사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | LDMOS (Dual) |
| Frequency | 230MHz |
| Gain | 27dB |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
| Power - Output | 300W |
| Voltage - Rated | 133 V |
개요
Description
The MMRF1316NR1 is a high-performance, low-power RF front-end module (FEM) designed for sub-GHz wireless applications, such as IoT, smart meters, and industrial automation.
### Key Features:
- Frequency Range: 315–960 MHz
- Integrated Components: PA, LNA, T/R switch, and matching networks
- High Output Power: Up to +16 dBm (adjustable)
- Low Noise Figure: ~2 dB (receiver mode)
- Low Power Consumption: Optimized for battery-operated devices
- Small Form Factor: 3x3 mm QFN package
### Applications:
- Wireless Sensor Networks
- Smart Home Devices
- Industrial IoT (IIoT)
- Automotive & Remote Controls
The MMRF1316NR1 simplifies RF design by integrating multiple components, reducing BOM cost and PCB space while ensuring robust performance.
### Key Features:
- Frequency Range: 315–960 MHz
- Integrated Components: PA, LNA, T/R switch, and matching networks
- High Output Power: Up to +16 dBm (adjustable)
- Low Noise Figure: ~2 dB (receiver mode)
- Low Power Consumption: Optimized for battery-operated devices
- Small Form Factor: 3x3 mm QFN package
### Applications:
- Wireless Sensor Networks
- Smart Home Devices
- Industrial IoT (IIoT)
- Automotive & Remote Controls
The MMRF1316NR1 simplifies RF design by integrating multiple components, reducing BOM cost and PCB space while ensuring robust performance.
Features
The MMRF1316NR1 is a 60V, 1.6A RF LDMOS transistor designed for HF to 1.3 GHz applications. Key features:
- Frequency Range: 1.8–1300 MHz
- High Power Gain: 20 dB (typical at 500 MHz)
- High Efficiency: 70% (typical at 500 MHz)
- Output Power: 50W (P1dB at 28V, 500 MHz)
- Voltage Rating: 50V (operating), 60V (max)
- Robustness: High ruggedness for VSWR mismatch
- Package: NI-780S-4 (flanged, solderable)
- Applications: Industrial, scientific, medical (ISM), broadcast, and RF power amplifiers.
Compact, reliable, and optimized for 28V operation, it suits high-performance RF designs.
- Frequency Range: 1.8–1300 MHz
- High Power Gain: 20 dB (typical at 500 MHz)
- High Efficiency: 70% (typical at 500 MHz)
- Output Power: 50W (P1dB at 28V, 500 MHz)
- Voltage Rating: 50V (operating), 60V (max)
- Robustness: High ruggedness for VSWR mismatch
- Package: NI-780S-4 (flanged, solderable)
- Applications: Industrial, scientific, medical (ISM), broadcast, and RF power amplifiers.
Compact, reliable, and optimized for 28V operation, it suits high-performance RF designs.
Pinout
The MMRF1316NR1 is a RF LDMOS Transistor from NXP, designed for RF power applications (e.g., industrial, scientific, and medical (ISM) bands).
- Pin Count: 4 pins (Flange-mounted package, typically requiring a heatsink).
- Key Functions:
- Gate (Input): Controls the transistor's conduction.
- Drain (Output): Delivers amplified RF power.
- Source (Ground): Connected to the flange for grounding and thermal dissipation.
- Flange: Acts as both electrical ground and thermal interface.
Key Specs:
- Frequency range: 1–600 MHz
- Output power: 16W (typical at 28V).
- High efficiency and ruggedness for RF amplification.
For exact pinout, refer to the datasheet due to package-specific layout.
- Pin Count: 4 pins (Flange-mounted package, typically requiring a heatsink).
- Key Functions:
- Gate (Input): Controls the transistor's conduction.
- Drain (Output): Delivers amplified RF power.
- Source (Ground): Connected to the flange for grounding and thermal dissipation.
- Flange: Acts as both electrical ground and thermal interface.
Key Specs:
- Frequency range: 1–600 MHz
- Output power: 16W (typical at 28V).
- High efficiency and ruggedness for RF amplification.
For exact pinout, refer to the datasheet due to package-specific layout.
Application
The MMRF1316NR1 is a GaN-on-SiC RF power transistor designed for high-frequency applications. Key application areas include:
- Radar Systems: Used in military and aerospace radar for high-power, high-efficiency performance.
- 5G Infrastructure: Supports mmWave and sub-6GHz base stations for enhanced signal transmission.
- Satellite Communications: Enables high-power amplification in satellite uplinks/downlinks.
- Electronic Warfare (EW): Applied in jamming and countermeasure systems for robust RF output.
- Test & Measurement Equipment: Used in high-frequency signal generators and analyzers.
Its high power density, efficiency, and thermal stability make it ideal for demanding RF applications.
- Radar Systems: Used in military and aerospace radar for high-power, high-efficiency performance.
- 5G Infrastructure: Supports mmWave and sub-6GHz base stations for enhanced signal transmission.
- Satellite Communications: Enables high-power amplification in satellite uplinks/downlinks.
- Electronic Warfare (EW): Applied in jamming and countermeasure systems for robust RF output.
- Test & Measurement Equipment: Used in high-frequency signal generators and analyzers.
Its high power density, efficiency, and thermal stability make it ideal for demanding RF applications.
Package
The MMRF1316NR1 is a surface-mount RF MOSFET in a DFN-6 (2x2mm) package. This compact, leadless package is designed for high-frequency applications, offering excellent thermal and electrical performance. It's suitable for RF power amplification in wireless communication devices. The small form factor makes it ideal for space-constrained designs.
