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IS46LQ32256A-062BLA2
+BOMIC DRAM 8GBIT LVSTL 200TFBGA
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제조업체통합 실리콘 솔루션 회사
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제조업체 부품 #IS46LQ32256A-062BLA2
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사양
| 속성 | 가치 |
| Part Status | Active |
| Base Product Number | IS46LQ32256 |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 8Gbit |
| Memory Organization | 256M x 32 |
| Memory Interface | LVSTL |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Packaging | Bulk |
| Access Time | 3.5 ns |
| Grade | Automotive |
| Qualification | AEC-Q100 |
개요
Description
Key points:
- Organization: 32K x 8 bits.
- Technology: volatile SRAM (needs power to retain data).
- Interface: typically a parallel SRAM interface (address pins, data I/O, and control signals like CS/CE, OE, WE); ISSI also offers SPI variants, so verify the exact interface in the datasheet.
- Power: generally low-voltage operation (check exact Vcc range on the datasheet; common ranges include ~2.7–3.6 V).
- Applications: buffers, caches, frame buffers, registers, and other data-storage needs in microcontroller/m FPGA-based designs.
- Verification: refer to the official ISSI datasheet for precise timing, voltage, package, and pinout details.
For precise specs and pinout, consult the IS46LQ32256A-062BLA2 datasheet.
Pinout
Function: 32K × 8 bit static RAM (256 Kbit) with asynchronous operation. It provides 8‑bit bidirectional data I/O, address inputs A0–A14, and control pins such as Chip Enable (CE#), Output Enable (OE#), and Write Enable (WE#). Power and ground pins are Vcc and GND.
Manufacturer
Application
- Embedded microcontrollers/SoCs for data RAM and LUT storage
- Buffers and caches in digital systems
- Video/graphics frame buffers for small displays
- DSP data buffers and real-time data logging
- Networking/telecom line cards for fast packet data storage
- Automotive and consumer electronics needing compact, fast SRAM memory