IXFH80N65X2W

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IXFH80N65X2W

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  • 제조업체 부품 #IXFH80N65X2W

  • 재고7393

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Brand Littelfuse
Packaging Tube
Factory Pack Quantity:Factory Pack Quantity 30

개요

Description

The IXFH80N65X2W is a high-performance N-channel MOSFET designed for applications requiring efficient power switching. With a voltage rating of 650V and a continuous current capability of 80A, it is suitable for use in various power electronics, including DC-DC converters, inverters, and motor drives. This MOSFET features a low on-resistance, which reduces power losses and enhances thermal performance, making it ideal for high-efficiency designs.
Key specifications include a maximum gate-source voltage of ±20V, a maximum junction temperature of 175°C, and a fast switching speed that contributes to improved overall system efficiency. The IXFH80N65X2W is typically housed in a TO-247 package, allowing for effective heat dissipation.
Overall, this MOSFET is a reliable choice for engineers looking for robust and efficient solutions in high-voltage and high-current applications, ensuring optimal performance while minimizing energy losses.

Equivalent

The IXFH80N65X2W is an N-channel MOSFET with a voltage rating of 650V and a current rating of 80A. Equivalent products include the Infineon IPP80R650P6, STMicroelectronics STP80NF65, and ON Semiconductor NTP80N65. When selecting an equivalent, ensure similar voltage, current ratings, Rds(on), and switching characteristics to ensure compatibility with your application.

Features

The IXFH80N65X2W is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: 650V, allowing it to handle high-voltage applications.
2. Current Rating: 80A continuous drain current, suitable for demanding tasks.
3. RDS(on): Low on-resistance (0.18 ohm), which minimizes power loss and improves efficiency.
4. Gate Charge (Qg): Low gate charge for faster switching speeds, enabling better performance in high-frequency applications.
5. Thermal Resistance: Designed with good thermal management properties, supporting reliable operation at elevated temperatures.
6. Package Type: Available in a TO-247 package, facilitating easy heat dissipation and PCB mounting.
These features make the IXFH80N65X2W ideal for use in power supplies, motor drives, and other demanding electronic circuits where efficiency and reliability are critical.

Pinout

The IXFH80N65X2W is a high-voltage N-channel MOSFET manufactured by IXYS. It features a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The IXFH80N65X2W is designed for high-efficiency applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 80A, making it suitable for power management and switching applications.

Manufacturer

The IXFH80N65X2W is a power MOSFET manufactured by IXYS Corporation, which is part of the Littelfuse family. IXYS, founded in 1983, specializes in high-performance semiconductor solutions and is particularly known for its expertise in power management and conversion technologies. The company develops a wide range of products, including power MOSFETs, IGBTs, diodes, and specialized integrated circuits, catering to various industries such as automotive, telecommunications, and renewable energy.
Littelfuse acquired IXYS in 2018 to enhance its semiconductor portfolio, focusing on high-efficiency and energy-saving solutions. IXYS’s products are utilized in applications requiring robust performance, such as switching power supplies, motor drives, and power electronics in renewable energy systems. The company emphasizes innovation and reliability in its technology, positioning itself as a key player in the semiconductor market.

Application

The IXFH80N65X2W is a high-voltage MOSFET primarily used in power electronics applications. Key application areas include:
1. Power Supplies: Suitable for switch-mode power supplies (SMPS) and converters.
2. Motor Drives: Used in industrial motor control and electric vehicle (EV) applications.
3. Inverters: Applied in renewable energy systems like solar inverters and wind energy converters.
4. HVAC Systems: Utilized in heating, ventilation, and air conditioning systems for efficient power management.
5. Consumer Electronics: Employed in various consumer devices that require efficient power conversion.
Its high voltage and current ratings make it suitable for a range of demanding applications.

Package

The IXFH80N65X2W is packaged in a TO-247 form factor. This package type is commonly used for high-power applications, providing good thermal performance and sufficient spacing for high-voltage applications.

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