사양
| 속성 | 가치 |
| Supplier | ISSI, Integrated Silicon Solution Inc |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
IS43DR86400E-25DBL is a DRAM memory device from ISSI (Integrated Silicon Solution, Inc.). It belongs to the IS43DR86400 family and is used as volatile system memory in electronics. Like other DRAMs, it stores data in capacitor-based cells and requires periodic refresh, with a memory controller issuing RAS/CAS/WE-style commands. The string “-25” indicates a speed grade in the naming, while “E” and “DBL” reflect product revision and packaging/configuration per ISSI conventions.
Typical applications include embedded systems, consumer electronics, and other devices needing compact memory blocks.
For exact specifications—memory density and organization (bits/word, banks), voltage, timing parameters, and package dimensions—refer to the official ISSI datasheet for IS43DR86400E-25DBL.
Typical applications include embedded systems, consumer electronics, and other devices needing compact memory blocks.
For exact specifications—memory density and organization (bits/word, banks), voltage, timing parameters, and package dimensions—refer to the official ISSI datasheet for IS43DR86400E-25DBL.
Equivalent
To give accurate equivalents for IS43DR86400E-25DBL, I need exact specs. Please confirm:
- memory type (DDR/LPDDR)
- density/width (e.g., 64M×4, 64M×8)
- speed grade (‑25), voltage, and package
With these, I can provide cross‑references from ISSI and matches from Micron, Hynix, Winbond, Nanya.
- memory type (DDR/LPDDR)
- density/width (e.g., 64M×4, 64M×8)
- speed grade (‑25), voltage, and package
With these, I can provide cross‑references from ISSI and matches from Micron, Hynix, Winbond, Nanya.
Features
I don’t have the exact datasheet on hand. Here are typical features you’d expect from the IS43DR86400E-25DBL family (high-density ISSI SDRAM) based on the part number pattern:
- Type/organization: Synchronous DRAM (SDRAM), commonly 64M × 8 per device (512 Mb total), multi-bank
- Speed grade: -25 (about 25 ns cycle time, compatible with roughly 40–50 MHz operation depending on timing)
- Voltage: I/O domain around 2.5 V (typical), with standard SDRAM support
- Burst: programmable burst lengths (BL2/BL4/BL8) with sequential burst mode
- Refresh: auto-refresh with option for power-down/self-refresh modes
- Features: auto precharge on read/write, multiple banks, page-mode access, standard SDRAM timing parameters (tRCD, tRP, tRAS, etc.)
Notes:
- Exact organization, voltage tolerances, and timing values can vary by revision and package. For precise specs, please share the datasheet or a link, and I’ll extract the exact figures.
- Type/organization: Synchronous DRAM (SDRAM), commonly 64M × 8 per device (512 Mb total), multi-bank
- Speed grade: -25 (about 25 ns cycle time, compatible with roughly 40–50 MHz operation depending on timing)
- Voltage: I/O domain around 2.5 V (typical), with standard SDRAM support
- Burst: programmable burst lengths (BL2/BL4/BL8) with sequential burst mode
- Refresh: auto-refresh with option for power-down/self-refresh modes
- Features: auto precharge on read/write, multiple banks, page-mode access, standard SDRAM timing parameters (tRCD, tRP, tRAS, etc.)
Notes:
- Exact organization, voltage tolerances, and timing values can vary by revision and package. For precise specs, please share the datasheet or a link, and I’ll extract the exact figures.
Pinout
Pin count depends on the package option for IS43DR86400E-25DBL. In common ISSI packaging, this device is a synchronous DRAM (DDR SDRAM) used as system memory. Typical packages are 68-pin TSOP II or 84-pin TSOP II/BGA, but please specify the package to get the exact pin count from the datasheet.
Manufacturer
- Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
- What kind of company: A US-based fabless semiconductor company that designs and markets memory ICs, specializing in DRAM and flash memory solutions.
- What kind of company: A US-based fabless semiconductor company that designs and markets memory ICs, specializing in DRAM and flash memory solutions.
Application
Application areas: general-purpose DRAM for system memory in desktops, notebooks, and servers; graphics cards and multimedia devices; networking equipment (routers, switches, modems); embedded and industrial applications (industrial PCs, control systems); and consumer electronics (set-top boxes, digital TVs, DVD players).
Package
Leadless FBGA (Fine-PBGA) package, typically a 60-ball layout.
