사양
| 속성 | 가치 |
| Package | Bag |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 36mOhm @ 23A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1900 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
개요
Description
The IRFP150N is an N-channel power MOSFET designed for high-current and high-voltage applications. Key features include:
- Voltage Rating: 100V (VDSS)
- Current Handling: 42A continuous (ID at 25°C)
- Low On-Resistance: 40mΩ (RDS(on))
- High Power Dissipation: 180W
Commonly used in switching power supplies, motor drives, and inverters, it offers efficient performance with fast switching speeds. The TO-247 package ensures robust thermal management.
Advantages:
✔ High current capacity
✔ Low conduction losses
✔ Suitable for industrial applications
Limitations:
✖ Requires proper heat sinking at high loads
✖ Gate drive voltage (VGS) must be 10V for full enhancement
For optimal use, ensure proper gate driving and thermal design. Datasheet consultation is recommended for detailed specs.
- Voltage Rating: 100V (VDSS)
- Current Handling: 42A continuous (ID at 25°C)
- Low On-Resistance: 40mΩ (RDS(on))
- High Power Dissipation: 180W
Commonly used in switching power supplies, motor drives, and inverters, it offers efficient performance with fast switching speeds. The TO-247 package ensures robust thermal management.
Advantages:
✔ High current capacity
✔ Low conduction losses
✔ Suitable for industrial applications
Limitations:
✖ Requires proper heat sinking at high loads
✖ Gate drive voltage (VGS) must be 10V for full enhancement
For optimal use, ensure proper gate driving and thermal design. Datasheet consultation is recommended for detailed specs.
Equivalent
Equivalent products to the IRFP150N (N-channel MOSFET, 100V, 42A) include:
- IRFP250N (200V, 30A)
- IRFP260N (200V, 50A)
- IRFP460 (500V, 20A)
- IRFP150 (100V, 42A, older version)
- STP80NF10 (100V, 80A, STMicroelectronics)
- FQP50N06 (60V, 50A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.
- IRFP250N (200V, 30A)
- IRFP260N (200V, 50A)
- IRFP460 (500V, 20A)
- IRFP150 (100V, 42A, older version)
- STP80NF10 (100V, 80A, STMicroelectronics)
- FQP50N06 (60V, 50A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.
Features
The IRFP150N is an N-channel power MOSFET with the following key features:
- Voltage Rating: 100V (VDSS)
- Current Rating: 42A (ID at 25°C)
- Low On-Resistance: 0.055Ω (RDS(on) at VGS = 10V)
- High Power Handling: 180W (PD)
- Fast Switching: Suitable for high-frequency applications
- Gate-Source Voltage (VGS): ±20V (max)
- Avalanche Energy Rated: Robust against inductive spikes
- TO-247 Package: Good thermal performance
Commonly used in power supplies, motor control, and inverters due to its high current capability and efficiency.
- Voltage Rating: 100V (VDSS)
- Current Rating: 42A (ID at 25°C)
- Low On-Resistance: 0.055Ω (RDS(on) at VGS = 10V)
- High Power Handling: 180W (PD)
- Fast Switching: Suitable for high-frequency applications
- Gate-Source Voltage (VGS): ±20V (max)
- Avalanche Energy Rated: Robust against inductive spikes
- TO-247 Package: Good thermal performance
Commonly used in power supplies, motor control, and inverters due to its high current capability and efficiency.
Pinout
The IRFP150N is a TO-247AC packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (typically driven by 4–10V).
2. Drain (D) – Main current-carrying terminal (connects to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDSS: 100V (max drain-source voltage).
- ID: 42A (continuous drain current).
- RDS(on): ~0.055Ω (low on-resistance).
Commonly used in power switching, motor drives, and inverters. Requires proper heat sinking due to high current handling.
1. Gate (G) – Controls the switching operation (typically driven by 4–10V).
2. Drain (D) – Main current-carrying terminal (connects to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDSS: 100V (max drain-source voltage).
- ID: 42A (continuous drain current).
- RDS(on): ~0.055Ω (low on-resistance).
Commonly used in power switching, motor drives, and inverters. Requires proper heat sinking due to high current handling.
Application
The IRFP150N, a power MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, inverters, and DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors in industrial and automotive systems.
3. Audio Amplifiers – High-power Class-D amplifier designs.
4. Lighting Systems – LED drivers and HID ballasts.
5. Renewable Energy – Solar inverters and wind power converters.
Its high current (42A) and voltage (100V) ratings make it suitable for high-power switching applications.
1. Power Supplies – Switching regulators, inverters, and DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors in industrial and automotive systems.
3. Audio Amplifiers – High-power Class-D amplifier designs.
4. Lighting Systems – LED drivers and HID ballasts.
5. Renewable Energy – Solar inverters and wind power converters.
Its high current (42A) and voltage (100V) ratings make it suitable for high-power switching applications.
Package
The IRFP150N is a power MOSFET housed in a TO-247AC package. This package type features three leads, a robust plastic body, and a metal tab for heat dissipation. It is designed for high-power applications, offering efficient thermal performance and mechanical durability. The TO-247AC is larger than the TO-220, providing better heat handling.
