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IRFH5110TRPBF
+BOMMOSFET N-CH 100V 11A/63A 8PQFN
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFH5110TRPBF
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데이터시트 IRFH5110TRPBF DataSheet
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사양
| 속성 | 가치 |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3152 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | IRFH5110 |
개요
Description
The IRFH5110TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. This component features a low on-resistance, allowing for efficient power conversion and minimal energy loss during operation. It is particularly suitable for use in power supplies, motor drives, and other applications requiring high efficiency and reliability.
Key specifications include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) rating of 80A, and a low gate threshold voltage, making it easy to drive in various circuits. The IRFH5110TRPBF is housed in a TO-220 package, which aids in heat dissipation, ensuring stable performance under high load conditions.
Overall, the IRFH5110TRPBF is favored for its robustness and efficiency in demanding electronic designs, making it a reliable choice for engineers in the field of power electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) rating of 80A, and a low gate threshold voltage, making it easy to drive in various circuits. The IRFH5110TRPBF is housed in a TO-220 package, which aids in heat dissipation, ensuring stable performance under high load conditions.
Overall, the IRFH5110TRPBF is favored for its robustness and efficiency in demanding electronic designs, making it a reliable choice for engineers in the field of power electronics.
Equivalent
The IRFH5110TRPBF is an N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N06, and BSS138. For specific applications, verify parameters like RDS(on), VDS, and I_D ratings before substitution. Always consult datasheets to ensure compatibility.
Features
The IRFH5110TRPBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 30A at a temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 7.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for rapid switching capabilities, making it ideal for high-frequency applications like DC-DC converters.
5. Thermal Performance: Good thermal stability with a maximum junction temperature of 175°C, ensuring reliability under stress.
6. Package: Available in a TO-220 package, facilitating easier heat dissipation and mounting.
Overall, the IRFH5110TRPBF is optimized for power management applications, including automotive and industrial systems.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 30A at a temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 7.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for rapid switching capabilities, making it ideal for high-frequency applications like DC-DC converters.
5. Thermal Performance: Good thermal stability with a maximum junction temperature of 175°C, ensuring reliability under stress.
6. Package: Available in a TO-220 package, facilitating easier heat dissipation and mounting.
Overall, the IRFH5110TRPBF is optimized for power management applications, including automotive and industrial systems.
Pinout
The IRFH5110TRPBF is an N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The specific pin configuration is as follows:
1. Pin 1: Source
2. Pin 2: Gate
3. Pin 3: Drain
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
7. Pin 7: Source
8. Pin 8: Drain
The device is designed for high-efficiency applications, including power management and switching power supplies, with features such as low on-resistance and fast switching capabilities.
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The specific pin configuration is as follows:
1. Pin 1: Source
2. Pin 2: Gate
3. Pin 3: Drain
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
7. Pin 7: Source
8. Pin 8: Drain
The device is designed for high-efficiency applications, including power management and switching power supplies, with features such as low on-resistance and fast switching capabilities.
Manufacturer
The IRFH5110TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing advanced semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is particularly known for its products related to power management, energy efficiency, and connectivity. The IRFH5110TRPBF is a N-channel MOSFET used in power applications, known for its high efficiency and performance characteristics, making it suitable for a range of applications in power conversion and management. Infineon plays a significant role in the semiconductor industry, driving innovation in technologies that enable sustainable and efficient energy use.
Application
The IRFH5110TRPBF is a high-performance N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Efficient switching in buck and boost converters.
2. Power Supply Circuits: Used in power supplies for computers, servers, and industrial equipment.
3. Motor Drives: Suitable for driving DC and brushless motors in various applications.
4. Load Switching: Acts as a switch for high-current loads in consumer electronics.
5. Battery Management Systems: Helps manage charging and discharging functions in battery packs.
Its low RDS(on) and high-speed switching capabilities make it ideal for these applications.
1. DC-DC Converters: Efficient switching in buck and boost converters.
2. Power Supply Circuits: Used in power supplies for computers, servers, and industrial equipment.
3. Motor Drives: Suitable for driving DC and brushless motors in various applications.
4. Load Switching: Acts as a switch for high-current loads in consumer electronics.
5. Battery Management Systems: Helps manage charging and discharging functions in battery packs.
Its low RDS(on) and high-speed switching capabilities make it ideal for these applications.
Package
The IRFH5110TRPBF is packaged in a TO-220 format. This package type is commonly used for power MOSFETs and allows for effective heat dissipation and easy mounting on heatsinks.
