사양
| 속성 | 가치 |
| Supplier | Micron Technology Inc. |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
개요
Description
MT29F1G08ABBDAHC-IT:D is Micron’s 1‑Gbit NAND Flash memory in the MT29F1G08 family. It is an x8 I/O, multi-level cell (MLC) NAND device with an industrial temperature option (IT), designed for embedded storage.
Key points:
- Interface: NAND flash interface (ONFI‑compatible) with page/block organization.
- Density: about 1 Gbit (roughly 128 MByte, depending on packaging and data layout).
- Architecture: page-based access with block erases; typically supports multiple planes for parallelism.
- Use: embedded storage, firmware boot/storage, data logging, compact SSDs in consumer/industrial devices.
- Notes: requires an external flash controller with ECC and wear leveling; follow Micron’s datasheet for exact electrical, timing, endurance, retention, page/block sizes, and operating conditions.
For precise specs and recommendations, consult the MT29F1G08ABBDAHC-IT:D datasheet and product brief.
Key points:
- Interface: NAND flash interface (ONFI‑compatible) with page/block organization.
- Density: about 1 Gbit (roughly 128 MByte, depending on packaging and data layout).
- Architecture: page-based access with block erases; typically supports multiple planes for parallelism.
- Use: embedded storage, firmware boot/storage, data logging, compact SSDs in consumer/industrial devices.
- Notes: requires an external flash controller with ECC and wear leveling; follow Micron’s datasheet for exact electrical, timing, endurance, retention, page/block sizes, and operating conditions.
For precise specs and recommendations, consult the MT29F1G08ABBDAHC-IT:D datasheet and product brief.
Equivalent
MT29F1G08ABBDAHC-IT:D is Micron’s 1-Gbit (128-MB) NAND flash, x8. Cross-references from other vendors vary by package/die. Common alternatives are 1Gbit/x8 NAND from Samsung, SK hynix, Toshiba, and Winbond. For exact equivalents, consult Micron’s Cross-Reference Tool or distributor catalogs.
Features
Here are the typical features of Micron MT29F1G08ABBDAHC-IT:D (industrial temp variant):
- Density: 1 Gbit NAND flash (≈128 MB)
- Cell type: MLC
- Interface: ONFI 2.1 compliant, x8 I/O
- Page/Spare: 2 KB page with 64 B spare (OOB)
- Block size: 128 KB (64 pages per block)
- Operations: multi-plane capable; cache read/write; automatic bad-block management
- ECC: built-in ECC generation/check (works with external BCH/ECC as needed)
- Speed (typical): sequential read/write in tens of MB/s range (varies by device/config); random access supported
- Endurance: typically around a few thousand P/E cycles
- Retention: data retention on the order of years (at moderate temperatures)
- Voltage/Temp: 3.3 V I/O supply; industrial temperature range (-40°C to 85°C)
- Packaging/grade: industrial variant suitable for embedded/consumer/industrial applications
Note: exact timing, ECC strength, and speeds depend on the device revision and system configuration. Refer to the official datasheet for precise numbers.
- Density: 1 Gbit NAND flash (≈128 MB)
- Cell type: MLC
- Interface: ONFI 2.1 compliant, x8 I/O
- Page/Spare: 2 KB page with 64 B spare (OOB)
- Block size: 128 KB (64 pages per block)
- Operations: multi-plane capable; cache read/write; automatic bad-block management
- ECC: built-in ECC generation/check (works with external BCH/ECC as needed)
- Speed (typical): sequential read/write in tens of MB/s range (varies by device/config); random access supported
- Endurance: typically around a few thousand P/E cycles
- Retention: data retention on the order of years (at moderate temperatures)
- Voltage/Temp: 3.3 V I/O supply; industrial temperature range (-40°C to 85°C)
- Packaging/grade: industrial variant suitable for embedded/consumer/industrial applications
Note: exact timing, ECC strength, and speeds depend on the device revision and system configuration. Refer to the official datasheet for precise numbers.
Pinout
Pin count: 48 pins.
Function: 1 Gbit NAND flash memory with an x8 data bus (ONFI-compatible) used for bulk storage. It provides DQ0–DQ7 data I/O, address inputs (A0–A12/A13), and control signals such as CLE, ALE, WE, RE, CE, WP, R/B, plus VCC, VCCQ, and GND.
Function: 1 Gbit NAND flash memory with an x8 data bus (ONFI-compatible) used for bulk storage. It provides DQ0–DQ7 data I/O, address inputs (A0–A12/A13), and control signals such as CLE, ALE, WE, RE, CE, WP, R/B, plus VCC, VCCQ, and GND.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- Company type: American multinational corporation that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, SSDs); one of the world’s largest memory semiconductor manufacturers.
- Company type: American multinational corporation that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, SSDs); one of the world’s largest memory semiconductor manufacturers.
Application
MT29F1G08ABBDAHC-IT:D is a 1 Gb NAND flash (industrial-temp grade). Typical applications:
- Non-volatile storage in embedded systems (firmware/boot code and data logging)
- Consumer electronics (digital cameras, camcorders, MP3 players, set-top boxes)
- Portable storage (USB drives, memory cards)
- Industrial/automotive equipment requiring rugged storage and wide temperature operation (telemetry, controllers, instrumentation)
Concise and within rugged, harsh-environment use cases.
- Non-volatile storage in embedded systems (firmware/boot code and data logging)
- Consumer electronics (digital cameras, camcorders, MP3 players, set-top boxes)
- Portable storage (USB drives, memory cards)
- Industrial/automotive equipment requiring rugged storage and wide temperature operation (telemetry, controllers, instrumentation)
Concise and within rugged, harsh-environment use cases.
Package
Fine-pitch FBGA (ball-grid array) package.
