사양
| 속성 | 가치 |
| Package | Tube |
| ProductStatus | Obsolete |
| IGBTType | NPT |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 60 A |
| Current-CollectorPulsed(Icm) | 120 A |
| Vce(on)(Max)@VgeIc | 4V @ 15V, 60A |
| Power-Max | 300 W |
| SwitchingEnergy | 1.07mJ (on), 1.49mJ (off) |
| InputType | Standard |
| GateCharge | 169 nC |
| TestCondition | 600V, 25A, 5Ohm, 15V |
| ReverseRecoveryTime(trr) | 300 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
개요
Description
The IRGP30B120KD-EP is an insulated gate bipolar transistor (IGBT) module designed for high-efficiency power switching applications. Manufactured by Infineon Technologies, this component integrates advanced trench and field-stop technology to enhance performance. It boasts a voltage rating of 1200V and a current handling capacity of 30A, making it suitable for demanding applications such as motor drives, renewable energy systems, and industrial inverters.
Key features of the IRGP30B120KD-EP include low switching losses, high-speed switching capabilities, and robust short-circuit ruggedness. The module is designed to operate efficiently at high temperatures, with minimal thermal resistance contributing to its reliability and longevity. Additionally, its compact design and easy integration into existing systems make it a versatile choice for engineers seeking to optimize power efficiency and system performance.
In summary, the IRGP30B120KD-EP serves as a dependable solution for applications requiring efficient power management, combining high performance with durability to meet the needs of modern electrical systems.
Key features of the IRGP30B120KD-EP include low switching losses, high-speed switching capabilities, and robust short-circuit ruggedness. The module is designed to operate efficiently at high temperatures, with minimal thermal resistance contributing to its reliability and longevity. Additionally, its compact design and easy integration into existing systems make it a versatile choice for engineers seeking to optimize power efficiency and system performance.
In summary, the IRGP30B120KD-EP serves as a dependable solution for applications requiring efficient power management, combining high performance with durability to meet the needs of modern electrical systems.
Equivalent
The IRGP30B120KD-EP is an IGBT (Insulated Gate Bipolar Transistor) used for fast switching applications. Equivalent products can include IGBTs with similar voltage, current ratings, and switching speeds such as:
1. Infineon IKW30N120T2
2. Mitsubishi CM30MDU-12F
3. STMicroelectronics STGW20NC120HD
4. ON Semiconductor FGA25N120ANTD
Ensure compatibility with your specific application by checking detailed specifications.
1. Infineon IKW30N120T2
2. Mitsubishi CM30MDU-12F
3. STMicroelectronics STGW20NC120HD
4. ON Semiconductor FGA25N120ANTD
Ensure compatibility with your specific application by checking detailed specifications.
Features
The IRGP30B120KD-EP is an insulated gate bipolar transistor (IGBT) designed for high-efficiency and fast-switching applications. Key features include:
1. Voltage and Current Rating: It typically supports a collector-emitter voltage of 1200V and a continuous collector current of 60A, making it suitable for high-power applications.
2. Low Saturation Voltage: The low VCE(sat) ensures reduced power loss and improved efficiency.
3. Fast Switching Performance: Designed to offer rapid switching speeds to minimize switching losses in energy-intensive applications.
4. Ruggedness and Reliability: Enhanced with features for robust performance under demanding conditions.
5. Tailored for Inverter Applications: Ideal for use in motor drives, induction heating, and other industrial applications requiring power conversion.
6. Package Type: Comes in a TO-247 package, providing a compact form factor with good thermal performance.
These features make the IRGP30B120KD-EP an excellent choice for applications needing efficient power handling and reliability.
1. Voltage and Current Rating: It typically supports a collector-emitter voltage of 1200V and a continuous collector current of 60A, making it suitable for high-power applications.
2. Low Saturation Voltage: The low VCE(sat) ensures reduced power loss and improved efficiency.
3. Fast Switching Performance: Designed to offer rapid switching speeds to minimize switching losses in energy-intensive applications.
4. Ruggedness and Reliability: Enhanced with features for robust performance under demanding conditions.
5. Tailored for Inverter Applications: Ideal for use in motor drives, induction heating, and other industrial applications requiring power conversion.
6. Package Type: Comes in a TO-247 package, providing a compact form factor with good thermal performance.
These features make the IRGP30B120KD-EP an excellent choice for applications needing efficient power handling and reliability.
Pinout
The IRGP30B120KD-EP is an Insulated Gate Bipolar Transistor (IGBT). It typically comes in a TO-247 package. The TO-247 package is known for having three pins. The pin configuration and functions for an IGBT like the IRGP30B120KD-EP are:
1. Collector (Pin 1): This is the main current-carrying terminal that collects carriers injected from the emitter.
2. Gate (Pin 2): This pin is the control terminal. A voltage applied to the gate controls the IGBT's operation, allowing current to flow from the collector to the emitter.
3. Emitter (Pin 3): This is the terminal through which carriers are emitted into the collector.
These pins are used to facilitate the electrical connections necessary for the IGBT to function in various electronic circuits, primarily for switching and amplifying electrical power.
1. Collector (Pin 1): This is the main current-carrying terminal that collects carriers injected from the emitter.
2. Gate (Pin 2): This pin is the control terminal. A voltage applied to the gate controls the IGBT's operation, allowing current to flow from the collector to the emitter.
3. Emitter (Pin 3): This is the terminal through which carriers are emitted into the collector.
These pins are used to facilitate the electrical connections necessary for the IGBT to function in various electronic circuits, primarily for switching and amplifying electrical power.
Manufacturer
The IRGP30B120KD-EP is manufactured by Infineon Technologies. Infineon is a German semiconductor company known for designing and manufacturing a wide range of semiconductor solutions. It operates in various sectors, including automotive, industrial power control, power management, security, and IoT applications. Infineon is recognized for its expertise in power semiconductors, microcontrollers, sensors, and security products, making it a key player in the electronics industry.
Application
The IRGP30B120KD-EP is a high-speed, rugged IGBT (Insulated Gate Bipolar Transistor) module commonly used in applications requiring efficient power switching. Its primary application areas include motor drives, such as those in industrial automation and electric vehicles, where it helps control and convert electrical power. It is also utilized in renewable energy systems like solar inverters and wind turbines to enhance energy conversion efficiency. Additionally, the IRGP30B120KD-EP is used in power supplies and uninterruptible power supplies (UPS) for ensuring stable power delivery, as well as in welding equipment and induction heating systems, where rapid and reliable power switching is essential.
Package
The IRGP30B120KD-EP is an Insulated Gate Bipolar Transistor (IGBT) with a TO-247 package type.
