이미지는 참조용입니다.
MJD2955T4G
+BOMTRANS PNP 60V 10A DPAK
-
제조업체온세미
-
제조업체 부품 #MJD2955T4G
-
데이터시트 MJD2955T4G DataSheet
-
패키지 TO-252-3
-
재고7661
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 10 A |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff(Max) | 50µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 20 @ 4A, 4V |
| Power - Max | 1.75 W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
For example, the "MJD2955" likely indicates a medium-power PNP bipolar junction transistor (BJT), commonly used for amplification and switching applications. The additional characters "T4G" could refer to specific manufacturing or packaging details, such as the reel size, environmental compliance, or other specifications particular to the manufacturer.
When dealing with such components, it’s crucial to refer to the manufacturer's datasheet for detailed information on electrical characteristics, thermal properties, pin configuration, and application guidelines to ensure proper usage in electronic circuit designs. If you require specific information, consulting the datasheet from the manufacturer's website or technical documentation would be recommended.
Equivalent
Features
1. Type: PNP Transistor
2. Maximum Ratings:
- Collector-Emitter Voltage (Vceo): -60V
- Collector-Base Voltage (Vcbo): -70V
- Emitter-Base Voltage (Vebo): -5V
- Collector Current (Ic): -10A
3. Power Dissipation: 75W
4. DC Current Gain (hFE): Typically around 20 to 100, depending on the operating conditions.
5. Package: Available in a TO-220 package, which is suitable for through-hole mounting and provides efficient heat dissipation.
6. Applications: Suitable for use in switching and amplifier circuits, motor control, and other industrial and consumer electronic applications.
This transistor is favored for its reliable performance in medium power operations, and the TO-220 package makes it easy to mount on heat sinks for improved thermal management.
Pinout
1. Emitter (E): The emitter is the source of carriers (electrons for NPN, holes for PNP) that the transistor injects into the base.
2. Base (B): The base terminal is used to control the transistor's operation. A small current or voltage applied to this pin allows a larger current to flow from the collector to the emitter.
3. Collector (C): The collector is the terminal through which the main current flows, controlled by the base current.
The MJD2955T4G is generally used for switching and amplification purposes, suitable for applications requiring medium power.
Manufacturer
Application
1. Power Amplification: Suitable for audio and RF power amplifiers.
2. Switching Applications: Used in switching circuits due to its fast response time.
3. Voltage Regulation: Helps in voltage regulation circuits for stabilizing power supply.
4. Motor Control: Utilized in controlling DC motors and actuators.
5. Signal Processing: Employed in signal processing circuits thanks to its low noise characteristics.
6. Relay Drivers: Acts as a relay driver in various circuits requiring high current load switching.
These applications leverage its robust performance, high current capacity, and reliability.