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IRFH8324TRPBF
+BOMMOSFET N-CH 30V 23A/90A PQFN
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFH8324TRPBF
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데이터시트 IRFH8324TRPBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 23A (Ta), 90A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.1mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 31 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2380 pF @ 10 V |
| Power Dissipation (Max) | 3.6W (Ta), 54W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) |
개요
Description
The IRFH8324TRPBF is a power MOSFET designed by Infineon Technologies, often used in various electronic applications for efficient power management. It is part of the HEXFET® Power MOSFET family, known for its low on-resistance and robust performance. This specific model is housed in a DirectFET package, which provides high thermal performance and low package inductance, making it suitable for high-frequency applications.
Key features of the IRFH8324TRPBF include a low on-state resistance (RDS(on)), which reduces power loss and improves efficiency, and a high-speed switching capability. It is typically used in applications such as DC-DC converters, synchronous rectification, and motor drives, where efficiency and reliability are crucial. The device can handle a significant amount of current and voltage, making it versatile for various power control applications.
Overall, the IRFH8324TRPBF is valued for its compact size, thermal efficiency, and electrical performance, making it a reliable choice for engineers and designers looking to optimize their power circuits.
Key features of the IRFH8324TRPBF include a low on-state resistance (RDS(on)), which reduces power loss and improves efficiency, and a high-speed switching capability. It is typically used in applications such as DC-DC converters, synchronous rectification, and motor drives, where efficiency and reliability are crucial. The device can handle a significant amount of current and voltage, making it versatile for various power control applications.
Overall, the IRFH8324TRPBF is valued for its compact size, thermal efficiency, and electrical performance, making it a reliable choice for engineers and designers looking to optimize their power circuits.
Equivalent
The IRFH8324TRPBF is a power MOSFET commonly used in switching applications. Equivalent products may include MOSFETs with similar specifications such as voltage rating, current capacity, and package type. Some possible equivalents are:
1. NXP PSMNR70-30YL
2. Infineon BSC067N06NS3G
3. ON Semiconductor NTMFS4941NFL
4. Vishay SiR870DP
Make sure to verify the exact specifications like RDS(on), Vgs, and thermal performance to ensure compatibility with your application.
1. NXP PSMNR70-30YL
2. Infineon BSC067N06NS3G
3. ON Semiconductor NTMFS4941NFL
4. Vishay SiR870DP
Make sure to verify the exact specifications like RDS(on), Vgs, and thermal performance to ensure compatibility with your application.
Features
The IRFH8324TRPBF is a power MOSFET designed for efficient power conversion applications. This device features a single N-channel MOSFET with a maximum drain-source voltage (V_DS) of 25V and a continuous drain current (I_D) of 39A at 25°C. It is engineered with a low on-resistance (R_DS(on)) to minimize power loss and improve efficiency, typically around 5.3mΩ at 10V gate-source voltage (V_GS).
Key features include a maximum gate-source voltage (V_GS) of ±20V, a total gate charge (Q_g) of approximately 13nC, and a fast switching capability due to its low gate charge and capacitances. The MOSFET is housed in a compact, thermally enhanced PowerPAK® SO-8 package, which offers good thermal performance and reduced board space usage. This makes it ideal for high-frequency applications like DC-DC converters, load switches, and synchronous rectification in power supplies. Additionally, the IRFH8324TRPBF is lead-free and compliant with RoHS standards, ensuring it meets environmental regulations.
Key features include a maximum gate-source voltage (V_GS) of ±20V, a total gate charge (Q_g) of approximately 13nC, and a fast switching capability due to its low gate charge and capacitances. The MOSFET is housed in a compact, thermally enhanced PowerPAK® SO-8 package, which offers good thermal performance and reduced board space usage. This makes it ideal for high-frequency applications like DC-DC converters, load switches, and synchronous rectification in power supplies. Additionally, the IRFH8324TRPBF is lead-free and compliant with RoHS standards, ensuring it meets environmental regulations.
Pinout
The IRFH8324TRPBF is a HEXFET power MOSFET produced by Infineon Technologies, previously International Rectifier. It typically comes in a 5-pin Power SO-8 package. Here are the pin functions:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Source (S): The source terminal for the current flowing through the MOSFET.
3. Drain (D): The drain terminal where the load current flows out after entering the source.
4. Body (B) or Substrate: Internally connected, not usually exposed or counted in typical external pin connections.
In terms of specific pin configuration for the Power SO-8 package:
- Pins 1-3: Source (S)
- Pin 4: Gate (G)
- Pins 5-8: Drain (D)
This MOSFET is designed for fast switching and features low on-state resistance, making it suitable for power management applications like DC-DC converters.
1. Gate (G): Controls the on/off state of the MOSFET.
2. Source (S): The source terminal for the current flowing through the MOSFET.
3. Drain (D): The drain terminal where the load current flows out after entering the source.
4. Body (B) or Substrate: Internally connected, not usually exposed or counted in typical external pin connections.
In terms of specific pin configuration for the Power SO-8 package:
- Pins 1-3: Source (S)
- Pin 4: Gate (G)
- Pins 5-8: Drain (D)
This MOSFET is designed for fast switching and features low on-state resistance, making it suitable for power management applications like DC-DC converters.
Manufacturer
The IRFH8324TRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that produces a wide range of electronic components, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various industries such as automotive, industrial, consumer electronics, and communication technologies. Infineon is known for its focus on energy efficiency, mobility, and security solutions.
Application
The IRFH8324TRPBF is a power MOSFET that is commonly used in various applications, including DC-DC converters, motor control, and power management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power conversion in computing, telecommunications, and industrial applications. Additionally, it can be used in battery management systems, automotive applications, and as a component in power supply modules due to its reliability and thermal performance. Its compact package also makes it ideal for space-constrained applications.
Package
The IRFH8324TRPBF is a power MOSFET packaged in a PQFN (Power Quad Flat No-Lead) type. This packaging is designed to offer improved thermal and electrical performance while maintaining a compact footprint ideal for high-density applications.
