LM5112SD/NOPB

LM5112SD/NOPB is TI’s dual high-speed MOSFET gate driver with independent high-side and low-side channels, intended to drive external N‑channel MOSFETs in half-bridge/topologies. It uses a bootstrap supply for the high-side and provides fast switching with push-pull outputs, plus protection features (e.g., undervoltage lockout and cross-conduction protection). Inputs are CMOS/TTL compatible, and outputs can source/sink substantial current to drive gates quickly. Typical applications include synchronous buck/boost converters, motor drivers, and other switching power stages requiring fast, reliable gate drive. The “SD” suffix denotes the package type, and “NOPB” indicates lead-free, RoHS-compliant packaging. For proper operation, you’ll need a bootstrap capacitor (and diode) for the high-side drive, and you should observe UVLO thresholds and appropriate dead-time. Always consult the latest TI datasheet for exact electrical specs, pinout, and operating conditions.

Here are the features of LM5112SD/NOPB (concise):
- Dual high-speed MOSFET gate drivers (high-side and low-side)
- Bootstrapped high-side drive (VB-VS) for N-channel half-bridge; external bootstrap diode and capacitor required
- Wide bus-voltage range for the high-side side; logic supply around 4.5–5.5 V
- Undervoltage lockout (UVLO) on both channels
- Enable/shutdown input to disable outputs
- Fault/diagnostic reporting output
- Shoot-through protection with dead-time control to prevent cross-conduction
- Overcurrent/short-circuit protection and thermal shutdown
- Fast gate-drive with high peak current capability
- Industrial temperature range (-40°C to 125°C)
- Pb-free, 8-pin SOIC (LM5112SD/NOPB) package
Note: External bootstrap diode/capacitor required for the high-side supply.

- Pin count: 8-pin package (SOIC-8, LM5112SD/NOPB)
- Function: Dual bootstrapped MOSFET gate driver (two independent channels). Provides HO (high-side) and LO (low-side) outputs driven from inputs IN1 and IN2, with a bootstrap supply (VB/VS) for high-side operation and VCC/GND logic supply. Used to drive N-channel MOSFETs in a half-bridge.

The LM5112SD/NOPB is manufactured by Texas Instruments (TI). TI is an American multinational semiconductor company that designs and manufactures analog, embedded processing, and digital signal processing integrated circuits.

LM5112SD/NOPB is a dual, high-speed MOSFET gate driver with bootstrap for high-side and low-side outputs. Typical applications:
- Drive N‑channel MOSFETs in switch‑mode power supplies (buck, boost, buck‑boost)
- Motor control front-ends (BLDC/ PMSM, stepper) using half-bridge or full-bridge configurations
- Synchronous rectification and active clamp circuits
- Class D/high‑efficiency power stages in audio and industrial amplifiers
- Automotive/industrial power electronics requiring fast, robust gate drive for high-voltage systems

LM5112SD/NOPB comes in an 8-pin SOIC (RoHS-compliant) package.