MBT3946DW1T1G

이미지는 참조용입니다.

MBT3946DW1T1G

+BOM

TRAN NPN/PNP 40V 0.2A SC88/SC70

  • 제조업체온세미

  • 제조업체 부품 #MBT3946DW1T1G

  • 패키지 SC-70

  • 재고3530

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Active
Transistor Type NPN, PNP
Current - Collector(Ic)(Max) 200mA
Voltage - Collector Emitter Breakdown(Max) 40V
Vce Saturation(Max) @ Ib Ic 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 10mA, 1V
Power - Max 150mW
Frequency - Transition 300MHz, 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

개요

Description

The MBT3946DW1T1G is a dual NPN/PNP bipolar junction transistor (BJT) in a compact SOT-363 package, designed for high-speed switching and amplification. Key features include:
- Configuration: Dual complementary transistors (NPN + PNP).
- Voltage Rating: 40V (collector-emitter).
- Current Handling: 200mA (continuous collector current).
- Low Saturation Voltage: Enhances efficiency in switching.
- High Current Gain (hFE): Ensures good amplification.
- Package: SOT-363 (space-saving for compact designs).
Applications:
- Signal amplification in audio/RF circuits.
- High-speed switching (e.g., logic interfaces, drivers).
- Portable electronics due to small footprint.
Ideal for low-power, high-frequency designs requiring matched transistor pairs. Check datasheets for detailed specs.

Equivalent

Equivalent products to the MBT3946DW1T1G (dual NPN/PNP transistor) include:
- BCM847DS (NXP)
- DTC143EUA (ROHM)
- MMBT3904DW1T1G (On Semiconductor)
- BAT54SDW1T1G (Diodes Inc.)
These are SOT-363 packaged dual transistors with similar NPN/PNP configurations. Verify specs (voltage, current, gain) for exact compatibility.

Features

The MBT3946DW1T1G is a dual NPN/PNP transistor in a SOT-363 package, designed for high-speed switching and amplification. Key features:
- Dual Configuration: Contains one NPN and one PNP transistor.
- High Current Gain (hFE): Typically 100-400 for NPN, 80-240 for PNP.
- Low Saturation Voltage: Ensures efficient switching.
- High Transition Frequency (fT): Up to 250 MHz for fast response.
- Low Power Dissipation: 200 mW per transistor.
- Compact Package: SOT-363 (6-pin) for space-saving designs.
Ideal for RF, audio, and signal processing applications.

Application

The MBT3946DW1T1G is a dual NPN/PNP transistor array commonly used in:
- Switching Circuits: High-speed switching in digital logic and power management.
- Amplification: Small-signal amplification in audio and RF applications.
- Interface Circuits: Level shifting and signal conditioning in communication systems.
- Automotive Electronics: Sensor interfaces and control modules.
- Consumer Electronics: Portable devices, displays, and power regulation.
Its compact SOT-363 package and matched transistor pairs make it ideal for space-constrained, high-efficiency designs.

Package

The MBT3946DW1T1G is a dual NPN/PNP resistor-equipped transistor (RET) in a SOT-363 (SC-88) surface-mount package. This small, 6-pin package is designed for high-density PCB applications, offering compact size and efficient performance.