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IRFR4104TRPBF
+BOMMOSFET N-CH 40V 42A DPAK
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFR4104TRPBF
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데이터시트 IRFR4104TRPBF DataSheet
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사양
| 속성 | 가치 |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR4104 |
개요
Description
Key features often include low on-resistance, fast switching speeds, and high thermal performance, making it suitable for applications in power supplies, DC-DC converters, and motor drives. The device is designed for use in various consumer electronics, automotive systems, and industrial controls, emphasizing reliability and efficiency.
When selecting components like the IRFR4104TRPBF, engineers consider parameters such as voltage ratings, current ratings, and thermal characteristics to ensure optimal performance within their specific applications. Understanding these specifications and characteristics is crucial for successful implementation in electronic design.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for medium-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 40A, providing robust performance in power circuits.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 0.025 ohms at a gate-source voltage (VGS) of 10V, ensuring minimal power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for efficient switching and control in low-voltage applications.
5. Package Type: It comes in a TO-220 package, which aids in heat dissipation, enhancing reliability and performance in high-current applications.
6. Fast Switching: The MOSFET allows for rapid switching speeds, making it ideal for applications like DC-DC converters and motor drivers.
These features make the IRFR4104TRPBF a versatile choice for both consumer and industrial power applications.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin turns the device on.
2. Drain (D) - The drain is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - The source is where the current flows into the MOSFET. In N-channel devices, it is typically connected to ground or a lower potential.
4. Body Diode (internal) - While not an external pin, it is important to note that this MOSFET contains an intrinsic body diode that allows current to flow from the source to the drain when the MOSFET is off.
The IRFR4104TRPBF is commonly used in power switching applications due to its low on-resistance and high-efficiency characteristics.
Manufacturer
Vishay specializes in a wide range of products including power MOSFETs, diodes, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, computing, consumer electronics, and telecommunications. The company is known for its commitment to innovation and quality, providing solutions for applications that require reliable and efficient electronic components. Vishay also emphasizes sustainability and has initiatives aimed at reducing the environmental impact of its operations and products.