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ISC027N10NM6
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제조업체인피니티 테크놀로지
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제조업체 부품 #ISC027N10NM6
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재고6200
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사양
| 속성 | 가치 |
| Manufacturer | Infineon Technologies |
| Package | PG-TDSON-8 FL |
개요
Description
The ISC027N10NM6 is a 100V N-channel MOSFET from Infineon Technologies, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 2.7mΩ, reducing conduction losses.
- High Current Handling: Up to 270A (pulsed), suitable for demanding loads.
- Optimized for Switching: Fast switching performance, ideal for DC-DC converters, motor drives, and power supplies.
- Robust Packaging: Housed in a TO-263-7 (D2PAK-7) package for improved thermal dissipation.
This MOSFET is commonly used in automotive, industrial, and renewable energy systems where efficiency and reliability are critical. Its low gate charge (Qg) ensures minimal switching losses, enhancing overall system performance.
For detailed specifications, refer to Infineon’s datasheet.
- Low On-Resistance (RDS(on)): Typically 2.7mΩ, reducing conduction losses.
- High Current Handling: Up to 270A (pulsed), suitable for demanding loads.
- Optimized for Switching: Fast switching performance, ideal for DC-DC converters, motor drives, and power supplies.
- Robust Packaging: Housed in a TO-263-7 (D2PAK-7) package for improved thermal dissipation.
This MOSFET is commonly used in automotive, industrial, and renewable energy systems where efficiency and reliability are critical. Its low gate charge (Qg) ensures minimal switching losses, enhancing overall system performance.
For detailed specifications, refer to Infineon’s datasheet.
Equivalent
Equivalent products to the ISC027N10NM6 (100V N-channel MOSFET) include:
- IRF3205 (55V, but similar specs)
- STP80NF55-06 (55V)
- FDP8878 (80V)
- IRLB8748PbF (75V)
- AOT240L (100V)
Check datasheets for exact compatibility in your application.
- IRF3205 (55V, but similar specs)
- STP80NF55-06 (55V)
- FDP8878 (80V)
- IRLB8748PbF (75V)
- AOT240L (100V)
Check datasheets for exact compatibility in your application.
Features
The ISC027N10NM6 is a 100V N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 27A (continuous)
- Low On-Resistance (RDS(on)): 27mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~2-4V)
- Robust Design: Avalanche energy rated for reliability
- Package: TO-252 (DPAK), surface-mount for compact designs
Ideal for power switching, motor control, and DC-DC converters.
- Voltage Rating: 100V
- Current Rating: 27A (continuous)
- Low On-Resistance (RDS(on)): 27mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~2-4V)
- Robust Design: Avalanche energy rated for reliability
- Package: TO-252 (DPAK), surface-mount for compact designs
Ideal for power switching, motor control, and DC-DC converters.
Pinout
The ISC027N10NM6 is a N-channel MOSFET with the following key specifications:
- Pin Count: 8 (PowerSSO-8 package)
- Function: High-efficiency power switching in applications like DC-DC converters, motor control, and power management.
- Key Parameters:
- Voltage Rating: 100V
- Current Rating: 27A (continuous)
- Low RDS(on): 19mΩ (max) @ VGS=10V
- Fast switching with low gate charge (Qg).
Pins include Gate (G), Drain (D), and Source (S), arranged for optimal thermal and electrical performance.
- Pin Count: 8 (PowerSSO-8 package)
- Function: High-efficiency power switching in applications like DC-DC converters, motor control, and power management.
- Key Parameters:
- Voltage Rating: 100V
- Current Rating: 27A (continuous)
- Low RDS(on): 19mΩ (max) @ VGS=10V
- Fast switching with low gate charge (Qg).
Pins include Gate (G), Drain (D), and Source (S), arranged for optimal thermal and electrical performance.
