MT28EW01GABA1HJS-0SIT

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MT28EW01GABA1HJS-0SIT

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IC FLASH 1GBIT PARALLEL 56TSOP

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  • 제조업체 부품 #MT28EW01GABA1HJS-0SIT

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사양

속성 가치
PartStatus Active
BaseProductNumber MT28EW01
DigiKeyProgrammable Not Verified
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 1Gbit
MemoryOrganization 128M x 8, 64M x 16
MemoryInterface Parallel
WriteCycleTime-Word,Page 60ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
SupplierDevicePackage 56-TSOP
Packaging Tray
AccessTime 95 ns

개요

Description

The MT28EW01GABA1HJS-0SIT is a high-performance NAND Flash memory chip developed by Micron Technology. It is designed for a variety of applications, including embedded systems, consumer electronics, and industrial applications, where reliable and efficient data storage is required. This model offers a storage capacity of 1Gb (128MB) and features an asynchronous interface for easy integration with various microcontrollers and processors.
Key features of the MT28EW01GABA1HJS-0SIT include a robust data retention capability, high endurance with a large number of program/erase cycles, and efficient power consumption, making it suitable for battery-powered devices. The chip supports error correction code (ECC) algorithms to ensure data integrity, and its small form factor allows for compact system designs.
The MT28EW01GABA1HJS-0SIT operates over a wide temperature range, enhancing its suitability for industrial environments. Its advanced architecture provides fast data transfer rates, optimizing the performance of the end applications. This NAND Flash is a reliable choice for developers seeking dependable and efficient memory solutions.

Equivalent

The MT28EW01GABA1HJS-0SIT is a 1Gb NOR flash memory chip manufactured by Micron. Equivalent products to this chip might include those from other manufacturers like Cypress (Infineon), Winbond, Macronix, or Spansion, offering similar specifications in terms of capacity, interface, and performance. For exact equivalents, it's essential to compare the datasheets for parameters such as operating voltage, package type, and read/write speeds. Always consult with the manufacturers for the most accurate cross-reference information.

Features

The MT28EW01GABA1HJS-0SIT is a NAND Flash memory chip manufactured by Micron Technology. It features a storage capacity of 1 Gb (gigabit) and operates on a single-level cell (SLC) architecture, which is known for its high reliability and endurance. This chip supports a 3.3V power supply, making it suitable for various electronic applications, including industrial and automotive environments.
The device is designed with a parallel NAND interface, promoting faster data transfer rates. It also includes error correction code (ECC) support to enhance data integrity and reliability. This NAND Flash memory is capable of operating within a wide temperature range, typically from -40°C to 85°C, ensuring performance stability in harsh conditions.
The MT28EW01GABA1HJS-0SIT comes in a TSOP (Thin Small Outline Package) type I package, which is compact and suitable for space-constrained applications. Overall, this chip is well-suited for applications requiring robust data storage with reliable performance.

Pinout

The MT28EW01GABA1HJS-0SIT is a 1Gb NOR Flash memory device produced by Micron Technology. This specific chip typically comes in a 56-pin TSOP (Thin Small Outline Package) configuration. The primary function of this NOR Flash memory is to store firmware, boot code, and other crucial data that requires fast access and execution directly from the memory.
This type of memory is often used in embedded systems, automotive applications, and other devices where high-speed read capabilities are necessary. Key features include fast random access times, uniform sector architecture, and advanced security features like password protection and block locking.
The pinout for such devices generally includes pins for address lines, data lines, power supply (VCC), ground (VSS), write protection, output enable, chip enable, and write enable, among others. Each pin is dedicated to a specific function that supports the seamless operation of the memory chip in various applications.

Manufacturer

The MT28EW01GABA1HJS-0SIT is manufactured by Micron Technology, Inc. Micron is an American multinational corporation headquartered in Boise, Idaho. The company specializes in the production of memory and storage solutions, including dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. Micron serves a wide range of industries, including computing, networking, automotive, industrial, and mobile, providing both chip-level and system-level solutions. It is one of the leading companies in the semiconductor industry, known for its innovation and technological advancements in memory and storage products.

Application

The MT28EW01GABA1HJS-0SIT is a NOR Flash memory device often used in applications requiring reliable, non-volatile memory. Key application areas include:
1. Embedded Systems: Utilized for code storage in microcontrollers and processors in industrial automation and consumer electronics.
2. Automotive: Provides firmware storage for infotainment systems, advanced driver-assistance systems (ADAS), and engine control units (ECUs).
3. Networking: Used in routers and switches for configuration and firmware updates.
4. Medical Devices: Stores critical parameters and software in diagnostic equipment.
5. Aerospace and Defense: Offers reliable memory solutions for mission-critical applications where durability and data retention are crucial.

Package

The MT28EW01GABA1HJS-0SIT is a NAND Flash memory device packaged in a TSOP (Thin Small Outline Package). This package type is designed for applications requiring high-density storage with a compact form factor, suitable for various electronic devices.

Frequently Asked Questions


Q: What is the memory density and organization of this NOR Flash?
A: It is a 1Gbit (128M x 8 or 64M x 16) Non-Volatile NOR Flash memory, organized for flexible data access.


Q: What is the operating voltage range for this component?
A: It operates reliably with a voltage supply of 2.7V to 3.6V, suitable for standard 3V systems.


Q: What is the maximum access time and write speed?
A: It features a 95 ns access time and a word/page write cycle time of 60ns for fast read/write performance.


Q: What is the operating temperature range for industrial use?
A: It is rated for an industrial temperature range of -40°C to +85°C (TA), ensuring stability in harsh environments.


Q: What package type does this device come in?
A: It is supplied in a 56-TFSOP (18.40mm width) surface mount package, compatible with a 56-TSOP footprint.


Q: Is this component programmable via standard parallel interface?
A: Yes, it uses a parallel memory interface (x8/x16), supporting straightforward integration with MCUs and FPGAs.


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