IRFB5620PBF

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IRFB5620PBF

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IRFB5620 - 12V-300V N-CHANNEL PO

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사양

속성 가치
Package / Case Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 25A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 72.5mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 38 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1710 pF @ 50 V
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

개요

Description

The IRFB5620PBF is an N-channel MOSFET designed by International Rectifier, now part of Infineon Technologies. It is commonly used for switching applications and power management due to its high efficiency and reliability. This MOSFET features a voltage rating of 200V and a current rating of 68A, making it suitable for medium to high-power applications. It is designed with advanced HEXFET technology, which provides low on-resistance (R_DS(on)) and fast switching speeds, helping to reduce power losses and improve overall system efficiency.
The device comes in a TO-220AB package, which is widely used for its ability to handle significant power levels while maintaining a compact form factor. The IRFB5620PBF is also lead-free and RoHS compliant, aligning with environmental regulations. Typical applications include motor drives, power supply units, DC-DC converters, and various automotive and industrial systems. Its robustness and performance make it a popular choice among engineers for demanding electrical and electronic applications.

Equivalent

The IRFB5620PBF is a N-channel MOSFET commonly used for power applications. Equivalent products include:
1. STP55NF06 by STMicroelectronics
2. FQA55N10 by ON Semiconductor
3. NTP65N06R by ON Semiconductor
4. IPP60R190C6 by Infineon
These equivalents should be verified for compatibility based on specific requirements such as package type, voltage, and current ratings. Always consult the datasheets for detailed specifications.

Features

The IRFB5620PBF is a power MOSFET from Infineon Technologies, designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 68A.
2. Low On-Resistance: It offers a low R_DS(on) of around 0.048 ohms, which minimizes power losses and improves efficiency.
3. Fast Switching: The MOSFET supports fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Efficiency: It features a low thermal resistance package, allowing for effective heat dissipation.
5. Lead-Free: The IRFB5620PBF is RoHS-compliant and lead-free, making it suitable for environmentally friendly designs.
6. Package Type: It is available in a TO-220 package, which is commonly used for power devices due to its robustness.
These features make the IRFB5620PBF suitable for applications such as power supplies, motor drives, and DC-DC converters.

Pinout

The IRFB5620PBF is a power MOSFET. Specifically, it is an N-channel MOSFET used for switching applications. This device typically comes in a TO-220 package, which is a common type of package for power semiconductors. The TO-220 package has three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is on or off, enabling or disabling the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the "on" state. It's connected to the load in most applications.
3. Source (S): The source is the terminal connected to the ground or the negative side of the power supply in an N-channel MOSFET configuration.
The IRFB5620PBF is typically used for high-speed switching applications, due to its fast switching capabilities, low on-resistance, and high current handling capacity. It is suitable for applications in automotive, industrial, and consumer electronics.

Manufacturer

The IRFB5620PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of semiconductor solutions, including microcontrollers, sensors, and power management devices. It serves various industries such as automotive, industrial, and consumer electronics by providing components that enhance energy efficiency, connectivity, and security.

Application

The IRFB5620PBF is a power MOSFET commonly used in applications requiring efficient power switching and conversion. Key application areas include:
1. Switch Mode Power Supplies (SMPS): Utilized in both AC-DC and DC-DC converters for efficiency.
2. Motor Drives: Effective in controlling motors in industrial and consumer electronics.
3. Solar Inverters: Converts DC generated by solar panels to AC.
4. Uninterruptible Power Supplies (UPS): Ensures continuous power delivery.
5. Electric Vehicles: Used in power management systems.
6. Load Switches: Efficiently manages power distribution in circuits.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.

Package

The IRFB5620PBF is a TO-220 package type. The TO-220 is a standard semiconductor package used for high-power, medium current, and voltage handling applications.

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