사양
| 속성 | 가치 |
| Package | Tube |
| Series | HiPerFET™, Ultra X2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 52mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 4mA |
| GateCharge(Qg)(Max)@Vgs | 107 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 6180 pF @ 25 V |
| PowerDissipation(Max) | 780W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
개요
Description
The IXFH60N65X2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Manufactured by IXYS, it features advanced technology that provides low on-resistance and high-speed switching capabilities. This N-channel MOSFET is capable of handling high voltages and currents, making it suitable for demanding applications such as power supplies, motor drives, and converters.
Key specifications include a maximum drain-source voltage (V_ds) of 650V, a continuous drain current (I_d) of 60A, and a low gate charge, which contributes to its efficient performance. The device is packaged in a TO-247 case, facilitating easy mounting and good heat dissipation. Its robust design ensures reliability and durability in various industrial and commercial environments.
Overall, the IXFH60N65X2 is an ideal choice for engineers seeking a reliable MOSFET with high energy efficiency and performance in applications requiring high power handling and fast switching.
Key specifications include a maximum drain-source voltage (V_ds) of 650V, a continuous drain current (I_d) of 60A, and a low gate charge, which contributes to its efficient performance. The device is packaged in a TO-247 case, facilitating easy mounting and good heat dissipation. Its robust design ensures reliability and durability in various industrial and commercial environments.
Overall, the IXFH60N65X2 is an ideal choice for engineers seeking a reliable MOSFET with high energy efficiency and performance in applications requiring high power handling and fast switching.
Equivalent
The IXFH60N65X2 is a N-channel MOSFET from IXYS. Equivalent products include:
1. Infineon Technologies' IPW60R045CP.
2. STMicroelectronics' STW62N65M5.
3. ON Semiconductor's NTP65N065SC1.
4. Vishay's SiHG65N60E.
These components are similar in terms of voltage and current ratings, making them potential substitutes, but exact compatibility should be verified based on specific application requirements.
1. Infineon Technologies' IPW60R045CP.
2. STMicroelectronics' STW62N65M5.
3. ON Semiconductor's NTP65N065SC1.
4. Vishay's SiHG65N60E.
These components are similar in terms of voltage and current ratings, making them potential substitutes, but exact compatibility should be verified based on specific application requirements.
Features
The IXFH60N65X2 is a power MOSFET designed for high-efficiency and high-speed applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (Vds) of up to 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (Id) of 60A, suitable for applications requiring high current.
3. Low On-Resistance: It features low on-resistance (Rds(on)), which reduces conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, enhancing performance in applications like power supplies and converters.
5. Thermal Performance: The device is housed in a TO-247 package, which helps dissipate heat effectively, improving thermal performance.
6. Ruggedness: It is designed to withstand high-energy pulses in demanding environments.
7. Applications: Commonly used in power supply, motor control, and other high-power applications.
This combination of features makes the IXFH60N65X2 suitable for various demanding power and industrial applications.
1. Voltage Rating: It has a drain-source voltage (Vds) of up to 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (Id) of 60A, suitable for applications requiring high current.
3. Low On-Resistance: It features low on-resistance (Rds(on)), which reduces conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, enhancing performance in applications like power supplies and converters.
5. Thermal Performance: The device is housed in a TO-247 package, which helps dissipate heat effectively, improving thermal performance.
6. Ruggedness: It is designed to withstand high-energy pulses in demanding environments.
7. Applications: Commonly used in power supply, motor control, and other high-power applications.
This combination of features makes the IXFH60N65X2 suitable for various demanding power and industrial applications.
Pinout
The IXFH60N65X2 is a power MOSFET, specifically an N-channel MOSFET, produced by IXYS Corporation. It is designed for high-power applications. This particular MOSFET comes in a TO-247 package, which is known to have three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing or preventing current flow between the drain and source.
2. Drain (D): This is where the load current enters the MOSFET. The drain is one end of the main current-carrying channel when the MOSFET is in the 'on' state.
3. Source (S): This pin is the other end of the main current-carrying channel. The source is typically connected to ground in many circuit configurations for N-channel MOSFETs.
The IXFH60N65X2 is used in applications requiring efficient high-speed switching, such as power supplies, motor drives, and other power management systems.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing or preventing current flow between the drain and source.
2. Drain (D): This is where the load current enters the MOSFET. The drain is one end of the main current-carrying channel when the MOSFET is in the 'on' state.
3. Source (S): This pin is the other end of the main current-carrying channel. The source is typically connected to ground in many circuit configurations for N-channel MOSFETs.
The IXFH60N65X2 is used in applications requiring efficient high-speed switching, such as power supplies, motor drives, and other power management systems.
Manufacturer
The IXFH60N65X2 is manufactured by IXYS Corporation. IXYS is a company that specializes in the development, manufacturing, and marketing of power semiconductors and integrated circuits. They are known for producing high-performance semiconductor products that are used in a variety of applications, including power conversion, motor control, and renewable energy systems. IXYS was acquired by Littelfuse, Inc. in 2018, which is a global manufacturer of electronic components and subsystems. Littelfuse's acquisition of IXYS expanded its portfolio in the semiconductor and power electronics markets.
Application
The IXFH60N65X2 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with applications in various fields due to its high-voltage and high-current capabilities. It is commonly used in:
1. Power Supply Systems: For efficient power conversion and distribution, particularly in switch-mode power supplies (SMPS).
2. Motor Drives: Used in motor control applications for industrial and consumer electronics.
3. Inverters: Essential in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
4. Lighting Systems: Employed in LED lighting drivers and ballast circuits.
5. Automotive Electronics: Used in electric vehicle (EV) systems and other vehicular power management applications.
These applications benefit from the MOSFET's efficiency, reliability, and thermal performance.
1. Power Supply Systems: For efficient power conversion and distribution, particularly in switch-mode power supplies (SMPS).
2. Motor Drives: Used in motor control applications for industrial and consumer electronics.
3. Inverters: Essential in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
4. Lighting Systems: Employed in LED lighting drivers and ballast circuits.
5. Automotive Electronics: Used in electric vehicle (EV) systems and other vehicular power management applications.
These applications benefit from the MOSFET's efficiency, reliability, and thermal performance.
Package
The IXFH60N65X2 is packaged in a TO-247 form factor. This package type is commonly used for high-power components like transistors and MOSFETs, providing robust mechanical support and effective heat dissipation.
