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MMUN2114LT1G
+BOMTRANS PREBIAS PNP 50V SOT23-3
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제조업체온세미
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제조업체 부품 #MMUN2114LT1G
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데이터시트 MMUN2114LT1G DataSheet
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재고9352
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMUN2114 |
개요
Description
Key topics may include the United Nations system, international law, human rights, and security studies. By fostering a better understanding of the complexities of international interactions, students will develop skills in research, communication, and negotiation, preparing them for careers in diplomacy, international organizations, or related fields. This course is ideal for those interested in pursuing a deeper understanding of how nations collaborate and confront challenges on the world stage.
Equivalent
Features
1. Frequency Range: Operates in the 2.4 GHz ISM band, suitable for various wireless protocols.
2. Low Power Consumption: Consumes minimal power, making it ideal for battery-operated devices.
3. High Sensitivity: Provides excellent receiver sensitivity, enhancing communication range and reliability.
4. Integrated Functions: Combines RF transceiver capabilities with additional functionalities, reducing the need for external components.
5. Data Rate: Supports multiple data rates, accommodating various application needs.
6. Modulation Schemes: Compatible with multiple modulation schemes, providing flexibility for different communication standards.
7. Compact Package: Housed in a small form factor, facilitating easy integration into space-constrained designs.
This combination of features makes the MMUN2114LT1G suitable for applications like IoT devices, wireless sensors, and consumer electronics.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow between the drain and source.
2. Drain (D): This pin is the output side of the MOSFET where the load is connected. Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It acts as the entry point for the current when the MOSFET is turned on.
The MMUN2114LT1G is commonly used in low-voltage applications, including switching and amplification tasks in electronic circuits.