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MT29F256G08CECEBJ4-37ITR:E
+BOMIC FLASH 256GBIT PAR 132VBGA
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제조업체 부품 #MT29F256G08CECEBJ4-37ITR:E
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (MLC) |
| Memory Size | 256Gbit |
| Memory Organization | 32G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 267 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 132-VBGA |
| Supplier Device Package | 132-VBGA (12x18) |
| Base Product Number | MT29F256G08 |
개요
Description
The MT29F256G08CECEBJ4-37ITR:E is a NAND flash memory chip produced by Micron Technology. It features a storage capacity of 256 gigabits (32 gigabytes) and is designed for high-performance applications, including mobile devices, consumer electronics, and industrial systems. This device utilizes a 1.8V supply voltage and employs a 37-nanosecond access time, making it suitable for fast data retrieval and storage operations.
The chip follows the ONFI (Open NAND Flash Interface) standard, ensuring compatibility and ease of integration with various controllers and systems. Its multi-level cell (MLC) architecture allows multiple bits to be stored per cell, enhancing data density while balancing cost and performance. The "E" in the part number signifies compliance with environmental standards, indicating it is lead-free and suitable for RoHS (Restriction of Hazardous Substances) compliance.
Overall, the MT29F256G08CECEBJ4-37ITR:E is a reliable and versatile solution for a range of embedded memory applications.
The chip follows the ONFI (Open NAND Flash Interface) standard, ensuring compatibility and ease of integration with various controllers and systems. Its multi-level cell (MLC) architecture allows multiple bits to be stored per cell, enhancing data density while balancing cost and performance. The "E" in the part number signifies compliance with environmental standards, indicating it is lead-free and suitable for RoHS (Restriction of Hazardous Substances) compliance.
Overall, the MT29F256G08CECEBJ4-37ITR:E is a reliable and versatile solution for a range of embedded memory applications.
Equivalent
The MT29F256G08CECEBJ4-37ITR:E chip is a 256Gb NAND Flash memory. Equivalent products include:
1. Samsung K9GAG08U0D
2. Micron MT29F256G08CBACA
3. Toshiba TH58TEG7D2LBA
4. Hynix H27UCG8T2B
Verify specifications like density, package type, and interface compatibility when considering alternatives.
1. Samsung K9GAG08U0D
2. Micron MT29F256G08CBACA
3. Toshiba TH58TEG7D2LBA
4. Hynix H27UCG8T2B
Verify specifications like density, package type, and interface compatibility when considering alternatives.
Features
The MT29F256G08CECEBJ4-37ITR:E is a NAND flash memory device from Micron Technology with the following key features:
1. Capacity: 256 Gigabits (32 Gigabytes) storage.
2. Interface: ONFI (Open NAND Flash Interface) compliant for compatibility and ease of integration.
3. NAND Type: 3D NAND technology, offering increased density and performance.
4. Page Size: 16KB (including spare area), enhancing data transfer efficiency.
5. Block Size: 128KB, supporting large data writes and erases.
6. Read Speed: Up to 400 MB/s, allowing for fast data access.
7. Write Speed: Up to 100 MB/s, suitable for efficient data storage.
8. Erase Cycle: Endurance of around 3,000 program/erase cycles.
9. Voltage: Operates at a supply voltage of 2.7V to 3.6V.
10. Temperature Range: Industrial grade (-40°C to +85°C), suitable for harsh environments.
These features make it ideal for applications such as industrial computing, automotive, and consumer electronics.
1. Capacity: 256 Gigabits (32 Gigabytes) storage.
2. Interface: ONFI (Open NAND Flash Interface) compliant for compatibility and ease of integration.
3. NAND Type: 3D NAND technology, offering increased density and performance.
4. Page Size: 16KB (including spare area), enhancing data transfer efficiency.
5. Block Size: 128KB, supporting large data writes and erases.
6. Read Speed: Up to 400 MB/s, allowing for fast data access.
7. Write Speed: Up to 100 MB/s, suitable for efficient data storage.
8. Erase Cycle: Endurance of around 3,000 program/erase cycles.
9. Voltage: Operates at a supply voltage of 2.7V to 3.6V.
10. Temperature Range: Industrial grade (-40°C to +85°C), suitable for harsh environments.
These features make it ideal for applications such as industrial computing, automotive, and consumer electronics.
Pinout
The MT29F256G08CECEBJ4-37ITR:E is a NAND Flash memory device from Micron Technology with a total pin count of 63. It features a NAND Flash interface used for data storage in various applications.
Key functions of the pins include:
- Data pins (DQ0-DQ7): For data input/output.
- Control pins (WE, RE): For write enable and read enable operations.
- Address pins (A0-A24): For addressing the memory locations.
- Chip Enable (CE): To activate the chip.
- Write Protect (WP): To prevent write operations.
- Ready/Busy (R/B): Indicates the status of the device (ready or busy).
- Ground (GND) and Power (VCC, VCCQ): For power supply.
This device is typically used in high-capacity storage applications where speed and reliability are critical.
Key functions of the pins include:
- Data pins (DQ0-DQ7): For data input/output.
- Control pins (WE, RE): For write enable and read enable operations.
- Address pins (A0-A24): For addressing the memory locations.
- Chip Enable (CE): To activate the chip.
- Write Protect (WP): To prevent write operations.
- Ready/Busy (R/B): Indicates the status of the device (ready or busy).
- Ground (GND) and Power (VCC, VCCQ): For power supply.
This device is typically used in high-capacity storage applications where speed and reliability are critical.
Manufacturer
The manufacturer of the MT29F256G08CECEBJ4-37ITR:E is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, offering a variety of products including DRAM, NAND flash memory, and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of industries, including computing, mobile, automotive, and data center markets. The MT29F256G08CECEBJ4-37ITR:E is a NAND flash memory chip, commonly used in various applications such as solid-state drives (SSDs), mobile devices, and embedded systems. Micron is known for its focus on innovation, quality, and technology advancements in the semiconductor industry.
Application
The MT29F256G08CECEBJ4-37ITR:E is a 256 Gb NAND Flash memory device commonly used in various applications including:
1. Consumer Electronics: Smartphones, tablets, and digital cameras.
2. Industrial: Data storage in automotive, medical devices, and industrial machinery.
3. Embedded Systems: Firmware storage for IoT devices and smart appliances.
4. Data Centers: High-density storage solutions for servers and cloud computing.
5. Networking: Storage for routers and switches.
Its features, including high performance and endurance, make it suitable for applications requiring reliable data retention and fast read/write speeds.
1. Consumer Electronics: Smartphones, tablets, and digital cameras.
2. Industrial: Data storage in automotive, medical devices, and industrial machinery.
3. Embedded Systems: Firmware storage for IoT devices and smart appliances.
4. Data Centers: High-density storage solutions for servers and cloud computing.
5. Networking: Storage for routers and switches.
Its features, including high performance and endurance, make it suitable for applications requiring reliable data retention and fast read/write speeds.
Package
The MT29F256G08CECEBJ4-37ITR:E is a NAND Flash memory device packaged in a 48-ball FBGA (Fine-Pitch Ball Grid Array) format. This package type is designed for compact applications, offering efficient space utilization and thermal performance.
