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KGF75N65KDF-U/H
+BOM-
제조업체KEC 반도체
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제조업체 부품 #KGF75N65KDF-U/H
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재고17302
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사양
| 속성 | 가치 |
| Manufacturer | KEC Semicon |
| Package / Case | TO-247 |
개요
Description
The KGF75N65KDF-U/H is a high-performance 650V, 75A IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for power electronics applications.
### Key Features:
- Voltage & Current Rating: 650V collector-emitter voltage (VCES), 75A continuous current (IC).
- Low Saturation Voltage (VCE(sat)): ~1.55V (typ.), reducing conduction losses.
- Fast Switching: Optimized for efficiency in high-frequency circuits.
- Robust Design: High short-circuit withstand capability (10µs).
- Temperature Range: Operates up to 175°C (Tj).
### Applications:
- Motor drives, UPS, solar inverters, and industrial power supplies.
### Package:
- TO-247-4 (4-pin) with Kelvin emitter for improved switching performance.
This IGBT combines low losses, high reliability, and thermal stability, making it suitable for demanding power conversion systems.
### Key Features:
- Voltage & Current Rating: 650V collector-emitter voltage (VCES), 75A continuous current (IC).
- Low Saturation Voltage (VCE(sat)): ~1.55V (typ.), reducing conduction losses.
- Fast Switching: Optimized for efficiency in high-frequency circuits.
- Robust Design: High short-circuit withstand capability (10µs).
- Temperature Range: Operates up to 175°C (Tj).
### Applications:
- Motor drives, UPS, solar inverters, and industrial power supplies.
### Package:
- TO-247-4 (4-pin) with Kelvin emitter for improved switching performance.
This IGBT combines low losses, high reliability, and thermal stability, making it suitable for demanding power conversion systems.
Pinout
The KGF75N65KDF-U/H is a 3-pin IGBT (Insulated Gate Bipolar Transistor) module with the following pin functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Ground/reference terminal.
Key features:
- Voltage rating: 650V
- Current rating: 75A
- Low VCE(sat) for efficient switching.
- Fast switching for power applications like motor drives and inverters.
Package: Typically TO-247 or similar, but confirm datasheet for exact mechanical details.
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Ground/reference terminal.
Key features:
- Voltage rating: 650V
- Current rating: 75A
- Low VCE(sat) for efficient switching.
- Fast switching for power applications like motor drives and inverters.
Package: Typically TO-247 or similar, but confirm datasheet for exact mechanical details.
Package
The KGF75N65KDF-U/H is a TO-247 packaged IGBT (Insulated Gate Bipolar Transistor) from Infineon. It features a 650V voltage rating and 75A current rating, optimized for high-efficiency power switching applications. The package is robust, with three leads and a metal tab for heat dissipation, making it suitable for industrial and automotive uses.
