사양
| 속성 | 가치 |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 46mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 4560 pF @ 25 V |
| PowerDissipation(Max) | 310W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
개요
Description
The IRFP4229PBF is an N-channel power MOSFET from Infineon Technologies, designed for high-power applications.
Key Features:
- Voltage Rating: 250V
- Current Rating: 78A (continuous)
- Low On-Resistance (RDS(on)): 19mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-frequency circuits
- Package: TO-247AC (through-hole, robust thermal performance)
Applications:
- Switching power supplies
- Motor drives
- DC-DC converters
- Audio amplifiers
Advantages:
- High current handling
- Low conduction losses
- Good thermal performance
Note: Requires proper gate drive (≥10V for full enhancement) and heat sinking in high-power applications.
This MOSFET is ideal for demanding power electronics where efficiency and reliability are critical.
Key Features:
- Voltage Rating: 250V
- Current Rating: 78A (continuous)
- Low On-Resistance (RDS(on)): 19mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-frequency circuits
- Package: TO-247AC (through-hole, robust thermal performance)
Applications:
- Switching power supplies
- Motor drives
- DC-DC converters
- Audio amplifiers
Advantages:
- High current handling
- Low conduction losses
- Good thermal performance
Note: Requires proper gate drive (≥10V for full enhancement) and heat sinking in high-power applications.
This MOSFET is ideal for demanding power electronics where efficiency and reliability are critical.
Equivalent
Equivalent products to the IRFP4229PBF (N-channel MOSFET, 200V, 60A, 0.06Ω) include:
- IRFP4242PBF (200V, 62A, 0.055Ω)
- IRFP4232PBF (200V, 62A, 0.055Ω)
- IRFP4668PBF (200V, 130A, 0.018Ω) – higher current rating
- STP80NF55-06 (55V, 80A, 0.006Ω) – lower voltage
- FDPF33N25 (250V, 33A, 0.11Ω)
Check datasheets for exact compatibility in your application.
- IRFP4242PBF (200V, 62A, 0.055Ω)
- IRFP4232PBF (200V, 62A, 0.055Ω)
- IRFP4668PBF (200V, 130A, 0.018Ω) – higher current rating
- STP80NF55-06 (55V, 80A, 0.006Ω) – lower voltage
- FDPF33N25 (250V, 33A, 0.11Ω)
Check datasheets for exact compatibility in your application.
Features
The IRFP4229PBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 250V (VDSS)
- Current Rating: 60A (ID at 25°C)
- Low On-Resistance: 36mΩ (max @ VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- High Power Handling: 330W power dissipation
- Gate Charge (Qg): 120nC (typical)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-247AC (through-hole, easy mounting)
Ideal for switching power supplies, motor drives, and inverters due to its high efficiency and rugged design.
- Voltage Rating: 250V (VDSS)
- Current Rating: 60A (ID at 25°C)
- Low On-Resistance: 36mΩ (max @ VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- High Power Handling: 330W power dissipation
- Gate Charge (Qg): 120nC (typical)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-247AC (through-hole, easy mounting)
Ideal for switching power supplies, motor drives, and inverters due to its high efficiency and rugged design.
Pinout
The IRFP4229PBF is a TO-247AC packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDSS: 250V (Drain-Source voltage)
- ID: 78A (Continuous drain current)
- RDS(on): 19mΩ (On-resistance)
- Power Dissipation: 330W
Commonly used in high-power switching applications like motor drives, inverters, and power supplies.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDSS: 250V (Drain-Source voltage)
- ID: 78A (Continuous drain current)
- RDS(on): 19mΩ (On-resistance)
- Power Dissipation: 330W
Commonly used in high-power switching applications like motor drives, inverters, and power supplies.
Application
The IRFP4229PBF, a high-power N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for industrial and automotive applications.
3. Inverters – Solar inverters, UPS systems.
4. Audio Amplifiers – High-power Class-D designs.
5. Industrial Equipment – Welding machines, induction heating.
Its high voltage (250V) and current (75A) ratings make it suitable for robust, high-efficiency switching applications.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for industrial and automotive applications.
3. Inverters – Solar inverters, UPS systems.
4. Audio Amplifiers – High-power Class-D designs.
5. Industrial Equipment – Welding machines, induction heating.
Its high voltage (250V) and current (75A) ratings make it suitable for robust, high-efficiency switching applications.
Package
The IRFP4229PBF is packaged in a TO-247AC (also known as TO-247-3) through-hole package. This package is robust, suitable for high-power applications, and features three leads for mounting. It provides efficient heat dissipation due to its design, making it ideal for power MOSFET applications.
