K4B4G0846E-BMMA

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K4B4G0846E-BMMA

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사양

속성 가치
Manufacturer Samsung
Package / Case FBGA-78

개요

Description

The K4B4G0846E-BMMA is a 4Gb (512MB) DDR3 SDRAM chip from Samsung, designed for high-speed, low-power applications.
Key Features:
- Capacity: 4Gb (organized as 512M x 8)
- Speed: Up to 1866 Mbps (DDR3-1866)
- Voltage: 1.35V (Low Power, DDR3L)
- Package: 78-ball FBGA
- Applications: Mobile devices, embedded systems, and power-efficient computing.
It supports auto-refresh, self-refresh, and programmable burst lengths, making it suitable for performance-critical yet energy-conscious designs.
For detailed specs, refer to Samsung’s datasheet.

Equivalent

The K4B4G0846E-BMMA is a 4Gb DDR3 SDRAM chip from Samsung. Equivalent alternatives include:
- H5TC4G83AFR-PBA (SK Hynix)
- MT41K512M4DA-107:A (Micron)
- IS43TR16256A-125KBL (ISSI)
These are 4Gb (512Mx8) DDR3 chips with similar specs (speed, voltage, density). Verify pin compatibility and timing parameters for exact replacements.

Application

The K4B4G0846E-BMMA is a 4Gb (512MB) DDR3 SDRAM chip from Samsung. Its primary application areas include:
- Consumer Electronics: Smart TVs, set-top boxes, gaming consoles.
- Computing: Laptops, desktops, servers, and embedded systems.
- Networking: Routers, switches, and communication equipment.
- Industrial: Automation, medical devices, and IoT applications.
- Automotive: Infotainment and ADAS systems (with extended temp. variants).
It offers low power consumption, high speed (up to 1866 Mbps), and reliability, making it suitable for performance-driven and power-sensitive applications.

Package

The K4B4G0846E-BMMA is a 4Gb (512Mx8) DDR3 SDRAM chip in a 78-ball FBGA (Fine-pitch Ball Grid Array) package. It operates at 1.5V and is commonly used in memory modules for computing and embedded systems. The FBGA package ensures compact size and efficient thermal performance.

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