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IXFP26N50P3
+BOMMOSFET N-CH 500V 26A TO220AB
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제조업체IXYS 회사
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제조업체 부품 #IXFP26N50P3
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사양
| 속성 | 가치 |
| Package / Case | Tube |
| Series | HiPerFET™, Polar3™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 26A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 230mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 4mA |
| Gate Charge(Qg)(Max) @ Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2220 pF @ 25 V |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
개요
Description
- Voltage Rating: 500V
- Current Rating: 26A (continuous)
- Low On-Resistance (RDS(on)): 0.23Ω (typ.)
- Fast Switching: Optimized for high-speed performance
- Package: TO-247 (robust thermal performance)
It is commonly used in power supplies, inverters, motor drives, and industrial applications where high voltage and efficiency are critical. The device offers low conduction losses and reliable performance under demanding conditions.
For detailed specifications, refer to the datasheet.
Equivalent
- IRFP450 (500V, 14A) – Lower current but similar voltage.
- STP26NM50N (500V, 26A) – Comparable specs from STMicroelectronics.
- FDP26N50 (500V, 26A) – Fairchild alternative.
- IXFH26N50P (500V, 26A) – Similar IXYS part.
Check datasheets for exact compatibility in your circuit.
Features
- High Voltage Rating: 500V drain-source voltage (VDSS).
- Current Handling: 26A continuous drain current (ID).
- Low On-Resistance: 0.19Ω (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Avalanche Energy Rated: Enhanced ruggedness for inductive loads.
- Low Gate Charge (Qg): Improves switching efficiency.
- TO-247 Package: Robust thermal performance for power applications.
Ideal for switching power supplies, motor drives, and inverters.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to the load).
3. Source (S) – Common return path for current.
Key specifications:
- Voltage Rating: 500V
- Current Rating: 26A
- Power Dissipation: 500W
- Low On-Resistance (RDS(on)): ~0.23Ω
Designed for high-power switching applications like power supplies and motor drives.
Manufacturer
IXYS (now part of Littelfuse after its acquisition in 2017) specializes in power management, industrial, and automotive applications. The company focuses on robust, high-voltage, and high-efficiency components, including MOSFETs, IGBTs, and thyristors.
The IXFP26N50P3 is a 500V, 26A N-channel MOSFET, designed for switching applications requiring high reliability and efficiency.
Key Points:
- Manufacturer: IXYS (Littelfuse)
- Type: Power semiconductor company
- Product: High-voltage MOSFET
- Applications: Power supplies, motor control, industrial systems.
Application
- Switched-Mode Power Supplies (SMPS) – Efficient power conversion in AC/DC and DC/DC systems.
- Motor Control – Used in inverters and drives for industrial and automotive systems.
- High-Voltage Power Amplifiers – Suitable for RF and audio amplification.
- Inductive Load Switching – Reliable performance in solenoids and relays.
- Renewable Energy Systems – Solar inverters and wind power converters.
Its 500V drain-source voltage and low on-resistance make it ideal for high-efficiency, high-power designs.