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K9F1G08U0D-SCB0
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제조업체삼성 모터
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제조업체 부품 #K9F1G08U0D-SCB0
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재고5035
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사양
| 속성 | 가치 |
| Manufacturer | Samsung Electro-Mechanics |
| Package / Case | TSOPI-48 |
개요
Description
- Organization: 128M x 8-bit (1Gb)
- Interface: 8-bit I/O with asynchronous operation
- Voltage: 3.3V supply
- Page Size: 2KB + 64B spare (for ECC)
- Block Size: 128KB (64 pages per block)
- Endurance: ~100K program/erase cycles
- Packaging: 48-pin TSOP1
It supports on-chip ECC, block protection, and sequential read/write operations, making it suitable for consumer electronics, industrial devices, and storage applications.
Key commands include Page Program, Block Erase, and Read Operations, accessible via standard NAND protocols.
For detailed specs, refer to the Samsung datasheet.
Equivalent
- TC58NVG0S3HTA00 (Toshiba)
- MT29F1G08ABAEA (Micron)
- W29N01GVSIAA (Winbond)
- MX30LF1G08AA (Macronix)
These are 1Gb SLC NAND chips with similar voltage, organization, and interface. Verify pinout and timing compatibility for your design.
Features
- Interface: 8-bit I/O asynchronous NAND
- Organization: 128M x 8 bits (1Gb)
- Page Size: 2KB + 64B spare
- Block Size: 128KB (64 pages per block)
- Voltage Supply: 2.7V–3.6V
- Speed: 25ns (tRC/tWC) access time
- Endurance: 100K program/erase cycles per block
- Reliability: ECC (Error Correction Code) support
- Package: 48-pin TSOP1
- Operating Temp.: 0°C to 70°C
Designed for embedded storage, it supports sequential read/write and is commonly used in consumer electronics, industrial systems, and networking devices.
Pinout
- Pin Count: 48 pins (TSOP-48 package).
- Functions:
- I/O0-I/O7: Data input/output and command/address transfer.
- CLE: Command Latch Enable.
- ALE: Address Latch Enable.
- CE#: Chip Enable (active low).
- RE#: Read Enable (active low).
- WE#: Write Enable (active low).
- WP#: Write Protect (active low).
- R/B#: Ready/Busy status output.
- VCC/VSS: Power supply (3.3V) and ground.
It supports asynchronous operation and is commonly used in embedded storage applications.
Manufacturer
Samsung is a South Korean multinational conglomerate and a leading global producer of semiconductors, including memory chips like NAND flash, DRAM, and SSDs. The company is known for its advanced technology and high-volume production in the electronics industry.
This specific chip is part of Samsung's legacy NAND flash lineup, commonly used in embedded systems, consumer electronics, and industrial applications.
Application
1. Consumer Electronics – Digital cameras, MP3 players, USB drives.
2. Embedded Systems – IoT devices, industrial controllers.
3. Data Storage – SSDs, memory cards, RAID systems.
4. Automotive – Infotainment, telematics, firmware storage.
5. Networking – Routers, switches for firmware/log storage.
It offers 1Gb (128MB) capacity, 3.3V operation, and 8-bit I/O interface, making it suitable for cost-effective, low-power storage solutions.
Package
Frequently Asked Questions
Q: What is the storage capacity and organization of the K9F1G08U0D-SCB0?
A: It is a 1Gbit NAND Flash memory, organized as 128M x 8 bits, suitable for high-density data storage.
Q: What package type does this part use?
A: It comes in a TSOPI-48 package, which is a standard lead-free thin small outline package for memory ICs.
Q: What is the typical operating voltage range for this NAND Flash?
A: Standard NAND Flash like this operates at 2.7V to 3.6V for core and I/O, ideal for low-power embedded designs.
Q: Is this component suitable for solid-state drives or embedded systems?
A: Yes, it is designed for consumer and industrial NAND applications, including SSDs, set-top boxes, and networking equipment.
Q: Does the K9F1G08U0D-SCB0 support page read and program operations?
A: Yes, it supports typical NAND commands: page read (2K bytes) and page program, with block erase for efficient data management.
Q: Are there any known compatibility issues with standard NAND controllers?
A: No, it follows the standard NAND Flash interface, compatible with most common NAND controllers using ONFI or toggle mode.
