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K4B4G1646E-BCNB

Name: K4B4G1646E-BCNB
Rating: 4.8 (15 reviews)

+BOM

4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS

제조업체삼성
제조업체 부품 #K4B4G1646E-BCNB
데이터시트 K4B4G1646E-BCNB DataSheet
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사양

속성	가치
Packaging	FBGA-96
Clock Frequency	1.066GHz
Current - Supply	120mA
Memory Format	DDR3 SDRAM
Memory Size	4Gbit
Operating temperature	0℃~+95℃
Refresh Current	2mA
Voltage - Supply	1.425V~1.575V

개요

Description

K4B4G1646E-BCNB refers to a specific model of DRAM (Dynamic Random-Access Memory) module produced by Samsung. It is part of the DDR4 SDRAM series, which offers improved performance over its predecessors, such as DDR3, by providing faster data transfer rates, higher capacities, and improved energy efficiency. The model name breaks down as follows: "K4B4G" signifies a 4-gigabit capacity per integrated circuit, and the subsequent numbers and letters typically denote specific attributes related to speed, voltage, and package type.
This DRAM module is often used in computers and servers to enhance system performance by allowing for the rapid access and temporary storage of data that the CPU frequently uses. As a DDR4 module, it offers benefits like reduced power consumption compared to older generations due to its lower operating voltage, which can be crucial for energy efficiency in large-scale data centers or high-performance computing environments. Moreover, its architecture supports increased bandwidth, making it suitable for applications requiring fast data processing and multitasking capabilities.

Equivalent

The K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM chip from Samsung. Equivalent products would include DDR3 SDRAM chips from other manufacturers with similar specifications, such as:
1. Hynix H5TQ4G63AFR-PBC
2. Micron MT41J256M16HA-125
3. Kingston KVR16N11/4
4. Nanya NT5CB256M16BP-DI
These equivalents must match key specifications such as capacity, speed, and form factor to be considered suitable replacements.

Features

The K4B4G1646E-BCNB is a DRAM chip from Samsung, part of their DDR3 SDRAM lineup. It features a 4Gb (gigabit) capacity organized in a 256M x 16-bit configuration. The chip supports a variety of data rates, commonly including 1066 Mbps, 1333 Mbps, 1600 Mbps, or higher, depending on the specific model and configuration. It operates at a voltage of 1.5V, which is typical for DDR3 memory. The chip is designed for high-performance applications, offering efficient power usage and reliable performance in a range of computing devices, from personal computers to servers. It also includes error correction features, such as ECC (Error-Correcting Code), to enhance data integrity and reliability. The package type is often FBGA (Fine-Pitch Ball Grid Array), which helps in efficient heat dissipation and compact design. This chip is suitable for applications that require robust memory solutions with moderate power consumption and high data transfer rates.

Pinout

The K4B4G1646E-BCNB is a DDR3 SDRAM memory chip manufactured by Samsung. It has a pin count of 96. This chip is organized as 16M x 16 bits x 8 banks, providing a total capacity of 4 gigabits (512 megabytes).
The functions of the pins include:
- Power and Ground Pins: VDD, VDDQ, VSS, and VSSQ for power supply and grounding.
- Command and Address Pins: These include pins like A[0:13] for address input, BA[0:2] for bank address, and control pins such as RAS#, CAS#, and WE# for command inputs.
- Data Pins: DQ[0:15] for bi-directional data input/output.
- Data Strobe Pins: DQS[0:1] and DQS#[0:1] for data strobe signals, both true and complementary.
- Clock Pins: CK and CK# for differential clock inputs.
- Other Control Pins: Such as CKE (Clock Enable), ODT (On-Die Termination), and CS# (Chip Select).
The K4B4G1646E-BCNB is used in applications requiring high-speed data processing and is commonly found in computers, servers, and other electronic devices requiring dynamic memory.

Manufacturer

The K4B4G1646E-BCNB is a memory chip manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known for its diverse business operations, but it is particularly prominent in the technology sector. Samsung Electronics, a subsidiary of Samsung Group, is one of the world's largest producers of electronic devices, including semiconductors, consumer electronics, and telecommunications equipment.
As a leading company in the semiconductor industry, Samsung Electronics develops and manufactures various types of memory products, including DRAM, NAND flash, and solid-state drives (SSDs). The company is renowned for its innovation, extensive research and development, and significant contributions to the advancement of electronic and digital technologies. Samsung's products are widely used in a range of applications, from consumer electronics such as smartphones and tablets to industrial and enterprise-level computing systems.

Application

The K4B4G1646E-BCNB is a DRAM memory chip, specifically a 4Gb DDR3L SDRAM, commonly used in applications requiring efficient memory solutions. Its application areas include:
1. Computing Devices: Used in PCs, laptops, and servers to provide high-speed data access and multitasking capabilities.
2. Consumer Electronics: Integrated into gaming consoles, smart TVs, and digital cameras for enhanced performance.
3. Networking Equipment: Utilized in routers and switches for improved data processing and network efficiency.
4. Embedded Systems: Employed in industrial automation and automotive systems requiring robust memory solutions.
5. Mobile Devices: Found in smartphones and tablets where power efficiency and performance are critical.

Package

The K4B4G1646E-BCNB is a DRAM chip from Samsung, typically housed in a FBGA (Fine-Pitch Ball Grid Array) package. This package type allows for a high-density, compact design suitable for various electronic applications.

Frequently Asked Questions

Q: What is the memory density and configuration of K4B4G1646E-BCNB?
A: It is a 4Gbit DDR3 SDRAM organized as 256M x16, via FBGA-96 package.

Q: Can this IC operate at 1.066GHz clock frequency without stability issues?
A: Yes, it supports 1.066GHz (DDR3-2133) data rate; ensure proper power decoupling and layout for stable operation.

Q: What is the recommended VDD and VDDQ supply voltage range?
A: It requires 1.425V to 1.575V, typically 1.5V, compatible with standard DDR3 power rails.

Q: Does this part support commercial or industrial temperature ranges?
A: It supports 0℃ to +95℃ operating temperature, suitable for commercial and some extended temperature applications.

Q: What is the typical active current consumption?
A: Typical supply current is 120mA per device; refresh current is 2mA, ensuring low power during self-refresh.

Q: Is K4B4G1646E-BCNB compatible with standard DDR3 memory controllers?
A: Yes, it complies with DDR3 SDRAM standard, fully compatible with JEDEC DDR3-2133 controllers.

Q: What package type does this component use?
A: It is supplied in FBGA-96 (Fine-pitch Ball Grid Array) package, suitable for high-density PCB assembly.