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IRFD9024PBF
+BOMMOSFET P-CH 60V 1.6A 4DIP
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제조업체실리콘 닉스
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제조업체 부품 #IRFD9024PBF
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데이터시트 IRFD9024PBF DataSheet
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9024 |
개요
Description
The IRFD9024PBF is a N-channel MOSFET designed for high-speed switching applications. It features a low on-resistance (R_DS(on)) and a high maximum drain-source voltage (V_DS), making it suitable for various power management circuits, including DC-DC converters and motor drivers. The device typically has a gate threshold voltage (V_GS(th)) that allows it to be easily driven by standard logic levels, facilitating integration into compact circuit designs.
With a maximum continuous drain current (I_D) rating, the IRFD9024PBF is ideal for applications requiring efficient power handling and minimal energy loss. Its fast switching speed minimizes transition losses, enhancing overall system efficiency. The MOSFET is offered in a surface-mount package, which supports automated assembly processes and contributes to space-saving designs.
As part of the IRF family of MOSFETs, the IRFD9024PBF is recognized for its reliability and performance in demanding environments. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines for optimal use.
With a maximum continuous drain current (I_D) rating, the IRFD9024PBF is ideal for applications requiring efficient power handling and minimal energy loss. Its fast switching speed minimizes transition losses, enhancing overall system efficiency. The MOSFET is offered in a surface-mount package, which supports automated assembly processes and contributes to space-saving designs.
As part of the IRF family of MOSFETs, the IRFD9024PBF is recognized for its reliability and performance in demanding environments. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines for optimal use.
Equivalent
The IRFD9024PBF is a N-channel MOSFET. Equivalent products include the BSS138, IRF540, and SI2302. Check specifications like voltage, current ratings, and package types to ensure compatibility. Always refer to datasheets for detailed comparisons to ensure proper application.
Features
The IRFD9024PBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.
2. Current Handling: With a continuous drain current (I_D) rating of up to 49A, it effectively manages significant loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low (around 0.025 ohms), which minimizes power loss during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing efficiency in applications like power supplies and motor controllers.
5. Thermal Performance: It has a high power dissipation capability with a thermal resistance rating that allows for effective heat management.
6. Package Type: Available in a TO-220 package, facilitating easy heat sinking and integration into various designs.
7. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easy drive and control in logic-level applications.
Overall, the IRFD9024PBF offers robust performance for demanding electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.
2. Current Handling: With a continuous drain current (I_D) rating of up to 49A, it effectively manages significant loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low (around 0.025 ohms), which minimizes power loss during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing efficiency in applications like power supplies and motor controllers.
5. Thermal Performance: It has a high power dissipation capability with a thermal resistance rating that allows for effective heat management.
6. Package Type: Available in a TO-220 package, facilitating easy heat sinking and integration into various designs.
7. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easy drive and control in logic-level applications.
Overall, the IRFD9024PBF offers robust performance for demanding electronic applications.
Pinout
The IRFD9024PBF is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET from the load. It is the terminal through which the main current flows.
3. Source (S): The source pin is where the current exits the MOSFET back to the power supply or ground.
4. Body (B): The body or substrate is internally connected to the source in most MOSFETs, including this one.
The IRFD9024PBF is commonly used in switching applications and is designed to handle high currents and voltages, making it suitable for various power management tasks in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET from the load. It is the terminal through which the main current flows.
3. Source (S): The source pin is where the current exits the MOSFET back to the power supply or ground.
4. Body (B): The body or substrate is internally connected to the source in most MOSFETs, including this one.
The IRFD9024PBF is commonly used in switching applications and is designed to handle high currents and voltages, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The IRFD9024PBF is manufactured by International Rectifier, which is a part of Infineon Technologies AG. International Rectifier specializes in power management and energy-efficient solutions, particularly in the field of semiconductor devices. The company provides a range of products, including MOSFETs, diodes, and integrated circuits that are widely used in various applications such as consumer electronics, automotive systems, and industrial equipment. Infineon Technologies, based in Germany, is a leading global semiconductor manufacturer that focuses on power semiconductors, sensor solutions, and security technologies. The acquisition of International Rectifier by Infineon in 2015 bolstered its offerings in power management and advanced semiconductor solutions.
Application
The IRFD9024PBF is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies: Efficiently regulating output voltage and current.
2. DC-DC Converters: Serving as a switch in boost, buck, or buck-boost converters.
3. Motor Control: Driving inductive loads in brushless DC motors.
4. Load Switching: Controlling power to various electronic devices.
5. LED Drivers: Managing current for LED lighting systems.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs.
1. Switching Power Supplies: Efficiently regulating output voltage and current.
2. DC-DC Converters: Serving as a switch in boost, buck, or buck-boost converters.
3. Motor Control: Driving inductive loads in brushless DC motors.
4. Load Switching: Controlling power to various electronic devices.
5. LED Drivers: Managing current for LED lighting systems.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs.
Package
The IRFD9024PBF is packaged in a TO-220 format, which is a popular package type for power MOSFETs. This package provides good thermal performance and is suitable for applications requiring efficient heat dissipation.
