MMBT589LT1G

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MMBT589LT1G

+BOM

TRANS PNP 30V 1A SOT23-3

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 1 A
Voltage-CollectorEmitterBreakdown(Max) 30 V
VceSaturation(Max)@IbIc 650mV @ 200mA, 2A
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 500mA, 2V
Power-Max 310 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

개요

Description

The MMBT589LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for amplification and switching applications. Manufactured by ON Semiconductor, this transistor is housed in a SOT-23 surface-mount package, making it suitable for compact electronic circuit designs. It features a collector-emitter voltage (V_CE) of 80V, a collector current (I_C) of up to 200mA, and a power dissipation of around 350mW. The MMBT589LT1G offers a high current gain (h_FE), typically ranging from 40 to 200, which makes it ideal for various low power applications, including signal amplification and switching. Its fast switching speed also makes it suitable for high-frequency applications. The transistor is widely used in consumer electronics, industrial controls, and automotive applications due to its reliability and performance. Additionally, it is RoHS compliant, ensuring it meets environmental and safety standards. Overall, the MMBT589LT1G is valued for its versatility, efficiency, and ease of integration into a wide range of electronic systems.

Equivalent

The MMBT589LT1G is a NPN bipolar junction transistor. Equivalent products include:
1. 2N3904
2. BC547
3. BC548
4. KSC1815
5. MMBT3904 (SOT-23 package)
These transistors have similar electrical characteristics, but always verify the specifications and package compatibility for your specific application.

Features

The MMBT589LT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications. Key features include:
1. VCEO (Collector-Emitter Voltage): Rated up to 80V, allowing for operation in moderately high-voltage applications.
2. Current Gain (hFE): Typically in the range of 100 to 300, providing good amplification capabilities.
3. Collector Current (IC): Maximum continuous collector current of 200mA, suitable for low to moderate power applications.
4. Package: Available in a SOT-23 package, which is compact and suitable for space-constrained designs.
5. Transition Frequency (fT): Typically around 100MHz, indicating its suitability for high-frequency applications.
6. Power Dissipation: Maximum power dissipation is approximately 225mW, supporting low-power operations effectively.
These features make the MMBT589LT1G a versatile choice for various electronic circuits requiring small signal amplification or switching.

Pinout

The MMBT589LT1G is a NPN bipolar junction transistor (BJT) commonly used in various electronic applications. It typically comes in a SOT-23 package, which is a small-outline transistor package. The pin count for the MMBT589LT1G in this package is 3 pins.
The functions of the pins are as follows:
1. Pin 1 (Base): This is the control terminal for the transistor. A small current or voltage applied to the base is used to control the larger current flowing between the collector and the emitter.
2. Pin 2 (Emitter): This is the terminal where the current leaves the transistor to complete the circuit.
3. Pin 3 (Collector): This is the terminal where the main current flows into the transistor.
In summary, the MMBT589LT1G transistor has 3 pins with the functions being base, emitter, and collector, and it is used for amplifying or switching electronic signals.

Manufacturer

The MMBT589LT1G is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components. ON Semiconductor, now known as onsemi, is a prominent global supplier of semiconductor solutions. They specialize in energy-efficient innovations, offering products that include power and signal management, logic, discrete, and custom devices for various applications such as automotive, industrial, cloud power, and the Internet of Things (IoT). As a leader in the semiconductor industry, onsemi focuses on developing sustainable and energy-efficient technologies to drive advancements in electronics and improve energy usage across different sectors.

Application

The MMBT589LT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in various applications. Its primary application areas include signal amplification, switching, and amplification in low-power circuits. It is suitable for use in consumer electronics, such as televisions and radios, for signal processing. Additionally, the MMBT589LT1G is utilized in automotive electronics, particularly in sensors and control systems, due to its reliability. The transistor can also be found in industrial applications for small signal amplification and switching tasks. Its compact SOT-23 package makes it ideal for space-constrained designs.

Package

The MMBT589LT1G is a surface-mount package type known as SOT-23. This package is commonly used for small-signal transistors, offering a compact form factor suitable for densely populated electronic circuits.

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