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IRL520NPBF
+BOMMOSFET N-CH 100V 10A TO220AB
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRL520NPBF
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데이터시트 IRL520NPBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 180mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 440 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
개요
Description
The device comes in a TO-220 package, which is widely used for its effective heat dissipation properties. With a continuous drain current rating of about 9.2A and a drain-source voltage of 100V, the IRL520NPBF can be utilized in both consumer electronics and industrial applications. Additionally, its low gate charge enhances efficiency by reducing the power required to switch the device on and off. Overall, the IRL520NPBF is a versatile component well-suited for various power electronics applications.
Equivalent
1. STP36NF06 by STMicroelectronics
2. FQP27N06 by ON Semiconductor (formerly Fairchild Semiconductor)
3. IRFZ44N by Infineon Technologies
4. FDP6030BL by ON Semiconductor
These alternatives offer similar voltage, current ratings, and characteristics, making them suitable replacements in most applications. Always verify specific requirements such as package type and maximum ratings before substituting.
Features
1. N-Channel MOSFET: This component is an N-channel enhancement mode field-effect transistor.
2. Low On-Resistance: It offers low R_DS(on), contributing to efficient power usage and minimal power loss.
3. Continuous Drain Current: Can handle a continuous current of up to 9.2A at 25°C.
4. High Voltage Rating: Has a drain-source voltage rating (V_DS) of 100V.
5. Fast Switching: Provides quick switching speeds, making it suitable for high-speed applications.
6. Logic Level Gate Drive: Compatible with logic-level gate drive signals, simplifying interface requirements.
7. TO-220 Package: Comes in a TO-220 package, providing good thermal performance and easy mounting.
8. Applications: Commonly used in applications like motor drivers, power supplies, inverters, and various switching applications.
9. RoHS Compliant: Ensures compliance with environmental standards by being free of hazardous substances.
These features make the IRL520NPBF a versatile component for various power management and switching circuits.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, it allows current to flow from the drain to the source.
2. Drain (D): The current flows into the MOSFET through this pin. It is one of the main current-carrying terminals.
3. Source (S): The current flows out of the MOSFET through this pin. It is the other main current-carrying terminal.
The IRL520NPBF is used for switching and amplifying electronic signals in various applications. It is designed to handle a maximum continuous drain current of approximately 9.2A and a maximum drain-source voltage of 100V.
Manufacturer
Application
1. Motor Control: It is utilized in controlling DC motors in robotics and automation systems.
2. Power Switching: Suitable for switching power supplies and converters due to its low on-resistance.
3. LED Drivers: Used in driving and dimming high-power LEDs.
4. Amplifiers: Functions in audio and RF amplifiers for signal boosting.
5. Relay Replacement: Acts as a solid-state relay in switching applications.
6. Battery Management: Used in charging circuits and battery protection systems.
These applications leverage the MOSFET’s fast switching speeds and efficient power handling.