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IRFB5620PBF
+BOMIRFB5620 - 12V-300V N-CHANNEL PO
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제조업체 부품 #IRFB5620PBF
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데이터시트 IRFB5620PBF DataSheet
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패키지 TO-220-3
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사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 72.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1710 pF @ 50 V |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
개요
Description
The device comes in a TO-220AB package, which is widely used for its ability to handle significant power levels while maintaining a compact form factor. The IRFB5620PBF is also lead-free and RoHS compliant, aligning with environmental regulations. Typical applications include motor drives, power supply units, DC-DC converters, and various automotive and industrial systems. Its robustness and performance make it a popular choice among engineers for demanding electrical and electronic applications.
Equivalent
1. STP55NF06 by STMicroelectronics
2. FQA55N10 by ON Semiconductor
3. NTP65N06R by ON Semiconductor
4. IPP60R190C6 by Infineon
These equivalents should be verified for compatibility based on specific requirements such as package type, voltage, and current ratings. Always consult the datasheets for detailed specifications.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 68A.
2. Low On-Resistance: It offers a low R_DS(on) of around 0.048 ohms, which minimizes power losses and improves efficiency.
3. Fast Switching: The MOSFET supports fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Efficiency: It features a low thermal resistance package, allowing for effective heat dissipation.
5. Lead-Free: The IRFB5620PBF is RoHS-compliant and lead-free, making it suitable for environmentally friendly designs.
6. Package Type: It is available in a TO-220 package, which is commonly used for power devices due to its robustness.
These features make the IRFB5620PBF suitable for applications such as power supplies, motor drives, and DC-DC converters.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is on or off, enabling or disabling the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the "on" state. It's connected to the load in most applications.
3. Source (S): The source is the terminal connected to the ground or the negative side of the power supply in an N-channel MOSFET configuration.
The IRFB5620PBF is typically used for high-speed switching applications, due to its fast switching capabilities, low on-resistance, and high current handling capacity. It is suitable for applications in automotive, industrial, and consumer electronics.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Utilized in both AC-DC and DC-DC converters for efficiency.
2. Motor Drives: Effective in controlling motors in industrial and consumer electronics.
3. Solar Inverters: Converts DC generated by solar panels to AC.
4. Uninterruptible Power Supplies (UPS): Ensures continuous power delivery.
5. Electric Vehicles: Used in power management systems.
6. Load Switches: Efficiently manages power distribution in circuits.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.