사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | NPN, PNP |
| Current - Collector(Ic)(Max) | 200mA |
| Voltage - Collector Emitter Breakdown(Max) | 40V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 10mA, 1V |
| Power - Max | 150mW |
| Frequency - Transition | 300MHz, 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
The MBT3946DW1T1G is a dual NPN/PNP bipolar junction transistor (BJT) in a compact SOT-363 package, designed for high-speed switching and amplification. Key features include:
- Configuration: Dual complementary transistors (NPN + PNP).
- Voltage Rating: 40V (collector-emitter).
- Current Handling: 200mA (continuous collector current).
- Low Saturation Voltage: Enhances efficiency in switching.
- High Current Gain (hFE): Ensures good amplification.
- Package: SOT-363 (space-saving for compact designs).
Applications:
- Signal amplification in audio/RF circuits.
- High-speed switching (e.g., logic interfaces, drivers).
- Portable electronics due to small footprint.
Ideal for low-power, high-frequency designs requiring matched transistor pairs. Check datasheets for detailed specs.
- Configuration: Dual complementary transistors (NPN + PNP).
- Voltage Rating: 40V (collector-emitter).
- Current Handling: 200mA (continuous collector current).
- Low Saturation Voltage: Enhances efficiency in switching.
- High Current Gain (hFE): Ensures good amplification.
- Package: SOT-363 (space-saving for compact designs).
Applications:
- Signal amplification in audio/RF circuits.
- High-speed switching (e.g., logic interfaces, drivers).
- Portable electronics due to small footprint.
Ideal for low-power, high-frequency designs requiring matched transistor pairs. Check datasheets for detailed specs.
Equivalent
Equivalent products to the MBT3946DW1T1G (dual NPN/PNP transistor) include:
- BCM847DS (NXP)
- DTC143EUA (ROHM)
- MMBT3904DW1T1G (On Semiconductor)
- BAT54SDW1T1G (Diodes Inc.)
These are SOT-363 packaged dual transistors with similar NPN/PNP configurations. Verify specs (voltage, current, gain) for exact compatibility.
- BCM847DS (NXP)
- DTC143EUA (ROHM)
- MMBT3904DW1T1G (On Semiconductor)
- BAT54SDW1T1G (Diodes Inc.)
These are SOT-363 packaged dual transistors with similar NPN/PNP configurations. Verify specs (voltage, current, gain) for exact compatibility.
Features
The MBT3946DW1T1G is a dual NPN/PNP transistor in a SOT-363 package, designed for high-speed switching and amplification. Key features:
- Dual Configuration: Contains one NPN and one PNP transistor.
- High Current Gain (hFE): Typically 100-400 for NPN, 80-240 for PNP.
- Low Saturation Voltage: Ensures efficient switching.
- High Transition Frequency (fT): Up to 250 MHz for fast response.
- Low Power Dissipation: 200 mW per transistor.
- Compact Package: SOT-363 (6-pin) for space-saving designs.
Ideal for RF, audio, and signal processing applications.
- Dual Configuration: Contains one NPN and one PNP transistor.
- High Current Gain (hFE): Typically 100-400 for NPN, 80-240 for PNP.
- Low Saturation Voltage: Ensures efficient switching.
- High Transition Frequency (fT): Up to 250 MHz for fast response.
- Low Power Dissipation: 200 mW per transistor.
- Compact Package: SOT-363 (6-pin) for space-saving designs.
Ideal for RF, audio, and signal processing applications.
Application
The MBT3946DW1T1G is a dual NPN/PNP transistor array commonly used in:
- Switching Circuits: High-speed switching in digital logic and power management.
- Amplification: Small-signal amplification in audio and RF applications.
- Interface Circuits: Level shifting and signal conditioning in communication systems.
- Automotive Electronics: Sensor interfaces and control modules.
- Consumer Electronics: Portable devices, displays, and power regulation.
Its compact SOT-363 package and matched transistor pairs make it ideal for space-constrained, high-efficiency designs.
- Switching Circuits: High-speed switching in digital logic and power management.
- Amplification: Small-signal amplification in audio and RF applications.
- Interface Circuits: Level shifting and signal conditioning in communication systems.
- Automotive Electronics: Sensor interfaces and control modules.
- Consumer Electronics: Portable devices, displays, and power regulation.
Its compact SOT-363 package and matched transistor pairs make it ideal for space-constrained, high-efficiency designs.
Package
The MBT3946DW1T1G is a dual NPN/PNP resistor-equipped transistor (RET) in a SOT-363 (SC-88) surface-mount package. This small, 6-pin package is designed for high-density PCB applications, offering compact size and efficient performance.