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MT29F1G08ABAEAH4-AITX:E
+BOMIC FLASH 1GBIT PARALLEL 63VFBGA
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제조업체 부품 #MT29F1G08ABAEAH4-AITX:E
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재고5815
365 1일 품질 보증
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90-판매 후 1일 보증
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Base Product Number | MT29F1G08 |
개요
Description
Key specifications include fast read and write speeds, making it ideal for mobile devices, consumer electronics, and embedded systems. The device is designed for reliability and endurance, with features such as wear leveling and bad block management.
The suffix "AITX:E" indicates specific characteristics such as temperature range and packaging options, which can be crucial for different applications.
Overall, the MT29F1G08ABAEAH4-AITX:E is a versatile and efficient choice for applications requiring reliable non-volatile memory storage.
Equivalent
Features
1. Architecture: It is built on a 2-bit per cell (MLC) NAND architecture, which allows for higher storage density.
2. Interface: The device supports a compatible ONFI (Open NAND Flash Interface) 2.0 interface, facilitating easy integration with various host controllers.
3. Speed: It offers high performance with fast read and program speeds, making it suitable for applications requiring quick data access.
4. Endurance: Designed for reliability, it has a specified endurance rating of up to 3000 program/erase cycles.
5. Power Management: The device operates at low power, making it ideal for mobile and embedded applications.
6. Packaging: Typically available in a compact BGA (Ball Grid Array) package, suitable for space-constrained designs.
These features make the MT29F1G08ABAEAH4-AITX:E ideal for consumer electronics, automotive, and industrial applications.
Pinout
The key functions of the pins are as follows:
- Data pins (DQ0-DQ7): These 8 pins are used for data input/output.
- Command/Address pins (A0-A8, CE, RE, WE, R/B): These pins control the commands and address the memory.
- Chip Enable (CE): Activates the device.
- Read Enable (RE): Controls read operations.
- Write Enable (WE): Controls write operations.
- Ready/Busy (R/B): Indicates the status of the device (ready or busy).
- Vcc and Vss: Supply voltage and ground connections.
- Block Protect (BP): Protects specific blocks of memory from being erased.
- Reset (RESET): Resets the device.
This NAND flash is typically used in applications requiring storage, such as solid-state drives and mobile devices.