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IRFB3306GPBF
+BOMMOSFET N-CH 60V 120A TO220AB
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFB3306GPBF
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데이터시트 IRFB3306GPBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4520 pF @ 50 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
개요
Description
The IRFB3306GPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Manufactured by Infineon Technologies, this N-channel MOSFET is part of the HEXFET® technology line, which is known for low on-state resistance and robust performance. The device is commonly used in applications such as motor drives, power supplies, and DC-DC converters.
Key specifications include a maximum drain-to-source voltage (V_ds) of 60V and a continuous drain current (I_d) of up to 120A, when mounted on a suitable heatsink. The IRFB3306GPBF also features a low gate charge, which allows for fast switching and improved efficiency. It comes in a TO-220 package, making it suitable for through-hole mounting on printed circuit boards.
This MOSFET is favored in applications where power efficiency, thermal performance, and reliability are crucial. It's often used in both industrial and consumer electronics due to its ability to handle high currents and voltages efficiently while maintaining low power loss.
Key specifications include a maximum drain-to-source voltage (V_ds) of 60V and a continuous drain current (I_d) of up to 120A, when mounted on a suitable heatsink. The IRFB3306GPBF also features a low gate charge, which allows for fast switching and improved efficiency. It comes in a TO-220 package, making it suitable for through-hole mounting on printed circuit boards.
This MOSFET is favored in applications where power efficiency, thermal performance, and reliability are crucial. It's often used in both industrial and consumer electronics due to its ability to handle high currents and voltages efficiently while maintaining low power loss.
Equivalent
The IRFB3306GPBF is a N-channel MOSFET commonly used in power applications. Equivalent products include:
1. STMicroelectronics' STP80NF55
2. ON Semiconductor's FDP8440
3. Infineon's IPB036N12N3 G
4. Vishay's SiHF530
These equivalents may differ slightly in specifications, so it's important to verify key parameters like voltage, current ratings, and Rds(on) to ensure compatibility with your application.
1. STMicroelectronics' STP80NF55
2. ON Semiconductor's FDP8440
3. Infineon's IPB036N12N3 G
4. Vishay's SiHF530
These equivalents may differ slightly in specifications, so it's important to verify key parameters like voltage, current ratings, and Rds(on) to ensure compatibility with your application.
Features
The IRFB3306GPBF is a power MOSFET designed for high-efficiency and high-speed switching applications. Key features include:
1. N-Channel MOSFET: It features an N-channel enhanced mode, which is commonly used in power switching applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance, typically around 3.2 milliohms, minimizing power loss and improving efficiency.
3. High Current Capacity: It can handle continuous currents up to 160A, making it suitable for high-power applications.
4. High Voltage Rating: The device is rated for a maximum drain-source voltage of 60V, allowing it to operate in relatively high-voltage environments.
5. Fast Switching: Designed for fast switching speeds, it improves performance in switching circuits.
6. TO-220 Package: The MOSFET comes in a TO-220 package, which provides good thermal performance and is easy to mount on PCBs.
7. Lead-Free and RoHS Compliant: The component is environmentally friendly and compliant with global standards for hazardous substances.
These features make the IRFB3306GPBF suitable for applications like motor drives, power supplies, and DC-DC converters.
1. N-Channel MOSFET: It features an N-channel enhanced mode, which is commonly used in power switching applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance, typically around 3.2 milliohms, minimizing power loss and improving efficiency.
3. High Current Capacity: It can handle continuous currents up to 160A, making it suitable for high-power applications.
4. High Voltage Rating: The device is rated for a maximum drain-source voltage of 60V, allowing it to operate in relatively high-voltage environments.
5. Fast Switching: Designed for fast switching speeds, it improves performance in switching circuits.
6. TO-220 Package: The MOSFET comes in a TO-220 package, which provides good thermal performance and is easy to mount on PCBs.
7. Lead-Free and RoHS Compliant: The component is environmentally friendly and compliant with global standards for hazardous substances.
These features make the IRFB3306GPBF suitable for applications like motor drives, power supplies, and DC-DC converters.
Pinout
The IRFB3306GPBF is a N-channel power MOSFET. It typically comes in a TO-220 package, which usually has three pins. The pin configuration and functions for the IRFB3306GPBF are as follows:
1. Gate (G): This is the pin used to control the MOSFET, turning it on or off by applying the appropriate voltage to it.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the "on" state. It is connected to the load.
3. Source (S): This is the pin through which current enters the MOSFET. It is typically connected to ground in a common-source configuration.
These pins enable the IRFB3306GPBF to manage high current and voltage levels, making it suitable for applications in power management, motor control, and other high-power switching applications.
1. Gate (G): This is the pin used to control the MOSFET, turning it on or off by applying the appropriate voltage to it.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the "on" state. It is connected to the load.
3. Source (S): This is the pin through which current enters the MOSFET. It is typically connected to ground in a common-source configuration.
These pins enable the IRFB3306GPBF to manage high current and voltage levels, making it suitable for applications in power management, motor control, and other high-power switching applications.
Manufacturer
The IRFB3306GPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that produces a wide range of semiconductor solutions including microcontrollers, automotive and power management ICs, as well as security chips. The company is a global leader in the semiconductor industry, known for its innovation and focus on energy efficiency, mobility, and security applications.
Application
The IRFB3306GPBF is a power MOSFET commonly used in applications requiring high efficiency and reliability. Key application areas include:
1. Power Supplies: Used in DC-DC converters and switch-mode power supplies for efficient power conversion.
2. Motor Control: Suitable for driving motors in automotive and industrial applications due to its low on-state resistance.
3. Inverters: Utilized in inverter circuits for renewable energy systems like solar and wind power.
4. Battery Management: Employed in battery charging and protection circuits.
5. Uninterruptible Power Supplies (UPS): Plays a role in ensuring reliable power backup by efficiently switching loads.
These applications benefit from the MOSFET's fast switching speeds and thermal performance.
1. Power Supplies: Used in DC-DC converters and switch-mode power supplies for efficient power conversion.
2. Motor Control: Suitable for driving motors in automotive and industrial applications due to its low on-state resistance.
3. Inverters: Utilized in inverter circuits for renewable energy systems like solar and wind power.
4. Battery Management: Employed in battery charging and protection circuits.
5. Uninterruptible Power Supplies (UPS): Plays a role in ensuring reliable power backup by efficiently switching loads.
These applications benefit from the MOSFET's fast switching speeds and thermal performance.
Package
The IRFB3306GPBF is packaged in a TO-220 type, which is a standard through-hole package commonly used for power transistors and similar components.
