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IRFR3710ZTRPBF
+BOMMOSFET N-CH 100V 42A DPAK
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFR3710ZTRPBF
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데이터시트 IRFR3710ZTRPBF DataSheet
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패키지 TO-252-3
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2930 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
개요
Description
Key features of the IRFR3710ZTRPBF include:
1. N-Channel MOSFET: It operates as an N-channel device, which typically features low on-state resistance, allowing for efficient power conversion.
2. Voltage and Current Ratings: This MOSFET is designed to handle significant voltages and currents, making it suitable for high-power applications. Specific ratings should be checked in the datasheet.
3. Package Type: The "TRPBF" designation often refers to the packaging and lead finish, indicating it is RoHS compliant (lead-free) and usually available in a standard package for surface mounting.
4. Efficiency: The device is engineered to deliver high efficiency with reduced power losses, enhancing overall system performance.
These attributes make the IRFR3710ZTRPBF a reliable choice for engineers designing circuits that require robust power handling capabilities.
Equivalent
1. STP60NF06 from STMicroelectronics
2. FQP30N06L from ON Semiconductor
3. IRLZ44NPBF from Infineon Technologies (formerly part of International Rectifier)
4. NTD5867NL from ON Semiconductor
Always verify the specifications such as voltage, current, and Rds(on) to ensure compatibility for your specific application.
Features
1. N-Channel MOSFET: It is designed for switching and amplifying electronic signals in N-Channel mode.
2. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 57A.
3. Low On-Resistance: It has a low on-state resistance (R_DS(on)) which minimizes power loss and increases efficiency.
4. Fast Switching: Capable of high-speed switching, which enhances performance in quick-response applications.
5. Package Type: Comes in a D-Pak (TO-252) surface-mount package, making it suitable for compact designs.
6. RoHS Compliant: It meets the Restriction of Hazardous Substances standards, ensuring environmental safety.
These features make the IRFR3710ZTRPBF highly suitable for applications like DC-DC converters, motor drives, and load switches in various electronic devices.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IRFR3710ZTRPBF is used for applications requiring efficient power management and switching, such as in motor controllers, power supplies, and other electronic circuits. It is part of the HEXFET® Power MOSFET range, designed for low on-state resistance and fast switching speeds.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Ideal for controlling motors in industrial and consumer applications due to its high efficiency and fast switching capabilities.
3. DC-DC Converters: Utilized in DC-DC conversion circuits for efficient power conversion.
4. Battery Management: Employed in battery charging and protection circuits.
5. Automotive Systems: Used in various automotive electronics for power control and distribution.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.