applications requiring moderate power dissipation. The device is often used in audio amplifiers, DC-DC converters, and power management circuits. Additionally, it is RoHS compliant, meaning it adheres to environmental regulations by limiting hazardous substances.
Key characteristics include a gate threshold voltage range of -2 to -4V and a maximum power dissipation of 74W. The IRF9610PBF can be effectively used in both consumer electronics and industrial applications where reliability and efficiency are crucial.
Equivalent
The IRF9610PBF is a P-channel MOSFET. Equivalent products include:
1. FQP27P06 from ON Semiconductor
2. STP55PF06 from STMicroelectronics
3. FDP7030BL from Fairchild Semiconductor
4. IPP60P03P4L-04 from Infineon Technologies
These alternatives offer similar voltage and current ratings and can be used in similar applications. Always check the datasheets for exact specifications and compatibility before substituting.
1. FQP27P06 from ON Semiconductor
2. STP55PF06 from STMicroelectronics
3. FDP7030BL from Fairchild Semiconductor
4. IPP60P03P4L-04 from Infineon Technologies
These alternatives offer similar voltage and current ratings and can be used in similar applications. Always check the datasheets for exact specifications and compatibility before substituting.
Features
The IRF9610PBF is a P-channel MOSFET featuring a variety of characteristics suitable for efficient power management applications. It is designed with a continuous drain current of approximately -3.0A and a drain-source voltage (V_ds) of -200V. The MOSFET exhibits a low on-resistance (R_ds(on)) of around 0.6 ohms, which enhances its efficiency by minimizing power loss during operation. The IRF9610PBF has a gate threshold voltage (V_gs(th)) range of -2.0V to -4.0V, enabling reliable switching.
Additionally, it supports a maximum power dissipation of about 74W, making it suitable for moderate power applications. The device is designed to operate within a temperature range of -55°C to 175°C, ensuring reliable performance under varying thermal conditions. The IRF9610PBF also features a fast switching speed, which is beneficial for applications requiring rapid on/off cycles. The package for this MOSFET is typically a TO-220, which offers effective heat dissipation and ease of mounting in circuit designs. It is used in applications such as DC-DC converters, power management systems, and other electronic devices.
Additionally, it supports a maximum power dissipation of about 74W, making it suitable for moderate power applications. The device is designed to operate within a temperature range of -55°C to 175°C, ensuring reliable performance under varying thermal conditions. The IRF9610PBF also features a fast switching speed, which is beneficial for applications requiring rapid on/off cycles. The package for this MOSFET is typically a TO-220, which offers effective heat dissipation and ease of mounting in circuit designs. It is used in applications such as DC-DC converters, power management systems, and other electronic devices.
Pinout
The IRF9610PBF is a P-channel MOSFET with the following pin configuration and functions:
- Pin 1 - Gate (G): This pin controls the MOSFET's conductivity. Applying the appropriate voltage to the gate will switch the MOSFET on or off.
- Pin 2 - Drain (D): This is the output pin where the main current flows from the drain to the source when the MOSFET is on.
- Pin 3 - Source (S): This is the input pin where the current enters the MOSFET when it is switched on.
The IRF9610PBF is typically used in switching applications. It features a high voltage capability and is often utilized in applications such as audio amplifiers, power management, and DC-DC converters.
- Pin 1 - Gate (G): This pin controls the MOSFET's conductivity. Applying the appropriate voltage to the gate will switch the MOSFET on or off.
- Pin 2 - Drain (D): This is the output pin where the main current flows from the drain to the source when the MOSFET is on.
- Pin 3 - Source (S): This is the input pin where the current enters the MOSFET when it is switched on.
The IRF9610PBF is typically used in switching applications. It features a high voltage capability and is often utilized in applications such as audio amplifiers, power management, and DC-DC converters.
Manufacturer
The IRF9610PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of electronic components and systems. The company specializes in automotive, industrial, and multimarket sectors, providing solutions for power management, digital security, and communications. Infineon is recognized for its innovation in power semiconductors, microcontrollers, and sensors, and it plays a significant role in the advancement of technologies such as electric vehicles and renewable energy systems.
Application
The IRF9610PBF is a P-channel MOSFET used in various applications due to its efficient switching and low on-state resistance. Key application areas include:
1. Power Management: Used in DC-DC converters and power supply circuits for efficient voltage regulation.
2. Motor Control: Employed in H-bridge configurations for controlling motors and actuators.
3. Audio Amplifiers: Utilized in Class D amplifiers for efficient audio signal amplification.
4. Switching Circuits: Ideal for high-speed switching applications in automotive and industrial systems.
5. Load Switching: Used for controlling and protecting electronic loads in consumer electronics.
Its robust design and thermal performance make it suitable for various demanding applications.
1. Power Management: Used in DC-DC converters and power supply circuits for efficient voltage regulation.
2. Motor Control: Employed in H-bridge configurations for controlling motors and actuators.
3. Audio Amplifiers: Utilized in Class D amplifiers for efficient audio signal amplification.
4. Switching Circuits: Ideal for high-speed switching applications in automotive and industrial systems.
5. Load Switching: Used for controlling and protecting electronic loads in consumer electronics.
Its robust design and thermal performance make it suitable for various demanding applications.
Package
The IRF9610PBF is a P-channel MOSFET available in a TO-220 package type.
