IXFN360N15T2

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IXFN360N15T2

+BOM

MOSFET N-CH 150V 310A SOT227B

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Series HiPerFET™, TrenchT2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 310A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 715 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 47500 pF @ 25 V
Power Dissipation (Max) 1070W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN360

개요

Description

The IXFN360N15T2 is a high-performance N-channel MOSFET designed for various power applications. With a voltage rating of 150V and a continuous drain current of 360A, it is suitable for high-efficiency switching and power management tasks. This MOSFET features low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, enhancing overall efficiency.
Key applications include power supplies, motor control, and automotive systems. It is often utilized in circuits where fast switching and high current capacity are critical. The device is packaged in a TO-220 format, allowing for effective thermal management and easy mounting.
Additionally, the IXFN360N15T2 is characterized by its robust construction, making it reliable for demanding environments. Its specifications make it an excellent choice for engineers looking to optimize performance in power electronics designs. For detailed datasheet information, including thermal and electrical characteristics, it's recommended to refer to the manufacturer's documentation.

Equivalent

The IXFN360N15T2 is an N-channel MOSFET with a voltage rating of 150V and a current rating of 360A. Equivalent products include the IRF3205, STP360N15, and FQD360N15. Always verify specifications such as RDS(on), gate threshold voltage, and thermal characteristics when considering alternatives.

Features

The IXFN360N15T2 is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 150V drain-source voltage (Vds), suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 360A continuous drain current (Id), making it ideal for power management.
3. Low Rds(on): Offers a low on-resistance of approximately 0.018 ohms, ensuring high efficiency and reduced heat generation during operation.
4. Fast Switching: Enhanced switching speed suitable for applications in power conversion and motor control.
5. Thermal Performance: Robust thermal management capabilities with a high junction temperature rating, which enhances reliability.
6. Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the IXFN360N15T2 particularly suitable for use in power supplies, inverters, and electric vehicle applications, where efficiency and reliability are crucial.

Pinout

The IXFN360N15T2 is an N-channel MOSFET transistor from IXYS. It features a pin count of 3, typically configured as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This pin is the output where the load is connected. It is the path through which the current flows when the device is on.
3. Source (S): This pin is connected to the ground or the negative side of the load. It completes the circuit with the drain.
The IXFN360N15T2 is designed for high-performance applications, with a maximum continuous drain current of 360A and a drain-source voltage rating of 150V. This makes it suitable for various power management and switching applications.

Manufacturer

The IXFN360N15T2 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS is known for designing and producing semiconductor devices, particularly in the areas of power management and signal processing. The company specializes in products such as power MOSFETs, IGBTs, rectifiers, and other high-power and high-frequency components used in various applications, including renewable energy, industrial, automotive, and consumer electronics.
Founded in 1983, IXYS has a strong reputation for innovation in power semiconductor technology, focusing on efficiency and reliability. The IXFN360N15T2 is a power MOSFET that is utilized in applications requiring high efficiency and low on-resistance, making it suitable for power supply circuits, motor drives, and other demanding electronic systems. As part of Littelfuse, IXYS continues to expand its offerings in the power semiconductor market, enhancing its capabilities in the integration of advanced technologies for a wide range of applications.

Application

The IXFN360N15T2 is an N-channel MOSFET with high voltage and current handling capabilities, making it suitable for various applications. Key areas include:
1. Power Electronics: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Drives: Employed in industrial motor control applications for driving electric motors.
3. Switching Applications: Ideal for high-speed switching in power management circuits.
4. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
5. Automotive: Applied in electric vehicles for power management and control systems.
Overall, its robustness and efficiency enhance performance in demanding environments.

Package

The IXFN360N15T2 is packaged in a TO-247 format. This package type is designed for high-power applications, offering excellent thermal performance and ease of mounting for heat dissipation.

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