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IRFS3206TRRPBF
+BOMMOSFET N-CH 60V 120A D2PAK
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFS3206TRRPBF
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데이터시트 IRFS3206TRRPBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3mOhm @ 75A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6540 pF @ 50 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
개요
Description
The IRFS3206TRRPBF is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for use in high-efficiency power management applications, such as power supplies, motor controllers, and DC-DC converters. This component belongs to the HEXFET® family, known for their efficiency and reliability in power conversion.
Key features of the IRFS3206TRRPBF include a low on-state resistance, which minimizes power loss and improves efficiency, and a fast switching speed, which is beneficial for high-frequency applications. It typically comes in a TO-220, TO-220 Full-Pak, or similar package, which facilitates heat dissipation and is suitable for through-hole mounting.
The IRFS3206TRRPBF is capable of handling high current and voltage levels, making it suitable for demanding applications. Additionally, it is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, this MOSFET is a reliable choice for engineers looking to optimize their power supply designs.
Key features of the IRFS3206TRRPBF include a low on-state resistance, which minimizes power loss and improves efficiency, and a fast switching speed, which is beneficial for high-frequency applications. It typically comes in a TO-220, TO-220 Full-Pak, or similar package, which facilitates heat dissipation and is suitable for through-hole mounting.
The IRFS3206TRRPBF is capable of handling high current and voltage levels, making it suitable for demanding applications. Additionally, it is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, this MOSFET is a reliable choice for engineers looking to optimize their power supply designs.
Equivalent
The IRFS3206TRRPBF is a MOSFET produced by Infineon Technologies. Equivalent products may include the NXP PSMN2R0-30PL, ON Semiconductor NTMFS5C404NL, and Vishay SIHP033N10E. Ensure compatibility by checking datasheets for parameters such as voltage rating, current capacity, Rds(on), and package type to match the specific requirements of your application.
Features
The IRFS3206TRRPBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 60V, suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 120A.
3. R_DS(on): It offers low on-resistance, typically around 8.0 mΩ, minimizing power losses and enhancing efficiency.
4. Package: Comes in a TO-220 package, which provides good thermal performance and ease of mounting.
5. High-Speed Switching: Designed for fast switching speeds, improving overall system performance.
6. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability under various conditions.
7. RoHS Compliant: It is lead-free and compliant with environmental standards, aligning with global ecological regulations.
These features make the IRFS3206TRRPBF suitable for applications such as DC-DC converters, motor controllers, and other power management systems.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 60V, suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 120A.
3. R_DS(on): It offers low on-resistance, typically around 8.0 mΩ, minimizing power losses and enhancing efficiency.
4. Package: Comes in a TO-220 package, which provides good thermal performance and ease of mounting.
5. High-Speed Switching: Designed for fast switching speeds, improving overall system performance.
6. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability under various conditions.
7. RoHS Compliant: It is lead-free and compliant with environmental standards, aligning with global ecological regulations.
These features make the IRFS3206TRRPBF suitable for applications such as DC-DC converters, motor controllers, and other power management systems.
Pinout
The IRFS3206TRRPBF is an N-channel MOSFET designed for high-current applications. It comes in a TO-263 package, which typically has a pin count of three. The primary functions of these pins are:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing or stopping the flow of current between the drain and source.
2. Drain (D): This pin is where the main current flows out when the MOSFET is turned on. It is connected to the load in a circuit.
3. Source (S): This pin acts as the return path for the current flowing through the MOSFET when it is on. It is typically connected to the ground or the negative side of the power supply.
The IRFS3206TRRPBF is well-suited for applications requiring efficient power handling and low on-resistance.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing or stopping the flow of current between the drain and source.
2. Drain (D): This pin is where the main current flows out when the MOSFET is turned on. It is connected to the load in a circuit.
3. Source (S): This pin acts as the return path for the current flowing through the MOSFET when it is on. It is typically connected to the ground or the negative side of the power supply.
The IRFS3206TRRPBF is well-suited for applications requiring efficient power handling and low on-resistance.
Manufacturer
The IRFS3206TRRPBF is manufactured by Infineon Technologies AG. Infineon is a German company that specializes in semiconductor solutions. It was originally a part of Siemens AG before becoming an independent entity in 1999. Infineon is recognized for producing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and integrated circuits for automotive, industrial, and consumer applications. The company's expertise extends to power management, automotive electronics, security applications, and embedded systems, making it a key player in the global semiconductor industry.
Application
The IRFS3206TRRPBF is a N-channel MOSFET commonly used in various electronic applications. It is ideal for applications requiring high efficiency and power management, such as power supplies, DC-DC converters, and motor control systems. Its fast switching capabilities also make it suitable for use in synchronous rectification and high-frequency circuits. Additionally, it's used in automotive systems, including electric vehicles, due to its ability to handle high currents and voltages. The MOSFET's robust construction ensures reliability in harsh environments, making it a good choice for industrial applications.
Package
The IRFS3206TRRPBF is a MOSFET transistor packaged in a D2PAK (TO-263) type. This surface-mount package is designed for high power applications and features a low on-resistance, making it suitable for efficient power management and switching tasks.
