IXYP60N65A5

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IXYP60N65A5

+BOM

IGBT 650V 60A X5 XPT TO-220

  • 제조업체IXYS 회사

  • 제조업체 부품 #IXYP60N65A5

  • 패키지 TO-220-3

  • 재고7422

365 1일 품질 보증

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사양

속성 가치
Package / Case Tube
Series XPT™, GenX5™
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown(Max) 650 V
Current - Collector(Ic)(Max) 134 A
Current - Collector Pulsed(Icm) 260 A
Vce(on)(Max) @ Vge Ic 1.35V @ 15V, 36A
Power - Max 395 W
Switching Energy 600µJ (on), 1.45mJ (off)
Input Type Standard
Gate Charge 128 nC
Td(on / off) @ 25°C 28ns/230ns
Test Condition 400V, 36A, 5Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

개요

Pinout

The IXYP60N65A5 is a 650V, 60A N-channel IGBT with an integrated anti-parallel diode, housed in a TO-247 package.
Pin Count: 3 pins (standard TO-247 configuration).
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage/current terminal (connects to load).
3. Emitter (E) – Ground/return path (includes diode cathode).
Key Features:
- Voltage Rating: 650V
- Current Rating: 60A
- Integrated Diode: Simplifies reverse current handling.
- Low VCE(sat): Enhances efficiency.
Commonly used in motor drives, inverters, and power converters.

Application

The IXYP60N65A5 is a high-voltage MOSFET commonly used in:
1. Power Supplies – Switch-mode (SMPS), inverters, and PFC circuits.
2. Motor Drives – Industrial and automotive motor control systems.
3. Renewable Energy – Solar inverters and wind power converters.
4. Induction Heating – High-efficiency resonant converters.
5. Welding Equipment – High-current, high-voltage applications.
Its 650V/60A rating and low on-resistance make it suitable for high-power, high-frequency switching.

Package

The IXYP60N65A5 is a high-voltage N-channel MOSFET typically available in a TO-247 package. This package is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It offers excellent thermal performance due to its large size and metal tab for heat dissipation.

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