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IRLML6302TRPBF
+BOMMOSFET P-CH 20V 780MA SOT23
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRLML6302TRPBF
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데이터시트 IRLML6302TRPBF DataSheet
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사양
| 속성 | 가치 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRLML6302 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 780mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 610mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.45 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 15 V |
| Power Dissipation (Max) | 540mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
This MOSFET is part of the Power MOSFET family, known for handling higher power levels, and it often finds use in DC-DC converters, power supplies, and motor control circuits. The IRLML6302TRPBF is packaged in a small SOT-23 form factor, making it suitable for compact circuit designs where space is limited. Key performance characteristics include a drain-source voltage (V_DS) and a continuous drain current (I_D), which you should evaluate to ensure compatibility with your application requirements. Its efficiency and reliability make it a popular choice for engineers looking to optimize power performance in modern electronic devices.
Equivalent
1. Si2302 by Vishay
2. BSN20 by Nexperia
3. 2N7002 by ON Semiconductor
These components have similar voltage and current ratings, but always verify datasheets to ensure compatibility for your specific application.
Features
1. N-Channel MOSFET: It is a logic-level N-channel MOSFET.
2. Voltage and Current Ratings: The device typically supports a maximum drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 3.6A.
3. Low On-Resistance: It features a low on-resistance (R_ds(on)) which reduces power loss and enhances efficiency.
4. Compact Package: The MOSFET is packaged in a small SOT-23 package, making it suitable for space-constrained applications.
5. High-Speed Switching: The IRLML6302TRPBF supports fast switching speeds, which is advantageous in high-efficiency power conversion applications.
6. Thermal Resistance: It offers excellent thermal performance, which aids in effective heat dissipation.
7. Logic Level Gate Drive: Compatible with logic level gate drive, allowing it to be driven directly from microcontrollers.
These features make the IRLML6302TRPBF suitable for applications in power management, consumer electronics, and other low-power switching applications.
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate controls the current flow between the drain and source.
2. Source (S): The source is the terminal through which the charge carriers enter the MOSFET. In N-channel MOSFETs like the IRLML6302TRPBF, this is typically connected to the ground or lower potential.
3. Drain (D): This is the terminal through which the charge carriers exit the MOSFET. The current flow between the drain and the source is controlled by the voltage applied to the gate.
This MOSFET is typically used for low voltage, high-speed switching applications due to its low on-resistance and fast switching characteristics.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and voltage regulation to improve energy efficiency.
2. Switching Circuits: Ideal for high-speed switching applications in consumer electronics.
3. Motor Control: Used in low-voltage motor drivers for precise control.
4. Load Switching: Suitable for battery-operated devices and portable electronics for efficient load management.
5. LED Lighting: Helps in controlling LED brightness and power efficiently.
Its small package and low on-resistance make it suitable for space-constrained applications.
Package
Frequently Asked Questions
Q: What is the maximum drain current for the IRLML6302TRPBF at 25°C?
A: The continuous drain current (Id) is rated at 780mA (Ta) at 25°C ambient temperature.
Q: What is the typical on-resistance (Rds(on)) for this P-Channel MOSFET?
A: Maximum Rds(on) is 600mOhm at a gate drive of 4.5V and drain current of 610mA.
Q: Can this device be driven by a 2.5V logic-level signal?
A: Yes, it supports drive voltages as low as 2.7V (min Rds(on)), suitable for low-voltage logic.
Q: What is the package type of this Infineon HEXFET?
A: It is housed in a surface-mount Micro3/SOT-23 package, ideal for compact PCB designs.
Q: What is the maximum power dissipation for this component?
A: The maximum power dissipation is 540mW (Ta) at ambient temperature.
Q: What is the operating temperature range of this MOSFET?
A: It operates reliably from -55°C to +150°C (TJ), suitable for harsh environments.