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M29W128GL7AZS6F
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제조업체마이크로미터
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제조업체 부품 #M29W128GL7AZS6F
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사양
| 속성 | 가치 |
| Brand | Micron |
| ProductType | NOR Flash |
| Subcategory | Memory & Data Storage |
| Series | M29W |
| MountingStyle | SMD/SMT |
| InterfaceType | Parallel |
| MinimumOperatingTemperature | - 40 C |
| MaximumOperatingTemperature | + 85 C |
| SupplyVoltage-Min | 2.7 V |
| SupplyVoltage-Max | 3.6 V |
| MemorySize | 128 Mbit |
| Package/Case | FBGA-64 |
| Organization | 16 M x 8/8 M x 16 |
| Packaging | Reel |
| ActiveReadCurrent-Max | 10 mA |
| FactoryPackQuantity:FactoryPackQuantity | 1800 |
| ShippingRestrictions | Mouser does not presently sell this product in your region. |
| DataBusWidth | 8 bit/16 bit |
| Speed | 70 ns |
| TimingType | Asynchronous |
| MemoryType | NOR |
| Standard | Common Flash Interface (CFI) |
| Type | Boot Block |
개요
Description
Key features include:
- Fast read speed (up to 70ns access time).
- Multiple memory blocks for efficient data management.
- Sector erase capability, allowing selective data erasure.
- High endurance, with up to 100,000 program/erase cycles.
- It supports advanced write protection features for data security.
The device is available in various packages, facilitating integration into diverse electronic designs. The M29W128GL7AZS6F is ideal for firmware storage, code execution, and applications requiring reliable non-volatile memory solutions.
Equivalent
1. S29GL128N - from Spansion (now part of Cypress)
2. W29N01GV - from Winbond
3. BA29DL128 - from Samsung
4. AM29LV128B - from AMD
Always verify compatibility in terms of voltage, timing, and package type before replacement.
Features
- Memory Architecture: It utilizes a NAND Flash architecture, providing efficient storage and high-density memory solutions.
- Voltage Range: Operates with a voltage supply of 2.7V to 3.6V, making it suitable for low-power applications.
- Read/Write Speed: Supports fast read speeds, typically up to 25 ns, with page programming speeds of around 200 µs.
- Data Retention: Offers a data retention period of up to 20 years, ensuring long-term data integrity.
- Endurance: Rated for at least 10,000 program/erase cycles, suitable for applications with frequent write operations.
- Interface: Supports asynchronous access for read operations, making it compatible with various microcontrollers and processors.
- Package Type: Available in a TSOP (Thin Small Outline Package) for compact designs.
Overall, the M29W128GL7AZS6F is designed for reliable performance in embedded systems, consumer electronics, and other applications requiring efficient Flash memory.
Pinout
The primary functions of the pins include:
- Address Pins (A0 - A16): Used to select memory locations.
- Data Pins (DQ0 - DQ7): 8-bit data bus for data input and output.
- Control Pins:
- CE# (Chip Enable): Activates the memory chip.
- OE# (Output Enable): Enables output drivers to read data.
- WE# (Write Enable): Controls write operations.
- Vcc: Power supply pin.
- Vss: Ground pin.
- WP# (Write Protect): Prevents writing to the memory.
- RESET#: Resets the memory device.
This device is commonly used in applications requiring non-volatile storage, such as firmware and configuration data.
Manufacturer
Application
1. Consumer Electronics: Firmware storage in devices like smartphones, tablets, and smart TVs.
2. Automotive: Storing software for infotainment systems and electronic control units (ECUs).
3. Industrial Equipment: Used in programmable logic controllers (PLCs) and automation systems for firmware and configuration data.
4. Networking Devices: Firmware storage in routers and switches.
5. Medical Devices: Data storage in diagnostic and monitoring equipment.
Overall, it serves applications requiring non-volatile memory with reprogrammable capabilities.