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IRFR220NTRPBF
+BOMMOSFET N-CH 200V 5A DPAK
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFR220NTRPBF
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데이터시트 IRFR220NTRPBF DataSheet
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패키지 TO-252-3
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재고6860
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 300 pF @ 25 V |
| PowerDissipation(Max) | 43W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
개요
Description
Key characteristics include:
1. N-Channel MOSFET: Operates with an N-channel, meaning it conducts when a positive voltage is applied to the gate terminal relative to the source terminal.
2. Voltage and Current Ratings: Typically, it can handle significant voltage and current levels, making it suitable for various power applications.
3. Low On-Resistance: Features low on-resistance, which reduces power loss and heat generation during operation, enhancing the overall efficiency of the system.
4. Applications: Commonly used in power supply circuits, motor controllers, and audio amplifiers due to its robust performance characteristics.
5. Packaging: Available in a TO-220 package, which allows for efficient heat dissipation and easy mounting on PCBs.
Overall, the IRFR220NTRPBF is valued for its reliability and performance in power management systems.
Equivalent
1. NXP Semiconductors: BSS123LT1G
2. ON Semiconductor: NTD4906NT4G
3. STMicroelectronics: STF10NM60ND
4. Fairchild Semiconductor: FQP27P06
5. Vishay Siliconix: Si2302DS
When considering equivalents, always verify the specifications such as voltage, current, and package type to ensure compatibility with your application.
Features
1. Drain-Source Voltage (Vds): Maximum of 200V, making it suitable for high-voltage applications.
2. Continuous Drain Current (Id): Capable of handling up to 6.7A, allowing for moderate power handling.
3. RDS(on): Low on-resistance of approximately 0.27 ohms, ensuring efficient conduction with minimal power loss.
4. Threshold Voltage (Vgs(th)): Typically around 2-4V, facilitating operation in standard voltage environments.
5. Package Type: Available in a DPAK (TO-252) package, which is conducive to surface-mount assembly.
6. Operating Temperature: Can operate within a wide temperature range of -55°C to 175°C.
7. Applications: Suitable for switching applications, power management, and industrial electronics.
8. Manufacturer: Produced by Infineon Technologies, ensuring high-quality and reliable performance.
These features make the IRFR220NTRPBF versatile for use in various electronic devices requiring robust performance under challenging conditions.
Pinout
1. Gate: This pin controls the transistor's on/off state. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain: The main terminal through which current enters the MOSFET when it is in the "on" state.
3. Source: The terminal through which current exits the MOSFET.
The IRFR220NTRPBF is an N-channel MOSFET, meaning it conducts when a positive voltage is applied to the gate relative to the source. It is primarily used for switching and amplifying electronic signals in power management applications.
Manufacturer
Application
1. Power Management Systems: Utilized in power supplies and voltage regulators for efficient power conversion.
2. Motor Control: Employed in motor drivers and controllers for automotive and industrial use.
3. Switching Circuits: Ideal for high-speed switching in circuits, including DC-DC converters.
4. Lighting Applications: Used in LED drivers and other lighting controls.
5. Consumer Electronics: Found in home appliances and audio equipment for efficient power handling.
These applications benefit from its low on-resistance and high-speed switching capabilities.