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IRFZ34NSTRLPBF
+BOMMOSFET N-CH 55V 29A D2PAK
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRFZ34NSTRLPBF
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데이터시트 IRFZ34NSTRLPBF DataSheet
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패키지 TO-252-3
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재고6043
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 40mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 700 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
개요
Description
- Voltage Rating: 55V (Drain-to-Source, VDS)
- Current Rating: 30A (continuous drain current, ID)
- Low On-Resistance: 35mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance.
- Package: TO-263 (D2PAK), suitable for surface-mount applications.
Common uses include power supplies, motor control, DC-DC converters, and load switching. Its low RDS(on) minimizes conduction losses, improving efficiency. The device is RoHS-compliant and features a logic-level gate drive (fully enhanced at 10V).
For detailed specs, refer to the datasheet.
Equivalent
- IRFZ34NPBF (same specs, different package)
- IRFZ44NPBF (higher voltage, 55V, 49A)
- STP55NF06L (55V, 50A, lower RDS(on))
- FQP30N06L (60V, 32A, similar characteristics)
Check datasheets for exact compatibility in your application.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- 55V Drain-Source Voltage (VDS)
- 35A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 44mΩ @ 10V VGS)
- Fast switching for power applications
Commonly used in DC-DC converters, motor control, and power switching circuits.