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IXBH42N170
+BOMIGBT 1700V 80A TO-247AD
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제조업체IXYS 회사
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제조업체 부품 #IXBH42N170
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재고4228
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사양
| 속성 | 가치 |
| Series | BIMOSFET™ |
| Part Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector (Ic) (Max) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A |
| Power - Max | 360 W |
| Input Type | Standard |
| Gate Charge | 188 nC |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD |
| Base Product Number | IXBH42 |
| Current - Collector Pulsed (Icm) | 300 A |
| Reverse Recovery Time (trr) | 1.32 µs |
개요
Description
The device offers fast switching speeds, which enhances efficiency in high-frequency operations. Its robust construction ensures reliability in demanding environments. Additionally, the IXBH42N170 is often used in circuit designs that necessitate high voltage and current handling while maintaining thermal stability.
Overall, this MOSFET is ideal for engineers looking to optimize power performance and reliability in their designs.
Equivalent
Features
1. Voltage Rating: 170V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: 42A continuous drain current, enabling robust performance in demanding environments.
3. Low RDS(on): Offers a low on-resistance (typically around 0.14 ohms), resulting in efficient power conversion and reduced heat generation.
4. Fast Switching Speed: Capable of rapid turn-on and turn-off times, facilitating high-frequency operations.
5. Thermal Performance: Designed with a high thermal conductivity package, enhancing heat dissipation.
6. Gate-Source Voltage: Rated for ±20V, providing flexibility in driving configurations.
7. Applications: Ideal for use in DC-DC converters, power supplies, and motor control circuits.
Overall, the IXBH42N170 is a versatile component, offering reliability and efficiency in power electronics systems.
Pinout
1. Gate (G): This pin controls the MOSFET's switching behavior. A voltage applied here turns the device on or off.
2. Drain (D): This pin is connected to the load and allows current to flow from the drain to the source when the device is on.
3. Source (S): This pin is connected to the ground or negative voltage in the circuit. It serves as the reference point for the gate-to-source voltage.
The IXBH42N170 is rated for a maximum drain-source voltage (V_DS) of 170V and can handle continuous drain currents up to 42A, making it suitable for switching applications in power electronics.
Manufacturer
IXYS is known for its innovation and expertise in power management technology, serving markets that require efficient energy conversion and control. The IXBH42N170 is a high-voltage, high-current MOSFET designed for applications that demand robust performance, such as switch-mode power supplies and motor drives. As a key player in the semiconductor industry, IXYS emphasizes quality and reliability in its products, catering to engineers and manufacturers seeking advanced solutions in power electronics.
Application
1. Switching Power Supplies: Used in DC-DC converters and power management circuits.
2. Motor Control: Suitable for driving brushless DC (BLDC) motors in industrial and automotive applications.
3. Inverters: Employed in solar inverters and UPS systems for efficient power conversion.
4. High-Frequency Applications: Ideal for RF amplifiers and signal switching due to low gate charge and fast switching speeds.
5. LED Drivers: Utilized in lighting solutions for efficient power delivery.
Overall, it excels in applications requiring high efficiency and thermal performance.