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TRANS PNP 150V 0.6A SOT23-3
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제조업체다이오즈(주)
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제조업체 부품 #MMBT5401-7-F
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데이터시트 MMBT5401-7-F DataSheet
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패키지 TO-236-3
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재고12204
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사양
| 속성 | 가치 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 150 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
Key specifications of the MMBT5401-7-F include a maximum collector-emitter voltage (Vce) of -150V, a maximum collector current (Ic) of -600mA, and a power dissipation of 350mW. It features a DC current gain (hFE) typically ranging from 30 to 240, making it suitable for various amplification tasks.
The transistor is housed in a standard SOT-23 package, which is a surface-mount device (SMD) package well-suited for compact designs. This package type enables ease of integration into modern printed circuit boards (PCBs).
MMBT5401-7-F is ideal for electronic projects requiring efficient and compact solutions. Its wide range of applications includes signal processing, switching, and amplification in consumer electronics, industrial equipment, and communication devices.
Equivalent
1. MMBT5401 (various manufacturers)
2. 2N5401 (through-hole package)
3. BC556 (for similar applications, though slightly different specifications)
4. KSA5401 (Fairchild/ON Semiconductor)
5. BC557 (for general-purpose applications)
Always check datasheets for exact specifications to ensure compatibility in your specific application.
Features
1. Polarity: PNP, meaning the transistor is 'on' when its base is low relative to the emitter.
2. Collector-Emitter Voltage (Vceo): 150V, indicating the maximum voltage the transistor can handle between collector and emitter.
3. Collector Current (Ic): 600mA, which is the maximum continuous current it can conduct from collector to emitter.
4. Power Dissipation: 350mW, representing the maximum power it can dissipate without damage.
5. Transition Frequency (fT): Approximately 100MHz, indicating the frequency at which the transistor can operate effectively.
6. Package: SOT-23, a small surface-mount package suitable for compact circuit designs.
7. Gain (hFE): Typical DC current gain ranges from 100 to 300, affecting amplification capability.
These features make it suitable for small-signal amplification and low-power switching applications in various electronic circuits.
Pinout
1. Emitter (E)
2. Base (B)
3. Collector (C)
The primary function of the MMBT5401-7-F is to amplify current, making it suitable for switching and amplification applications. It can handle a maximum collector current of 600 mA and a collector-emitter voltage of up to 150 V. The compact SOT-23 package makes it ideal for surface-mount technology (SMT) applications where space is a constraint.
Manufacturer
Application
1. Signal Amplification: Used in audio amplifiers and other signal processing circuits to amplify weak signals.
2. Switching: Suitable for low-power switching applications, such as driving small loads like LEDs or relays.
3. Voltage Regulation: Functions as a regulator or current limiter in power supply circuits.
4. Oscillator Circuits: Employed in oscillator designs due to its switching capabilities.
5. General-Purpose Circuits: Used in various consumer electronics for general amplification or switching tasks.
Its compact size makes it ideal for space-constrained applications.