이미지는 참조용입니다.
IRFBE30PBF
+BOMMOSFET N-CH 800V 4.1A TO220AB
-
제조업체실리콘 닉스
-
제조업체 부품 #IRFBE30PBF
-
데이터시트 IRFBE30PBF DataSheet
-
패키지 TO-220-3
-
재고7609
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 78 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1300 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
개요
Description
The IRFBE30PBF is an N-channel power MOSFET designed for high-efficiency applications, often used in switching and amplifying circuits. Manufactured by Infineon Technologies, it features a low on-state resistance and high-speed switching capabilities, making it suitable for a variety of applications in power management. Its key specifications include a drain-to-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 1.5A, and a maximum power dissipation of around 43W. The device comes in a TO-220 package, which provides ease of mounting and efficient thermal management.
The MOSFET's design incorporates advanced processing technology to achieve low gate charge and minimized input capacitance, enhancing its performance in high-frequency operations. The IRFBE30PBF is also favored for its robustness and reliability, handling high voltages with minimal risk of breakdown. Its applications include DC-DC converters, motor control circuits, and other electronic devices where efficient power management is crucial. Overall, it is a versatile and efficient component widely used in electronics for its superior performance and reliability.
The MOSFET's design incorporates advanced processing technology to achieve low gate charge and minimized input capacitance, enhancing its performance in high-frequency operations. The IRFBE30PBF is also favored for its robustness and reliability, handling high voltages with minimal risk of breakdown. Its applications include DC-DC converters, motor control circuits, and other electronic devices where efficient power management is crucial. Overall, it is a versatile and efficient component widely used in electronics for its superior performance and reliability.
Equivalent
The IRFBE30PBF is a power MOSFET. Equivalent products include:
1. IRFBE30 by International Rectifier (non-PBF version)
2. FDPF13N50 by ON Semiconductor
3. STP10NK60Z by STMicroelectronics
4. IXFH10N50 by IXYS
5. FQA12N50C by Fairchild Semiconductor
Make sure to check the datasheets to verify the specifications and compatibility for your specific application.
1. IRFBE30 by International Rectifier (non-PBF version)
2. FDPF13N50 by ON Semiconductor
3. STP10NK60Z by STMicroelectronics
4. IXFH10N50 by IXYS
5. FQA12N50C by Fairchild Semiconductor
Make sure to check the datasheets to verify the specifications and compatibility for your specific application.
Features
The IRFBE30PBF is a N-channel power MOSFET designed for high efficiency and reliability in switching applications. Key features of this MOSFET include:
1. VDSS (Drain-Source Voltage): 100V, which determines the maximum voltage it can handle.
2. RDS(on) (Drain-Source On-Resistance): Typically low, around 0.04 ohms, ensuring minimal power loss and efficient current conduction.
3. ID (Continuous Drain Current): Can handle up to 23A at 25°C.
4. Qg (Total Gate Charge): Approximately 61nC, indicative of the energy needed to switch the device on and off, and reflects its suitability in fast switching applications.
5. Package Type: TO-220, which provides a solid thermal interface for heat dissipation.
6. Temperature Range: Designed to operate within a broad temperature range, ensuring versatility in various environments.
7. Technology: Based on HEXFET® technology, which is known for enhancing performance in terms of efficiency, reliability, and ruggedness.
8. Applications: Suitable for use in motor drivers, power supplies, and other applications demanding high efficiency and fast switching capabilities.
These features make it a reliable choice for demanding power management tasks.
1. VDSS (Drain-Source Voltage): 100V, which determines the maximum voltage it can handle.
2. RDS(on) (Drain-Source On-Resistance): Typically low, around 0.04 ohms, ensuring minimal power loss and efficient current conduction.
3. ID (Continuous Drain Current): Can handle up to 23A at 25°C.
4. Qg (Total Gate Charge): Approximately 61nC, indicative of the energy needed to switch the device on and off, and reflects its suitability in fast switching applications.
5. Package Type: TO-220, which provides a solid thermal interface for heat dissipation.
6. Temperature Range: Designed to operate within a broad temperature range, ensuring versatility in various environments.
7. Technology: Based on HEXFET® technology, which is known for enhancing performance in terms of efficiency, reliability, and ruggedness.
8. Applications: Suitable for use in motor drivers, power supplies, and other applications demanding high efficiency and fast switching capabilities.
These features make it a reliable choice for demanding power management tasks.
Pinout
The IRFBE30PBF is an N-channel MOSFET designed for high-speed switching applications. It typically comes in a TO-220 package. Here's a concise overview of its pin count and function:
- Pin Count: The IRFBE30PBF has three pins.
- Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is where the main current flows into the MOSFET when it is in the on state.
The MOSFET's role is to act as an electronic switch or amplifier, controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.
- Pin Count: The IRFBE30PBF has three pins.
- Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is where the main current flows into the MOSFET when it is in the on state.
The MOSFET's role is to act as an electronic switch or amplifier, controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.
Manufacturer
The IRFBE30PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. They specialize in power electronics, automotive systems, security, and IoT solutions. Infineon's products are widely used in various industries, including automotive, industrial, consumer electronics, and communication technology. The company is known for its innovative solutions and commitment to energy efficiency and sustainability.
Application
The IRFBE30PBF is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Supply Units: Used in switching power supplies for high-efficiency energy conversion.
2. Motor Control: Employed in motor drivers for industrial applications, robotics, and consumer electronics.
3. Automotive Systems: Utilized in applications like electric vehicle power management and battery management systems.
4. Renewable Energy: Plays a role in solar inverters and wind turbine control systems.
5. Lighting Systems: Involved in LED drivers and other advanced lighting solutions.
6. Amplifiers: Used in audio amplification systems for improved sound quality.
These applications benefit from the IRFBE30PBF's fast switching speeds and low on-state resistance.
1. Power Supply Units: Used in switching power supplies for high-efficiency energy conversion.
2. Motor Control: Employed in motor drivers for industrial applications, robotics, and consumer electronics.
3. Automotive Systems: Utilized in applications like electric vehicle power management and battery management systems.
4. Renewable Energy: Plays a role in solar inverters and wind turbine control systems.
5. Lighting Systems: Involved in LED drivers and other advanced lighting solutions.
6. Amplifiers: Used in audio amplification systems for improved sound quality.
These applications benefit from the IRFBE30PBF's fast switching speeds and low on-state resistance.
Package
The IRFBE30PBF is a power MOSFET that comes in a TO-220 package type.
