이미지는 참조용입니다.
IRFPF50PBF
+BOMMOSFET N-CH 900V 6.7A TO247-3
-
제조업체실리콘 닉스
-
제조업체 부품 #IRFPF50PBF
-
데이터시트 IRFPF50PBF DataSheet
-
재고2643
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Base Product Number | IRFPF50 |
개요
Description
The IRFPF50PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed primarily for applications in power management, including switching power supplies, motor control, and audio amplifiers. It features a maximum drain-source voltage (VDS) of 50V and a continuous drain current (ID) of up to 50A, making it suitable for high-power applications.
Key specifications include a low on-resistance (RDS(on)) of around 0.06 ohms, which helps reduce power loss during operation. The IRFPF50PBF has a fast switching speed, enabling efficient operation in high-frequency applications. Additionally, it is housed in a TO-220 package, which facilitates effective heat dissipation.
The "PBF" suffix indicates that the device is lead-free, complying with RoHS standards for environmental safety. Overall, the IRFPF50PBF is favored for its reliability and efficiency in various electronic designs, especially where high power and thermal management are critical.
Key specifications include a low on-resistance (RDS(on)) of around 0.06 ohms, which helps reduce power loss during operation. The IRFPF50PBF has a fast switching speed, enabling efficient operation in high-frequency applications. Additionally, it is housed in a TO-220 package, which facilitates effective heat dissipation.
The "PBF" suffix indicates that the device is lead-free, complying with RoHS standards for environmental safety. Overall, the IRFPF50PBF is favored for its reliability and efficiency in various electronic designs, especially where high power and thermal management are critical.
Equivalent
The IRFPF50PBF is a n-channel MOSFET. Equivalent products include the STP50NF06, FQP50N06, and BSC050N06S. These alternatives share similar voltage and current ratings, typically around 50V and 50A, with comparable Rds(on) values. Always verify specific parameters and datasheet details for exact compatibility in your application.
Features
The IRFPF50PBF is a N-channel power MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Capacity: The continuous drain current (I_D) is rated at 50A, allowing for significant load handling.
3. R_DS(on): Low on-resistance, typically 0.18 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2 to 4V, enabling easy interfacing with low-voltage control circuits.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting.
6. Fast Switching: Designed for rapid switching speeds, making it suitable for applications in power supplies, motor drives, and converters.
7. Thermal Performance: Robust thermal characteristics support high power applications.
These features make the IRFPF50PBF ideal for various industrial and consumer electronic applications requiring reliable performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Capacity: The continuous drain current (I_D) is rated at 50A, allowing for significant load handling.
3. R_DS(on): Low on-resistance, typically 0.18 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2 to 4V, enabling easy interfacing with low-voltage control circuits.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting.
6. Fast Switching: Designed for rapid switching speeds, making it suitable for applications in power supplies, motor drives, and converters.
7. Thermal Performance: Robust thermal characteristics support high power applications.
These features make the IRFPF50PBF ideal for various industrial and consumer electronic applications requiring reliable performance.
Pinout
The IRFPF50PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows into the device. It connects to the load or higher potential side of the circuit.
3. Source (S): This pin is the output terminal of the MOSFET, where current exits. It is typically connected to ground or a lower potential.
In terms of characteristics, the IRFPF50PBF can handle high voltages and currents, making it suitable for power applications such as motor control, power supplies, and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows into the device. It connects to the load or higher potential side of the circuit.
3. Source (S): This pin is the output terminal of the MOSFET, where current exits. It is typically connected to ground or a lower potential.
In terms of characteristics, the IRFPF50PBF can handle high voltages and currents, making it suitable for power applications such as motor control, power supplies, and switching applications.
Manufacturer
The IRFPF50PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive electronics, security systems, and industrial applications. The company is known for its innovation in power semiconductors, such as MOSFETs, IGBTs, and other devices that enhance energy efficiency and performance in various electronic applications.
Infineon was originally part of Siemens AG and became an independent company in 1999. Headquartered in Neubiberg, Germany, Infineon operates globally, serving diverse markets like automotive, industrial, consumer electronics, and Internet of Things (IoT). The IRFPF50PBF itself is a N-channel MOSFET known for its high efficiency and fast switching capabilities, making it suitable for applications in power supplies, motor control, and other electronic circuits.
Infineon was originally part of Siemens AG and became an independent company in 1999. Headquartered in Neubiberg, Germany, Infineon operates globally, serving diverse markets like automotive, industrial, consumer electronics, and Internet of Things (IoT). The IRFPF50PBF itself is a N-channel MOSFET known for its high efficiency and fast switching capabilities, making it suitable for applications in power supplies, motor control, and other electronic circuits.
Application
The IRFPF50PBF is an N-channel MOSFET primarily used in applications such as power supply converters, motor control, and audio amplifiers. Its high voltage and current ratings make it suitable for switching power supplies, DC-DC converters, and inverters in renewable energy systems. Additionally, it is utilized in industrial equipment and automotive applications for efficient power management and control. The device's fast switching capabilities also enable its use in high-frequency applications. Overall, it serves in various sectors requiring reliable power handling and efficiency.
Package
The IRFPF50PBF is typically packaged in a TO-220 format. This package type features three leads and is designed for efficient heat dissipation, making it suitable for power applications.
