MT29F1G08ABAEAH4-AITX:E

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MT29F1G08ABAEAH4-AITX:E

+BOM

IC FLASH 1GBIT PARALLEL 63VFBGA

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Part Status Obsolete
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Base Product Number MT29F1G08

개요

Description

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory chip manufactured by Micron Technology. It features a 1Gb (gigabit) capacity and utilizes a 1-bit per cell (SLC) architecture, making it suitable for high-performance applications. This chip operates with a supply voltage of 2.7V to 3.6V and supports various interface protocols, including ONFI (Open NAND Flash Interface) and raw NAND.
Key specifications include fast read and write speeds, making it ideal for mobile devices, consumer electronics, and embedded systems. The device is designed for reliability and endurance, with features such as wear leveling and bad block management.
The suffix "AITX:E" indicates specific characteristics such as temperature range and packaging options, which can be crucial for different applications.
Overall, the MT29F1G08ABAEAH4-AITX:E is a versatile and efficient choice for applications requiring reliable non-volatile memory storage.

Equivalent

The MT29F1G08ABAEAH4-AITX:E chip is a 1Gb NAND Flash memory device. Equivalent products include the Samsung K9GAG08U0M, Hynix H27UCG8T2A, and Toshiba TH58NVG1S3HBA. Always verify specifications like density, interface, and packaging to ensure compatibility.

Features

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory device from Micron Technology, featuring a density of 1 Gb (Gigabit). Key features include:
1. Architecture: It is built on a 2-bit per cell (MLC) NAND architecture, which allows for higher storage density.
2. Interface: The device supports a compatible ONFI (Open NAND Flash Interface) 2.0 interface, facilitating easy integration with various host controllers.
3. Speed: It offers high performance with fast read and program speeds, making it suitable for applications requiring quick data access.
4. Endurance: Designed for reliability, it has a specified endurance rating of up to 3000 program/erase cycles.
5. Power Management: The device operates at low power, making it ideal for mobile and embedded applications.
6. Packaging: Typically available in a compact BGA (Ball Grid Array) package, suitable for space-constrained designs.
These features make the MT29F1G08ABAEAH4-AITX:E ideal for consumer electronics, automotive, and industrial applications.

Pinout

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory device from Micron Technology. It has a total of 48 pins.
The key functions of the pins are as follows:
- Data pins (DQ0-DQ7): These 8 pins are used for data input/output.
- Command/Address pins (A0-A8, CE, RE, WE, R/B): These pins control the commands and address the memory.
- Chip Enable (CE): Activates the device.
- Read Enable (RE): Controls read operations.
- Write Enable (WE): Controls write operations.
- Ready/Busy (R/B): Indicates the status of the device (ready or busy).
- Vcc and Vss: Supply voltage and ground connections.
- Block Protect (BP): Protects specific blocks of memory from being erased.
- Reset (RESET): Resets the device.
This NAND flash is typically used in applications requiring storage, such as solid-state drives and mobile devices.

Manufacturer

The manufacturer of the MT29F1G08ABAEAH4-AITX:E is Micron Technology, Inc. Micron is a leading global provider of innovative memory and storage solutions, including DRAM, NAND flash, and storage technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of sectors such as computing, networking, mobile, automotive, and industrial markets. The company focuses on delivering high-performance memory products that are integral to modern computing systems and applications. Micron is known for its commitment to research and development, driving advancements in memory technology to meet the increasing demands of data processing and storage in various electronic devices.

Application

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory chip primarily used in applications such as mobile devices, consumer electronics, tablets, and solid-state drives (SSDs). Its features make it suitable for storing firmware, operating systems, and user data in smartphones, digital cameras, and portable media players. Additionally, it is employed in automotive applications and Internet of Things (IoT) devices due to its reliability and performance in data-intensive tasks. Its small form factor and efficiency also make it ideal for embedded systems needing fast, non-volatile storage.

Package

The MT29F1G08ABAEAH4-AITX:E is packaged in a TSOP (Thin Small Outline Package) form factor, specifically a 48-ball package. This design helps facilitate high-density mounting on PCBs, making it suitable for various applications in consumer electronics and mobile devices.

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