사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 200 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 40 V |
| VceSaturation(Max)@IbIc | 400mV @ 5mA, 50mA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 10mA, 1V |
| Power-Max | 300 mW |
| Frequency-Transition | 250MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
개요
Description
The MMBT3906LT1G is a general-purpose PNP bipolar junction transistor (BJT) commonly used in electronic circuits for switching and amplification applications. Manufactured by ON Semiconductor, this device is encapsulated in a small SOT-23 surface-mount package, making it suitable for compact circuit designs.
Key specifications include a collector-emitter voltage (V_CE) of 40V, a collector current (I_C) of 200mA, and a power dissipation of 625mW. It has a DC current gain (h_FE) ranging from 100 to 300, depending on the operating conditions, which makes it versatile for a variety of applications. The transistor operates efficiently in low-power conditions, contributing to its frequent use in portable and battery-operated devices.
The MMBT3906LT1G is often utilized in signal processing, as an amplifier in audio and radio frequency applications, and as a switch in digital circuits. Its reliability, coupled with its cost-effectiveness, makes it a popular choice for both hobbyists and professional engineers.
Key specifications include a collector-emitter voltage (V_CE) of 40V, a collector current (I_C) of 200mA, and a power dissipation of 625mW. It has a DC current gain (h_FE) ranging from 100 to 300, depending on the operating conditions, which makes it versatile for a variety of applications. The transistor operates efficiently in low-power conditions, contributing to its frequent use in portable and battery-operated devices.
The MMBT3906LT1G is often utilized in signal processing, as an amplifier in audio and radio frequency applications, and as a switch in digital circuits. Its reliability, coupled with its cost-effectiveness, makes it a popular choice for both hobbyists and professional engineers.
Equivalent
The MMBT3906LT1G is a PNP bipolar junction transistor. Equivalent products include the 2N3906, BC556, BC557, BC558, and PN3906. These transistors have similar electrical characteristics and can often be used interchangeably in circuits, though it's important to verify parameters for specific applications. Always check the datasheets for exact specifications and compatibility.
Features
The MMBT3906LT1G is a general-purpose PNP bipolar junction transistor (BJT) commonly used in switching and amplification applications. Key features include:
1. Polarity: PNP
2. Package: SOT-23, which is a small surface-mount package suitable for compact electronic designs.
3. Collector-Emitter Voltage (Vceo): Typically -40V, indicating the maximum voltage the transistor can handle between the collector and emitter when the base is open.
4. Collector Current (Ic): Maximum continuous current is -200mA.
5. Power Dissipation: Maximum is 625mW, indicating how much power the device can dissipate without exceeding its maximum junction temperature.
6. DC Current Gain (hFE): Typically ranges from 100 to 300, which influences the amplification capability.
7. Transition Frequency (fT): Around 250 MHz, suitable for high-frequency applications.
8. Operating Temperature Range: -55°C to +150°C, allowing use in various environments.
9. Compliance: Lead-free and RoHS compliant, making it environmentally friendly.
The MMBT3906LT1G is widely used due to its reliability and efficiency in low-power switching and amplification tasks.
1. Polarity: PNP
2. Package: SOT-23, which is a small surface-mount package suitable for compact electronic designs.
3. Collector-Emitter Voltage (Vceo): Typically -40V, indicating the maximum voltage the transistor can handle between the collector and emitter when the base is open.
4. Collector Current (Ic): Maximum continuous current is -200mA.
5. Power Dissipation: Maximum is 625mW, indicating how much power the device can dissipate without exceeding its maximum junction temperature.
6. DC Current Gain (hFE): Typically ranges from 100 to 300, which influences the amplification capability.
7. Transition Frequency (fT): Around 250 MHz, suitable for high-frequency applications.
8. Operating Temperature Range: -55°C to +150°C, allowing use in various environments.
9. Compliance: Lead-free and RoHS compliant, making it environmentally friendly.
The MMBT3906LT1G is widely used due to its reliability and efficiency in low-power switching and amplification tasks.
Pinout
The MMBT3906LT1G is a PNP bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching applications. It typically comes in a SOT-23 surface-mount package, which has three pins. The pin configuration for the MMBT3906LT1G is as follows:
1. Pin 1 (Emitter): The emitter is the terminal through which charge carriers exit the transistor. In a PNP transistor, the emitter current is directed outwards.
2. Pin 2 (Base): The base terminal controls the transistor's operation. A small current entering the base allows a larger current to flow from the emitter to the collector.
3. Pin 3 (Collector): The collector is the terminal through which the main current flows from the emitter, controlled by the base current.
The MMBT3906LT1G is widely used in low power and low to moderate frequency applications. Its SOT-23 package makes it suitable for compact electronic designs.
1. Pin 1 (Emitter): The emitter is the terminal through which charge carriers exit the transistor. In a PNP transistor, the emitter current is directed outwards.
2. Pin 2 (Base): The base terminal controls the transistor's operation. A small current entering the base allows a larger current to flow from the emitter to the collector.
3. Pin 3 (Collector): The collector is the terminal through which the main current flows from the emitter, controlled by the base current.
The MMBT3906LT1G is widely used in low power and low to moderate frequency applications. Its SOT-23 package makes it suitable for compact electronic designs.
Manufacturer
The MMBT3906LT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a multinational company specializing in semiconductor solutions. They design and supply a wide range of semiconductor components used in various applications, including automotive, industrial, cloud power, IoT, and consumer electronics. The company focuses on innovative solutions to enhance energy efficiency, drive smart power management, and advance sensor technologies.
Application
The MMBT3906LT1G is a PNP bipolar junction transistor commonly used in various electronic applications. Its primary application areas include:
1. Switching Circuits: Used for driving low-current loads in switching applications.
2. Amplification: Functions in small signal amplification circuits.
3. Signal Processing: Suitable for signal conditioning and processing tasks.
4. General-Purpose Amplifiers: Useful in amplifying low-power audio and radio frequency signals.
5. Digital and Analog Circuits: Incorporated in mixed-signal applications due to its versatility.
Its compact SOT-23 package makes it ideal for space-constrained designs in consumer electronics, automotive systems, and telecommunications devices.
1. Switching Circuits: Used for driving low-current loads in switching applications.
2. Amplification: Functions in small signal amplification circuits.
3. Signal Processing: Suitable for signal conditioning and processing tasks.
4. General-Purpose Amplifiers: Useful in amplifying low-power audio and radio frequency signals.
5. Digital and Analog Circuits: Incorporated in mixed-signal applications due to its versatility.
Its compact SOT-23 package makes it ideal for space-constrained designs in consumer electronics, automotive systems, and telecommunications devices.
Package
The MMBT3906LT1G is a PNP bipolar junction transistor that comes in a SOT-23 package. This package is a small, surface-mount transistor outline, ideal for compact electronic designs.
