IRLML6302TRPBF

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IRLML6302TRPBF

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MOSFET P-CH 20V 780MA SOT23

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사양

속성 가치
Series HEXFET®
Part Status Obsolete
Base Product Number IRLML6302
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 780mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.6 nC @ 4.45 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 15 V
Power Dissipation (Max) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

개요

Description

The IRLML6302TRPBF is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications. Manufactured by Infineon Technologies, it is typically used in power management and switching applications due to its low on-resistance and high efficiency. The "TRPBF" suffix indicates that it is a lead-free component, aligning with environmental and safety regulations such as RoHS (Restriction of Hazardous Substances).
This MOSFET is part of the Power MOSFET family, known for handling higher power levels, and it often finds use in DC-DC converters, power supplies, and motor control circuits. The IRLML6302TRPBF is packaged in a small SOT-23 form factor, making it suitable for compact circuit designs where space is limited. Key performance characteristics include a drain-source voltage (V_DS) and a continuous drain current (I_D), which you should evaluate to ensure compatibility with your application requirements. Its efficiency and reliability make it a popular choice for engineers looking to optimize power performance in modern electronic devices.

Equivalent

The IRLML6302TRPBF is a N-channel MOSFET produced by Infineon Technologies. Equivalent products may include:
1. Si2302 by Vishay
2. BSN20 by Nexperia
3. 2N7002 by ON Semiconductor
These components have similar voltage and current ratings, but always verify datasheets to ensure compatibility for your specific application.

Features

The IRLML6302TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in low-voltage applications. Here are its key features:
1. N-Channel MOSFET: It is a logic-level N-channel MOSFET.
2. Voltage and Current Ratings: The device typically supports a maximum drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 3.6A.
3. Low On-Resistance: It features a low on-resistance (R_ds(on)) which reduces power loss and enhances efficiency.
4. Compact Package: The MOSFET is packaged in a small SOT-23 package, making it suitable for space-constrained applications.
5. High-Speed Switching: The IRLML6302TRPBF supports fast switching speeds, which is advantageous in high-efficiency power conversion applications.
6. Thermal Resistance: It offers excellent thermal performance, which aids in effective heat dissipation.
7. Logic Level Gate Drive: Compatible with logic level gate drive, allowing it to be driven directly from microcontrollers.
These features make the IRLML6302TRPBF suitable for applications in power management, consumer electronics, and other low-power switching applications.

Pinout

The IRLML6302TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching applications. It is a part of Vishay's line of power MOSFETs and comes in a SOT-23 package. The device has a pin count of three. The functions of these pins are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate controls the current flow between the drain and source.
2. Source (S): The source is the terminal through which the charge carriers enter the MOSFET. In N-channel MOSFETs like the IRLML6302TRPBF, this is typically connected to the ground or lower potential.
3. Drain (D): This is the terminal through which the charge carriers exit the MOSFET. The current flow between the drain and the source is controlled by the voltage applied to the gate.
This MOSFET is typically used for low voltage, high-speed switching applications due to its low on-resistance and fast switching characteristics.

Manufacturer

The IRLML6302TRPBF is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor company that focuses on designing, manufacturing, and supplying a wide range of semiconductor solutions. Their products include microcontrollers, sensors, power semiconductors, and security solutions, among others. The company's offerings are crucial in various industries, including automotive, industrial, consumer electronics, and communications. Infineon's technologies are integral to the advancement and efficiency of smart technologies and energy management, making them a key player in the semiconductor industry.

Application

The IRLML6302TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various applications due to its compact size and high efficiency. Key application areas include:
1. Power Management: Utilized in DC-DC converters and voltage regulation to improve energy efficiency.
2. Switching Circuits: Ideal for high-speed switching applications in consumer electronics.
3. Motor Control: Used in low-voltage motor drivers for precise control.
4. Load Switching: Suitable for battery-operated devices and portable electronics for efficient load management.
5. LED Lighting: Helps in controlling LED brightness and power efficiently.
Its small package and low on-resistance make it suitable for space-constrained applications.

Package

The IRLML6302TRPBF is packaged in a Surface-Mount Device (SMD) form known as SOT-23, which is a small outline transistor package commonly used for housing transistors and diodes.

Frequently Asked Questions


Q: What is the maximum drain current for the IRLML6302TRPBF at 25°C?
A: The continuous drain current (Id) is rated at 780mA (Ta) at 25°C ambient temperature.


Q: What is the typical on-resistance (Rds(on)) for this P-Channel MOSFET?
A: Maximum Rds(on) is 600mOhm at a gate drive of 4.5V and drain current of 610mA.


Q: Can this device be driven by a 2.5V logic-level signal?
A: Yes, it supports drive voltages as low as 2.7V (min Rds(on)), suitable for low-voltage logic.


Q: What is the package type of this Infineon HEXFET?
A: It is housed in a surface-mount Micro3/SOT-23 package, ideal for compact PCB designs.


Q: What is the maximum power dissipation for this component?
A: The maximum power dissipation is 540mW (Ta) at ambient temperature.


Q: What is the operating temperature range of this MOSFET?
A: It operates reliably from -55°C to +150°C (TJ), suitable for harsh environments.


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