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IS25LP016D-JNLE-TR
+BOMIC FLASH 16MBIT SPI/QUAD 8SOIC
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제조업체통합 실리콘 솔루션 회사
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제조업체 부품 #IS25LP016D-JNLE-TR
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재고9737
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사양
| 속성 | 가치 |
| Part Status | Active |
| Digi Key Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 16Mbit |
| Memory Organization | 2M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Write Cycle Time - Word, Page | 800µs |
| Voltage - Supply | 2.3V ~ 3.6V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | IS25LP016 |
| Clock Frequency | 133 MHz |
개요
Description
Key features include a standard SPI interface for easy integration, Uniform 4KB sectors, and support for Dual and Quad I/O operations, which enhance data transfer speeds. It operates at a wide voltage range, typically from 2.3V to 3.6V, making it suitable for a variety of low-power applications. The device also supports advanced security features such as block protection and a hardware-based write protection mechanism to ensure data integrity.
The IS25LP016D-JNLE-TR is often used in consumer electronics, industrial automation, and other applications requiring reliable flash memory storage. Its compact package and high-temperature tolerance make it versatile for different operating environments.
Equivalent
1. MX25L1606E by Macronix
2. W25Q16JV by Winbond
3. S25FL116K by Cypress (Infineon)
4. AT25SF161 by Adesto (Dialog Semiconductor)
5. 25Q16EUX by GigaDevice
These alternatives offer similar capacities and interfaces suitable for applications requiring reliable, non-volatile memory storage. Always verify voltage, temperature ranges, and package compatibility when considering replacements.
Features
1. Memory Capacity: 16Mb organized in a flexible sector and block architecture.
2. Interface: Supports a Quad-SPI interface, enabling fast data transfer rates.
3. Performance: High-speed read operations with a frequency up to 133 MHz and a low latency of 8 clock cycles.
4. Low Power Consumption: Offers deep power-down mode and standby mode to conserve power.
5. Erase and Write Capabilities: Provides sector and block erase options, page programming, and allows for up to 100,000 write/erase cycles.
6. Wide Voltage Range: Operates over a voltage range of 2.25V to 3.6V.
7. Data Retention: Guarantees data retention for up to 20 years.
8. Package: Available in a compact WSON-8 package, making it suitable for space-constrained applications.
These features make it ideal for use in consumer electronics, industrial, and automotive applications requiring reliable and efficient non-volatile memory.
Pinout
1. CS# (Chip Select): Activates the device when pulled low.
2. SO (Serial Output): Used to transfer data out of the chip.
3. WP# (Write Protect): Protects certain memory areas from being overwritten when pulled low.
4. VSS (Ground): Ground reference for the power supply.
5. SI (Serial Input): Used for inputting data and commands.
6. SCK (Serial Clock): Provides the timing for data transfer.
7. HOLD#: Pauses the operation without losing the current state when pulled low.
8. VCC (Supply Voltage): Powers the chip.
This memory chip supports features like dual and quad SPI, fast read/write operations, and low power consumption, making it suitable for a variety of applications.