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MMBT4401-7-F
+BOMTRANS NPN 40V 0.6A SOT23-3
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제조업체다이오즈(주)
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제조업체 부품 #MMBT4401-7-F
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데이터시트 MMBT4401-7-F DataSheet
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패키지 TO-236-3
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재고7879
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사양
| 속성 | 가치 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 1V |
| Power - Max | 310 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
This transistor is favored for its reliability and efficiency in low to medium power applications. It is widely used in consumer electronics, automotive systems, and industrial equipment for tasks such as signal amplification, switching, and interfacing. The MMBT4401-7-F is valued for its fast switching speed and low saturation voltage, which contribute to lower power loss and improved performance in electronic designs. Its versatility and cost-effectiveness make it a popular choice among engineers and hobbyists alike.
Equivalent
Features
1. Type: NPN Bipolar Junction Transistor.
2. Maximum Collector Current (Ic): 600 mA, allowing it to handle moderate current loads.
3. Maximum Collector-Emitter Voltage (Vceo): 40V, suitable for low to medium voltage applications.
4. Power Dissipation: 350 mW, indicating its ability to manage power loss in the form of heat.
5. DC Current Gain (hFE): Typically between 100 and 300, ensuring efficient amplification.
6. Package: SOT-23, a small surface-mount package that is ideal for compact circuit designs.
7. Transition Frequency (fT): Approximately 300 MHz, which is favorable for high-frequency applications.
8. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability in various environments.
These features make the MMBT4401-7-F suitable for use in a wide range of electronic applications, including signal processing, amplification, and switching tasks.
Pinout
1. Pin 1 - Emitter (E): The emitter is the region where charge carriers (electrons in the case of an NPN transistor) are emitted. It is typically connected to the ground in common-emitter configurations.
2. Pin 2 - Base (B): The base is the control terminal that modulates the conductivity of the transistor. A small current or voltage applied to the base controls a larger current between the collector and emitter.
3. Pin 3 - Collector (C): The collector is the region where charge carriers are collected. It is usually connected to the supply voltage in common-emitter configurations.
The MMBT4401-7-F is known for its high current gain and low saturation voltage, making it suitable for switching and amplification tasks in electronic circuits.